SMG2305
Elektronische Bauelemente
-4.2A, -20V,R
DS(ON)
65m
Ω
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Description
The SMG2305 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
The SMG2305 is universally preferred for all commercial
industrial surface mount application and suited for low
L
S
A
SC-59
Dim
A
1
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
2
3
Top View
B
B
C
D
G
H
J
K
L
S
D
voltage applications such as DC/DC converters.
G
D
J
K
Drain
Gate
Source
Features
* Super high dense cell design for extremely low R
DS(ON)
* Reliable and rugged
H
C
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
All Dimension in mm
G
Marking : 2305
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
3
Symbol
V
DS
V
GS
o
I
D
@T
A
=25
C
Ratings
-20
±12
-4.2
-3.4
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W /
o
C
o
I
D
@T
A
=70
o
C
I
DM
P
D
@T
A
=25
o
C
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
90
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SMG2305
Elektronische Bauelemente
-4.2A, -20V,R
DS(ON)
65m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=70
C
)
o
o
o
Unless otherwise specified)
Min.
-20
_
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Typ.
_
Max.
_
_
Unit
V
V/
V
nA
uA
uA
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C ,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
12V
V
DS
=-20V,V
GS
=0
V
DS
=-16V,V
GS
=0
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-4.2A
o
-0.1
_
_
_
_
_
_
-0.5
_
_
_
_
_
_
±
100
-1
-10
53
65
100
250
_
Static Drain-Source On-Resistance
2
R
DS(ON)
_
_
_
_
m
Ω
V
GS
=-2.5V, ID=-2A
V
GS
=-1.8V, ID=-1A
Total Gate Charge
2
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
9
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
_
_
_
nC
I
D
=-4.2A
V
DS
=-16V
V
GS
=-4.5V
_
_
_
_
_
_
_
V
DS
=-15V
I
D
=-4.2A
nS
V
GS
=-10V
R
G
=6
Ω
R
D
=3.6
Ω
_
_
_
_
_
_
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
_
_
S
V
DS
=-5V, I
D
=-2.8A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Trr
Qrr
Min.
_
_
Typ.
_
Max.
-1.2
Unit
V
Test Condition
I
S
=-1.2A, V
GS
=0V.
Is=-4.2A,V
GS
=0V
dl/dt=100A/uS
Reverse Recovery Time
Reverse Recovery Charge
27.7
_
_
nS
_
22
nC
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG2305
Elektronische Bauelemente
-4.2A, -20V,R
DS(ON)
65m
Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG2305
Elektronische Bauelemente
-4.2A, -20V,R
DS(ON)
65m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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