SMG2339P
Elektronische Bauelemente
-3.6 A, -30 V, R
DS(ON)
0.057
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density process
Low R
DS(on)
assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry.
Typical applications are lower voltage application, power management in
portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
1
SC-59
A
3
L
3
Top View
2
C B
1
2
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Fast Switch.
Low Gate Charge.
Miniature SC-59 surface mount package saves board space.
K
E
D
F
G
H
J
REF.
PRODUCT SUMMARY
PRODUCT SUMMARY
V
DS
(V)
-30
R
DS
(on) (
0.057@V
GS
= -4.5V
0.089@V
GS
= -2.5V
I
D
(A)
-3.6
-2.8
Gate
Drain
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
A
Pulsed Drain Current
B
Continuous Source Current (Diode Conduction)
A
Power Dissipation
A
T
A
=25°C
T
A
=70°C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
RATING
-30
±12
±3.6
±2.9
±10
0.4
1.25
0.8
-55 ~ 150
100
150
UNIT
V
V
A
A
A
W
°C
°C/W
T
A
=25°C
P
D
T
A
=70°C
Operating Junction and Storage Temperature Range
T
J
, T
STG
THERMAL RESISTANCE DATA
t≦5 sec
Maximum Junction to Ambient
A
R
θJA
Steady-State
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Jul-2010 Rev. A
Page 1 of 2
SMG2339P
Elektronische Bauelemente
-3.6 A, -30 V, R
DS(ON)
0.057
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
PARAMETER
SYMBO MIN TYP MAX UNIT
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
Drain-Source On-Resistance
Forward Transconductance
A
Diode Forward Voltage
A
TEST CONDITIONS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
-0.80
-
-
-
-2
-
-
-
-
-
-
-
-
-
-
-
2
-0.70
-
±100
-1
-10
-
57
89
-
-
V
nA
μA
A
mΩ
S
V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= ±12V
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
=55
°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -2.8A
V
DS
= -5V,
,
I
D
= -3.6A
I
S
= -0.4A, V
GS
= 0V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes
a.
b.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
25
2.4
3.9
7.6
6.8
33.6
23.2
-
-
-
-
-
-
-
nS
nC
I
D
= -3.6A
V
DS
= -10V
V
GS
= -5V
V
DS
= -15V
I
D
= -1A
V
GEN
= -10V
R
G
= 50Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Jul-2010 Rev. A
Page 2 of 2
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