Preliminary
Datasheet
RJH60F6DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
R07DS0236EJ0200
(Previous: REJ03G1940-0100)
Rev.2.00
Nov 30, 2010
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 45 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 74 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-c
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Page 1 of 7
RJH60F6DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
f
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
4
Typ
1.35
3800
150
65
58
80
131
74
1.6
1.8
140
Max
100
±1
8
1.75
2.1
Unit
A
A
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 45 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
,
Inductive load
I
F
= 20 A
I
F
= 40 A
Note3
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/s
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Page 2 of 7
RJH60F6DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
180
Typical Output Characteristics
Ta = 25
°
C
160 Pulse Test
140
120
100
80
60
40
20
0
V
GE
= 8 V
0
1
2
3
4
5
10 V
11 V
15 V
9.6 V
9.8 V
9.4 V
9.2 V
9V
8.8 V
8.6 V
8.4 V
8.2 V
Collector Current I
C
(A)
100
PW
10
μ
s
10
1
Tc = 25°C
Single pulse
10
100
1000
0.1
1
Collector Current I
C
(A)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
180
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
μ
00
=1
s
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25
°
C
Pulse Test
Collector Current I
C
(A)
160
140
120
100
80
60
40
20
0
0
2.6
2.2
I
C
= 30 A
45 A
85 A
Tc = 75°C
25°C
–25°C
1.8
1.4
1.0
6
8
10
12
14
16
18
20
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.0
V
GE
= 15 V
Pulse Test
I
C
= 85 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
1.8
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
7
I
C
= 10 mA
6
1.6
45 A
1.4
30 A
1.2
15 A
5
V
CE
= 10 V
Pulse Test
4
−25
0
25
1 mA
1.0
−25
0
25
50
75
100 125 150
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Page 3 of 7
RJH60F6DPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
Cies
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
100
Coes
40
20
0
0
1
2
3
4
5
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
Cres
1
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
I
C
= 25 A
Ta = 25
°
C
V
CC
= 600 V
300 V
600
V
CE
12
400
8
200
V
CC
= 600 V
300 V
0
0
40
80
120
4
0
160
Gate Charge Qg (nc)
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Gate to Emitter Voltage V
GE
(V)
800
V
GE
16
Page 4 of 7
RJH60F6DPK
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
1000
Eoff
100
Eon
10
1
10
100 200
10
1
10
100 200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
Switching Times t (ns)
200
160
120
80
40
0
0
Swithing Energy Losses E (μJ)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
td(off)
1200
Eoff
800
Eon
400
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
0
25
50
75
100
125
150
tr
tf
td(on)
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Page 5 of 7
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