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SIT3521AE-2C225-1M1.000000: 产品描述LVDS Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN; 产品类别无源元件振荡器; 文件大小3MB，共47页; 制造商SiTime; 标准

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SIT3521AE-2C225-1M1.000000概述

LVDS Output Clock Oscillator, 1MHz Nom, QFN, 10 PIN

SIT3521AE-2C225-1M1.000000规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SiTime
包装说明	LCC10,.12X.2,50/40
Reach Compliance Code	unknown
其他特性	COMPLEMENTARY OUTPUT
最长下降时间	0.47 ns
频率调整-机械	NO
频率稳定性	25%
JESD-609代码	e4
安装特点	SURFACE MOUNT
端子数量	10
标称工作频率	1 MHz
最高工作温度	105 °C
最低工作温度	-40 °C
振荡器类型	LVDS
输出负载	100 OHM, 2 pF
封装等效代码	LCC10,.12X.2,50/40
物理尺寸	5.0mm x 3.2mm x 0.9mm
最长上升时间	0.47 ns
最大压摆率	80 mA
最大供电电压	2.75 V
最小供电电压	2.25 V
标称供电电压	2.5 V
表面贴装	YES
最大对称度	55/45 %
端子面层	Nickel/Palladium/Gold (Ni/Pd/Au)

SIT3521AE-2C225-1M1.000000文档预览

SiT3521

Description

PRELIMINARY

1 to 340 MHz Elite Platform™ I

C/SPI Programmable Oscillator

Features



The

SiT3521

is an ultra-low jitter, user programmable

oscillator which offers the system designer great flexibility

and functionality.

The device supports two in-system programming options

after powering up at a default, factory programmed startup

frequency:



Any-frequency mode where the clock output can be re-

programmed to any frequency between 1 MHz and

340 MHz in 1 Hz steps

Digitally controlled oscillator (DCO) mode where the

clock output can be steered or pulled by up to

±3200

ppm with 5 to 94 ppt (parts per trillion) resolution.



The device’s default start-up frequency is specified in the

ordering code. User programming of the device is achieved

via I C or SPI. Up to 16 I C addresses can be specified by

the user either as a factory programmable option or via

hardware pins, enabling the device to share the I C with

other I C devices.

The SiT3521 utilizes SiTime’s unique DualMEMS™

temperature sensing and TurboCompensation™ technology

to deliver exceptional dynamic performance:



Programmable frequencies (factory or via I C/SPI)

from 1 MHz to 340 MHz

Digital frequency pulling (DCO) via I C/SPI



Output frequency pulling with perfect pull linearity



13 programmable pull range options to

±3200

ppm



Frequency pull resolution as low as 5 ppt (0.005 ppb)

0.21 ps typical integrated phase jitter (12 kHz to 20 MHz)

Integrated LDO for on-chip power supply noise filtering

0.02 ps/mV PSNR

-40°C to 105°C operating temperature

LVPECL, LVDS, or HCSL outputs



Programmable LVPECL, LVDS Swing



LVDS Common Mode Voltage Control

RoHS and REACH compliant, Pb-free, Halogen-free

and Antimony-free

Applications



Resistant to airflow and thermal shock

Resistant to shock and vibration

Superior power supply noise rejection

Combined with wide frequency range and user

programmability, this device is ideal for telecom, networking

and industrial applications that require a variety of

frequencies and operate in noisy environment.

Ethernet: 1/10/40/100/400 Gbps

G.fast and xDSL

Optical Transport: SONET/SDH, OTN

Clock and data recovery

Processor over-clocking

Low jitter clock generation

Server, storage, datacenter

Test and measurement

Broadcasting

Block Diagram

Package Pinout

(10-Lead QFN, 5.0 x 3.2 mm)

A/ K

SD C L

OE / NC

GND

VDD

OUT-

OUT+

A1 A0

/N /N

C/ C/

M SS

Figure 1. SiT3521 Block Diagram

Figure 2. Pin Assignments (Top view)

(Refer to

Table 14

for Pin Descriptions)

