SMG2358N
Elektronische Bauelemente
3.1 A, 60 V, R
DS(ON)
92 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
trench process to provide Low R
DS(on)
and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves
board space.
Fast switching speed.
High performance trench technology.
F
G
H
J
REF.
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
60
±20
3.1
2.5
15
1.9
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient
1
t≦10 sec
Steady State
R
θJA
100
166
°C
/ W
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jul-2013 Rev. D
Page 1 of 4
SMG2358N
Elektronische Bauelemente
3.1 A, 60 V, R
DS(ON)
92 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
Min.
1
-
-
-
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
10
0.74
Max.
-
±100
1
25
-
92
107
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test Conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
= ±20V
V
DS
=48V, V
GS
=0
V
DS
=48V, V
GS
=0, T
J
= 55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2A
V
DS
=15V, I
D
=2.5A
I
S
=1A, V
GS
=0
Dynamic
2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
330
31
27
4
1
1.7
3
6
17
5
-
-
-
-
-
-
-
-
-
-
nS
nC
pF
V
DS
=15V,
V
GS
=0,
f=1MHz
V
DS
=30V,
V
GS
=4.5V,
I
D
=2.5A
V
DS
=30V,
V
GEN
=10V,
R
L
=12Ω,
I
D
=2.5A,
R
GEN
=6Ω
Notes
1 Pulse test：PW≦300μs duty cycle≦2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jul-2013 Rev. D
Page 2 of 4
SMG2358N
Elektronische Bauelemente
3.1 A, 60 V, R
DS(ON)
92 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jul-2013 Rev. D
Page 3 of 4
SMG2358N
Elektronische Bauelemente
3.1 A, 60 V, R
DS(ON)
92 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jul-2013 Rev. D
Page 4 of 4
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