IRLR3915
IRLU3915
Features
●
●
●
●
●
D-Pak
IRLR3915
I-Pak
IRLU3915
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
thi Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
V
DSS
= 55V
G
S
R
DS(on)
= 14mΩ
I
D
= 30A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
± 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient–––
Typ.
–––
–––
110
Max.
1.3
50
Units
°C/W
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IRLR/U3915
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
–––
1.0
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
12
14
–––
–––
–––
–––
–––
–––
61
9.0
17
7.4
51
83
100
4.5
7.5
1870
390
74
2380
290
540
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
14
V
GS
= 10V, I
D
= 30A
mΩ
17
V
GS
= 5.0V, I
D
= 26A
3.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 30A
20
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
92
I
D
= 30A
14
nC
V
DS
= 44V
25
V
GS
= 10V
–––
V
DD
= 28V
ns
–––
I
D
= 30A
–––
R
G
= 8.5Ω
–––
V
GS
= 10V
D
Between lead,
–––
nH
6mm (0.25in.)
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– –––
61
showing the
A
G
integral reverse
––– ––– 240
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
––– 62
93
ns
T
J
= 25°C, I
F
= 30A, V
DD
= 25xjkl V
––– 110 170
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
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IRLR/U3915
10000
TOP
1000
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
TOP
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
100
BOTTOM
10
1
0.1
0.01
0.001
0.1
1
10
100
1000
10
2.0V
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
70
G fs , Forward Transconductance (S)
ID, Drain-to-Source Current
(Α
)
T J = 25°C
60
50
40
30
20
10
0
TJ = 175°C
T J = 25°C
100.00
T J = 175°C
10.00
1.00
VDS = 25V
20µs PULSE WIDTH
0.10
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
0
10
20
30
40
50
60
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
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201408016
IRLR/U3915
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C SHORTED
gs
ds
Crss = C
gd
Coss = Cds + Cgd
V
GS
, Gate-to-Source Voltage (V)
8
12
I
D
=
30A
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
10
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
100
4
Crss
2
10
1
10
100
0
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T
J
= 175
10
°
C
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
T
J
= 25
1
°
C
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
10msec
100
1000
V
SD
,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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Fig 8.
Maximum Safe Operating Area
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IRLR/U3915
70
2.5
LIMITED BY PACKAGE
60
2.0
I
D
= 61A
50
R
DS(on)
, Drain-to-Source On Resistance
I
D
, Drain Current (A)
(Normalized)
40
1.5
30
1.0
20
0.5
10
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
t
2
P
DM
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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