IRLR8743PBF
IRLU8743PBF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8743PbF
I-Pak
IRLU8743PbF
V
DSS
30V
R
DS(on)
max
3.1m
:
Max.
30
± 20
160
640
135
68
0.90
-55 to + 175
300 (1.6mm from case)
Qg
39nC
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
113
f
A
W
W/°C
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.11
50
110
Units
°C/W
gÃ
–––
–––
–––
2014-5-25
1
www.kersemi.com
IRLR8743PBF
IRLU8743PBF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
2.4
3.0
1.9
-6.4
–––
–––
–––
–––
–––
39
10
3.9
13
12
17
21
0.85
19
35
21
17
4880
950
470
–––
–––
3.1
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
mΩ
3.9
V
GS
= 4.5V, I
D
= 20A
2.35
V V
DS
= V
GS
, I
D
= 100µA
e
e
–––
1.0
150
100
-100
–––
59
–––
–––
–––
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 20A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 20A
See Fig. 16
nC
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
V
DS
= 16V, V
GS
= 0V
e
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
250
20
13.5
Units
mJ
A
mJ
pF
Avalanche Characteristics
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
18
32
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
160
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
f
A
Ã
640
1.0
27
48
V
ns
nC
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-5-25
2
www.kersemi.com
IRLR8743PBF
IRLU8743PBF
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 25A
VGS = 10V
1.5
ID, Drain-to-Source Current (A)
100
10
T J = 175°C
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1.0
0.1
0
2
4
6
8
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
2014-5-25
3
www.kersemi.com
IRLR8743PBF
IRLU8743PBF
100000
5.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
ID= 20A
4.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
3.0
2.0
1000
Coss
Crss
1.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
5
10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100µsec
100
1msec
10msec
10
T J = 25°C
10
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-5-25
4
www.kersemi.com
IRLR8743PBF
IRLU8743PBF
180
VGS(th) , Gate Threshold Voltage (V)
2.5
160
140
Limited By Package
2.0
ID, Drain Current (A)
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 100µA
1.0
0.5
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.02879
τ
τi
(sec)
0.000017
0.000143
0.001411
0.25773
0.48255
0.01
Ci=
τi/Ri
Ci i/Ri
0.34135 0.010617
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-5-25
5
www.kersemi.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
