SMG2398N
Elektronische Bauelemente
2.2 A, 60 V, R
DS(ON)
194 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low R
DS(on)
assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and battery-
powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package saves board space.
F
G
H
J
PRODUCT SUMMARY
SMG2398N
V
DS
(V)
60
R
DS
(on) (m
194@V
GS
= 10V
273@V
GS
= 4.5V
I
D
(A)
2.2
1.8
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS(T
A
=25
°C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Tj, Tstg
Ratings
Maximum
Unit
V
V
A
A
A
A
W
W
°C
60
±20
2.2
1.7
±15
1.7
1.3
0.8
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
1
Notes
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
t
≦
5 sec
Steady State
Symbol
R
JA
Maximum
100
166
Unit
°C
/ W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2010 Rev. A
Page 1 of 2
SMG2398N
Elektronische Bauelemente
2.2 A, 60 V, R
DS(ON)
194 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol Min.
V
GS(th)
I
GSS
1.0
-
-
Typ. Max.
-
-
-
-
-
-
-
8
-
-
±100
1
Unit
V
nA
Test Conditions
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 48V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-
50
-
194
uA
V
DS
= 48V, V
GS
= 0V, T
J
= 55°C
A
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 2.2A
mΩ
-
273
-
1.2
S
V
V
GS
= 4.5V, I
D
= 1.8A
V
DS
= 4.5V, I
D
= 2.2A
I
S
= 1.7A, V
GS
= 0V
On-State Drain Current
1
I
D(on)
10
-
Drain-Source On-Resistance
1
R
DS(ON)
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
DYNAMIC
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-Ddrain Reverse
Recovery Time
Notes
1
2
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
T
RR
-
-
-
-
-
-
-
-
4.0
4.0
2.0
10
10
20
10
50
-
-
-
-
-
-
-
-
I
F
=1.7A, di/dt=100 A / uS
nS
V
DD
= 30V, V
GEN
= 10V,
R
L
= 30, I
D
= 1A
nC
V
DS
= 30V, V
GS
= 5V,
I
D
= 2.2A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2010 Rev. A
Page 2 of 2
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