SMG3401
-4.2A, -30V,R
DS(ON)
50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
A suffix of "-C" specifies halogen & lead-free
A
Description
The SMG3401
uses advanced trench technology
to provide excellent on-resistance extremely
efficient and cost-effectiveness device.
The SMG3401 is
universally used for all
commercial-industrial applications.
S
2
L
SC-59
Dim
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
3
Top View
B
1
A
B
C
D
G
C
J
K
Drain
D
G
H
J
K
L
S
Features
*
Small Package Outline
*
Lower Gate Charge
*
RoHS Compliant
H
Gate
Source
D
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
-30
±12
-4.2
-3.5
30
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/ C
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Ratings
90
Unit
o
Rthj-a
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG3401
-4.2A, -30V,R
DS(ON)
50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25
o
C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=55
o
C
)
o
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
Min.
-30
-0.7
_
_
_
_
Typ.
_
_
_
_
_
_
_
_
Max.
_
Unit
V
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
12
V
V
DS
=-
24
V,V
GS
=0
V
DS
=-24V,V
GS
=0
V
GS
=-10V, I
D
=-
4.2A
-1.
3
±
100
-1
-5
50
65
120
_
_
_
Static Drain-Source On-Resistance
2
R
DS(ON)
_
_
m
Ω
V
GS
=-4.5V, I
D
=-
4
.
0
A
V
GS
=-2.5V, I
D
=-1.0A
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Rg
_
_
_
_
_
_
_
_
_
_
9.4
2
3
6.3
3.2
38.2
12
954
115
77
6
nC
I
D
=-
4
A
V
DS
=-
15
V
V
GS
=-4.5V
_
_
_
_
_
_
_
V
DS
=-15V
nS
V
GS
=-10V
R
G
=
6
Ω
R
L
=
3.6
Ω
pF
V
GS
=0V
V
DS
=-
1
5V
f=1.0MHz
_
_
Ω
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Symbol
V
SD
Trr
Qrr
Min.
_
Typ.
_
Max.
-1.0
Unit
V
Test Condition
I
S
=-1.0A, V
GS
=0V.
Is=-4 A, V
GS
=0
dl/dt=100A/uS
_
_
_
20.2
11.2
_
_
_
-2.2
nS
nC
A
Reverse Recovery Charge
Continuous Source Current (Body Diode)
I
S
V
D
=V
G
=0V,V
S
=-1.0V
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG3401
-4.2A, -30V,R
DS(ON)
50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
10
1
0.1
0.1
0.01
0.
0.001
0.0
0.0001
0.0
0.00001
0.00 01
0.000001
01
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG3401
-4.2A, -30V,R
DS(ON)
50m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Normalized Maximum Transient Thermal Impedance
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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