Rev 0.991

April 25, 2020

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Ordering Information

PRELIMINARY

SiT3521 AC -1C133 1 GG156.250000T

Part Family

“SiT3521”

12 mm Tape & Reel, 3ku reel

12 mm Tape & Reel, 1ku reel

[2]

Revision Letter

“A” is the revision of Silicon

Frequency

1.000000 to 340. 000000 MHz

Temperature Range

“C” : Extended Commercial, -20 to 70°C

“ I ” : Industrial, -40 to 85°C

“E” : Extended Industrial, -40 to 105°C

[1]

Signaling Type

“1”: LVPECL

“2”: LVDS

“4”: HCSL

DCXO Pull Range

“M”

“B”

“C”

“E”

“F”

“G”

“H”

“X”

“L”

“Y”

“S”

“Z”

“U”

± 25 ppm

± 50 ppm

± 80 ppm

±100 ppm

±125 ppm

±150 ppm

±200 ppm

±400 ppm

± 600 ppm

±800 ppm

±1200 ppm

±1600 ppm

±3200 ppm

Package Size

“C”: 5.0 x 3.2 mm

Frequency Stability/Grade

“F”: ±10 ppm

“1”: ±20 ppm

“2”: ±25 ppm

“3”: ±50 ppm

Serial IF mode

“S”

: SPI mode

[1]

“0-G”

: I

C mode (See below)

I C Factory Programmable Addresses

“0-F” : I C Address factory programmed

Sets Bits 3: 0 of Device I

C address to

the Hex value of the ordering code .

When the I C address is factory

programmed using these codes ,

pin A0, A1 are NC

“G”: I

C address controlled by A0, A1 pins

A1:A0

C Address

1100000

1100010

1101000

1101010 (default)

Voltage Supply

“25” :

“28” :

“30” :

“33” :

2.5V

2.8V

3.0V

3.3V

±10%

OE Pin Control

“-”: OE under software Control.

Pin 1 and 2 are both NC.

“1”: Pin 1 OE, Pin 2 NC

“2”: Pin 1 NC, Pin 2 OE

Notes:

1. -40 to 105°C option available only for I

C operation.

2. Bulk is available for sampling only.

Rev 0.991

Page 2 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

TABLE OF CONTENTS

PRELIMINARY

Description ................................................................................................................................................................................... 1

Features....................................................................................................................................................................................... 1

Applications ................................................................................................................................................................................. 1

Block Diagram ............................................................................................................................................................................. 1

Ordering Information .................................................................................................................................................................... 2

1 Electrical Characteristics ......................................................................................................................................................... 4

2 Device Configurations and Pin-outs ........................................................................................................................................ 9

3 Waveform Diagrams ............................................................................................................................................................. 11

4 Termination Diagrams ........................................................................................................................................................... 13

4.1. LVPECL .................................................................................................................................................................... 13

4.2. LVDS ........................................................................................................................................................................ 15

4.3. HCSL ........................................................................................................................................................................ 16

5 Test Circuit Diagrams ........................................................................................................................................................... 17

6 Architecture Overview ........................................................................................................................................................... 19

7 Functional Overview ............................................................................................................................................................. 19

7.1. User Programming Interface ..................................................................................................................................... 19

7.2. Start-up output frequency and signaling types .......................................................................................................... 19

7.3. In-system programmable options.............................................................................................................................. 19

8 In-system Programmable Functional Description.................................................................................................................. 20

8.1. Any-frequency function ............................................................................................................................................. 20

8.2. DCO Functional Description ..................................................................................................................................... 24

8.3. Pull Range, Absolute Pull Range .............................................................................................................................. 26

8.4. Software OE Functional Description ......................................................................................................................... 28

9 I C/SPI Control Registers...................................................................................................................................................... 29

9.1. Register Address: 0x00. DCO Frequency Control Least Significant Word (LSW) .................................................... 29

9.2. Register Address: 0x01. OE Control, DCO Frequency Control Most Significant Word (MSW) ................................. 30

9.3. Register Address: 0x02. DCO PULL RANGE CONTROL ........................................................................................ 31

