Preliminary
Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
•
•
•
•
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 35 A, V
GE
= 15V, Tj = 25°C)
•
Gate to emitter voltage rating
±30
V
•
Pb-free lead plating
R07DS0394EJ0100
Rev.1.00
May 16, 2011
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
P
C
θj-c
Tj
Tstg
Ratings
1100
±30
60
35
100
25
250
0.5
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 1 of 6
RJH1BF7RDPQ-80
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
C-E diode forward voltage
Notes: 2. Pulse test
V
F
Min
⎯
⎯
3.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
5.0
1.6
1.95
3260
67
54
58
78
144
208
3.0
Max
100
±1
7.0
2.1
2.35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3.9
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
V
CE
= 1100 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 35 A, V
GE
= 15 V
Note2
I
C
= 60 A, V
GE
= 15 V
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 35 A
V
CE
= 600 V, V
GE
= 15 V
Rg = 5
Ω
Note2
Resistive Load
I
F
= 10 A
Note2
Note2
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 2 of 6
RJH1BF7RDPQ-80
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
8.8 V
9V
10 V
60
15 V, 20 V
40
7.8 V
7.6 V
7.4 V
20
7.2 V
8.6 V
8.4 V
8.2 V
8V
Collector Current I
C
(A)
Collector Current I
C
(A)
100
PW = 10
μs
80
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
0
10
100
1000
10000
0
V
GE
= 7 V
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
60
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.6
Ta = 25
°
C
Pulse Test
3.2
Collector Current I
C
(A)
50
40
V
CE
= 10 V
Pulse Test
Tc = 75°C
30
20
10
0
2
4
6
8
10
12
25°C
–25°C
2.8
I
C
= 100 A
2.4
60 A
2.0
35 A
1.6
6
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temperature (Typical)
10
V
CE
= 10 V
Pulse Test
8
I
C
= 10 mA
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
−25
V
GE
= 15 V
Pulse Test
I
C
= 100 A
60 A
35 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4
1 mA
2
0
25
50
75
100 125 150
0
-25
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temperature
Tj (°C)
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 3 of 6
RJH1BF7RDPQ-80
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
Cies
Forward Current vs.Forward Voltage (Typical)
30
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
Forward Current I
F
(A)
Capacitance C (pF)
25
20
15
10
5
0
0
1000
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
Cres
1
2
4
6
8
C-E Diode Forward Voltage V
ECF
(V)
Colloctor to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
GE
V
CE
V
CC
= 600 V
300 V
16
Switching Characteristics (Typical) (1)
1000
tf
Switching Time t (ns)
600
12
td(off)
100
td(on)
400
8
10
tr
V
CC
= 600 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C, Resistive load
1
10
100
200
V
CC
= 600 V
300 V
4
I
C
= 35 A
Ta = 25
°
C
160
0
200
0
1
0
40
80
120
Gate Charge Qg (nC)
Colloctor Current I
C
(A)
Switching Characteristics (Typical) (2)
10000
V
CC
= 600 V, V
GE
= 15 V
I
C
= 35 A, Ta = 25
°
C, Resistive load
Switching Characteristics (Typical) (3)
1000
tf
td(off)
100
tr
td(on)
Switching Time t (ns)
1000
td(off)
tf
100
tr
td(on)
Switching Time t (ns)
10
1
10
100
10
0
V
CC
= 600 V, V
GE
= 15 V
I
C
= 35 A, Rg = 5
Ω,
Resistive load
25
50
75
100 125 150 175
Gate Resistance Rg (Ω)
Case Temperature Tc (
°
C)
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 4 of 6
RJH1BF7RDPQ-80
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
Preliminary
0.3
0.2
0.1
0.1
0.05
0.02
0.03
1 shot pulse
0.01
θj −
c(t) =
γs
(t) •
θj −
c
θj −
c = 0.5 °C/W, Tc = 25 °C
P
DM
PW
T
100
μ
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
Pulse Width
PW (s)
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Vin
10%
Waveform
90%
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 5 of 6
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