SMG2334NE
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
3
SC-59
L
3
Top View
C B
1
2
2
FEATURES
1
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.
K
E
D
F
G
H
J
REF.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
30
±12
3.5
2.8
20
1.9
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t≦10 sec
Steady-State
R
θJA
100
166
°C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 1 of 4
SMG2334NE
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min.
Static
1
-
-
-
7
-
-
-
-
Typ.
-
-
-
-
-
-
-
10
0.69
Max.
-
±10
1
25
-
58
82
-
-
Unit
V
nA
μA
A
mΩ
S
V
Teat Conditions
V
DS
= V
GS
, I
D
= 250μA
V
DS
=0, V
GS
= ±12V
V
DS
=16V, V
GS
=0
V
DS
=16V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=4.5V
V
GS
=4.5V, I
D
=2.8A
V
GS
=2.5V, I
D
=2.4A
V
DS
=10V,
,
I
D
=2.8A
I
S
=1A, V
GS
=0
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Dynamic
2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
413
76
67
6
0.9
1.9
8
21
49
26
-
-
-
-
-
-
-
nS
nC
pF
V
DS
=15 V,
V
GS
=0,
f=1 MHz
I
D
=2.8A
V
DS
=10V
V
GS
=4.5V
I
D
=2.8A,
V
DS
=10V
V
GEN
=4.5V
R
L
=3.6Ω,
R
GEN
=6Ω
Notes
1. Pulse test：PW≦300 us duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 2 of 4
SMG2334NE
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 3 of 4
SMG2334NE
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 4 of 4
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