9.4. Register Address: 0x03. Flac-N PLL Integer Value and Flac-N PLL Fraction MSW ................................................. 32

9.5. Register Address: 0x04. Flac-N PLL Fraction LSW .................................................................................................. 32

9.6. Register Address: 0x05. PostDiv, Driver Control ...................................................................................................... 33

9.7. Register Address: 0x06. mDriver, Driver Control ...................................................................................................... 34

10 I C Operation ........................................................................................................................................................................ 35

10.1. I C protocol ............................................................................................................................................................... 35

10.2. I C Timing Specification ............................................................................................................................................ 37

10.3. I C Device Address Modes ....................................................................................................................................... 38

11 SPI Operation ....................................................................................................................................................................... 39

Schematic Examples ................................................................................................................................................................. 42

Dimensions and Patterns ........................................................................................................................................................... 45

Additional Information ................................................................................................................................................................ 46

Revision History ......................................................................................................................................................................... 47

Rev 0.991

Page 3 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

1 Electrical Characteristics

PRELIMINARY

All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with

standard output terminations shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL

Parameter

Output Frequency Range

Frequency Stability

Symbol

F_stab

Min.

-10

-20

-25

-50

First Year Aging

Operating Temperature Range

F_1y

T_use

–

-20

-40

Supply Voltage

Vdd

2.97

2.7

2.52

2.25

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

Duty Cycle

Start-up Time

Output Enable/Disable Time –

Hardware control via OE pin

Output Enable/Disable Time –

Software control via I

C/SPI

VIH

VIL

Z_in

T_start

T_oe_hw

70%

–

Typ.

–

±1

–

3.3

3.0

2.8

2.5

–

100

–

Max.

340

+10

+20

+25

+50

–

+70

+85

+105

Supply Voltage

3.63

3.3

3.08

2.75

–

30%

–

3.0

3.8

Vdd

kΩ

µs

Measured from the time Vdd reaches its rated minimum value

Measured from the time OE pin reaches rated VIH and VIL to

the time clock pins reach 90% of swing and high-Z.

See

Figure 9

and

Figure 10

Measured from the time the last byte of command is

transmitted via I

C/SPI (reg1) to the time clock pins reach 90%

of swing and high-Z. See

Figure 30

and

Figure 31

OE pin

OE pin, logic high or logic low

Unit

MHz

ppm

°C

1 -year aging at 25°C

Extended Commercial

Industrial

Extended Industrial. Available only for I C operation, not SPI.

Condition

Factory or user programmable, accurate to 6 decimal places

Inclusive of initial tolerance, operating temperature, rated

power supply voltage and load variations.

Frequency Range

Frequency Stability

Temperature Range

Input Characteristics – OE Pin

Output Characteristics

Startup and Output Enable/Disable Timing

T_oe_sw

–

6.5

µs

Rev 0.991

Page 4 of 47

www.sitime.com

SiT3521

1 to 340 MHz Elite™ I

C/SPI Programmable Oscillator

Table 2. Electrical Characteristics – LVPECL Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

PRELIMINARY

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Maximum Output Current

Idd

I_OE

I_leak

I_driver

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Maximum average current drawn from OUT+ or OUT-

Output Characteristics

Output High Voltage

Output Low Voltage

Output Differential Voltage Swing

Rise/Fall Time

VOH

VOL

V_Swing

Tr, Tf

Vdd - 1.1V

Vdd - 1.9V

1.2

–

1.6

225

Vdd - 0.7V

Vdd - 1.5V

2.0

290

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[3]

Note:

3. Measured according to JESD65B.

T_jitt

–

0.225

0.1

0.225

0.11

0.340

0.14

0.340

0.15

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

See

Figure 5

See

Figure 5

See

Figure 6

20% to 80%, see

Figure 6

Table 3. Electrical Characteristics – LVDS Specific

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Current Consumption

OE Disable Supply Current

Output Disable Leakage Current

Idd

I_OE

I_leak

–

0.15

–

A

Excluding Load Termination Current, Vdd = 3.3V or 2.5V

OE = Low

Output Characteristics

Differential Output Voltage

Delta VOD

Offset Voltage

Delta VOS

Rise/Fall Time

VOD

ΔVOD

VOS

ΔVOS

Tr, Tf

250

–

1.125

–

400

455

1.375

470

Jitter

RMS Phase Jitter (random) –

DCO Mode Only

T_phj

–

RMS Phase Jitter (random) –

Any-frequency Mode Only

T_phj

–

RMS Period Jitter

[4]

Note:

4. Measured according to JESD65B.

T_jitt

–

0.21

0.1

0.21

0.1

0.275

0.12

0.367

0.12

1.6

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,

all Vdd levels

f = 156.25, IEEE802.3-2005 10 GbE jitter mask integration

bandwidth = 1.875 MHz to 20 MHz, all Vdd levels

f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V

f = 156.25MHz See

Figure 7

See

Figure 7

See

Figure 7

See

Figure 7

Measured with 2 pF capacitive loading to GND, 20% to 80%,

see

Figure 8

Rev 0.991

Page 5 of 47

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金卤灯电子镇流器Buck电路的优化设计

　　 0 引言　　金卤灯(MHL)作为一种绿色照明光源在室内外照明领域中逐渐得到了广泛的应用，然而，在使用这种绿色照明光源时，与之配套的金卤灯电子镇流器则是实现绿色金卤灯照明的关键所在。Buck电路是金卤灯电子镇流器的重要组成部分，主要用于在金卤灯稳态工作时的恒功率供电。因此，Buck电路的设计对整个电子镇流器的性能有非常重要的影响。　　 1 金卤灯电子镇流器　　金卤灯是HID灯中性...[详细]
下一代手机中的电源管理分割方案(附图解）

　　第三代(3G)手机可提供具有更多功能的各种特性。当消费者享用这些通信设备最新及更好功能的时候，他们还继续要求单个电池的工作时间更长、手机的外形尺寸更小。尽管IC集成可帮助解决尺寸问题，但同时也会增加设计复杂度并限制设计灵活性。当今的手机设计工程师必须考虑多种因素来有效地优化电池使用，以延长电池工作时间。因此，必须结合使用高度集成化的电源管理单元和高性能分立器件来进行电池管理、功率转换以及系统...[详细]
EDGE手机基带处理设计几种实现方法评估

　　在无线市场上，EDGE协议已迅速为业者所接受，EDGE手机设计中支持多时隙传输、多种调制解调器/语音编译码器是基带处理面临的最大挑战。如何以高性能价格比方式实现EDGE的基带部分并占据最小的PCB面积最小？目前有几种实现方法，本文将对这些方法的技术优缺点和风险进行评估，中国手机设计工程师和手机芯片设计工程师应予以关注。　　EDGE通常称为2.5G的规范，并且被人们看作向3G系统过渡的标准...[详细]
英特尔以技术之名让产品蕴涵百分百技术

15%的收入用于研发，100%的技术转化为产品。尽管利润下降，股票示弱，英特尔却不回头，因为历史已经验证，英特尔惟有技术立命。　　近年，尽管英特尔的销售额在不断上升，但销售收入却下降了20%，利润只有鼎盛时期的三分之一，股价有一定程度的降幅。但是，这个始终高举技术旗号的IT大佬，每年花在研发上的投入仍然达到40亿美元以上，占收入的15%，总共花了100多亿美元扩建了四家先进的工...[详细]
ARM与英特尔谁能领跑手机芯片市场

ARM与英特尔，能领跑手机芯片市场？毫无疑问，未来高端智能手持终端平台将主要是嵌入式X86架构与ARM架构的竞争，前者英特尔是主角，后者ARM为主角。这场比赛不仅包括两家公司芯片处理速度上的比赛，也包括两家公司在移动互联网生态环境营造速度上的比赛。两家公司真正的交锋将从2008年二季度开始。虽然他们之间的口角战从去年开始就已打得热火朝天，但是在英特尔的Menlow平台(基于Silv...[详细]

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