Preliminary
Datasheet
RJM0603JSC
Silicon N/P Channel Power MOS FET (6 in 1 Type)
High Speed Power Switching
Features
For Automotive applications
AEC-Q101 compliant
N/P Channel MOS FET (6 in 1 Type). High density mounting
Low on-resistance
Capable of 4.5 V gate drive
R07DS0339EJ0501
Rev.5.01
Jul 22, 2011
Outline
RENESAS Package Code: PRSP0020DF-A
(Package Name: HSOP-20)
MOS6
Pch
19
S
MOS5
Pch
14
S
MOS4
Pch
11
S
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
Page 1 of 11
RJM0603JSC
Preliminary
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
21
Common Header
22
Common Header
23
Common Header
(Top View)
No.
MOS6
Pch
19
S
(Bottom View)
MOS5
Pch
14
S
MOS4
Pch
11
S
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
20
G
17
G
12
G
D 3,18,21
2
G
7
G
D 5,6,15,16,22
10
G
D 8,13,23
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Avalanche current
Avalanche energy
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
Note2
Pch
I
AP
Note
3
E
AR
Note
3
Tch
Note
4
Tstg
Value
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
60
+20 / –5
20
80
54
20
34
175
–55 to +150
–60
–20 / +5
–20
–80
54
20
34
175
–55 to +150
Unit
V
V
A
A
W
A
mJ
C
C
PW
10s duty cycle
1%
1 Drive Operation ; Value at Tc = 25C
Value at Tch = 25C, Rg
50
AEC-Q101 compliant
Thermal Impedance Characteristics
Channel to case thermal impedance
ch-c:
2.78C/W
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
Page 2 of 11
RJM0603JSC
Preliminary
Electrical Characteristics
MOS1, MOS2, MOS3 (N Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
16
21
2600
290
140
43
6.2
7.2
13
6
65
4.5
0.91
35
Max
10
10
2.5
20
32
—
—
—
—
—
—
—
—
—
—
1.18
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= 60 V, V
GS
= 0
V
GS
= +20 V / –5 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note5
I
D
= 10 A, V
GS
= 4.5 V
Note5
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A,
V
DD
30 V, R
L
= 3
,
R
G
= 4.7
I
F
= 20 A, V
GS
= 0
Note5
I
F
= 20 A, V
GS
= 0
di
F
/dt = 100 A/s
MOS4, MOS5, MOS6 (P Channel)
(Ta = 25C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
6. Pulse test
Symbol
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
32
42
2600
330
240
53
8.8
13
22
17
100
20
–0.95
50
Max
–10
10
–2.5
40
64
—
—
—
—
—
—
—
—
—
—
–1.24
—
Unit
A
A
V
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
DS
= –60 V, V
GS
= 0
V
GS
= –20 V / +5 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –10 A, V
GS
= –10 V
Note6
I
D
= –10 A, V
GS
= –4.5 V
Note6
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
V
DD
= –25 V, V
GS
= –10 V,
I
D
= –20 A
V
GS
= –10 V, I
D
= –10 A,
V
DD
–30 V, R
L
= 3
,
R
G
= 4.7
I
F
= –20 A, V
GS
= 0
Note6
I
F
= –20 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
Page 3 of 11
RJM0603JSC
Preliminary
Main Characteristics
MOS1, MOS2, MOS3 (N Channel)
Maximum Safe Operation Area
1000
Tc = 25°C
1 shot Pulse
Typical Output Characteristics
50
10 V
Tc = 25°C
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
100
40
5V
30
3.1 V
10
μ
s
s
0
μ
s
10
m
1
10
1
PW = 10 ms
20
V
GS
= 2.8 V
Operation
in this area
0.1
is limited R
DS(on)
DC Operation
10
0.01
0.1
1
10
100
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
100
Pulse Test
I
D
= 10 A
80
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
1
Tc = 175°C
0.1
25°C
0.01
−40°C
0.001
0
1
2
3
4
5
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Typical Transfer Characteristics
60
40
Tc = 175°C
20
25°C
−40°C
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source State On Resistance
vs. Drain Current
100
Tc = 25°C
Pulse Test
V
GS
= 4.5 V
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
I
D
= 10 A
40
V
SG
= 4.5 V
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
30
10
10 V
20
10 V
10
0
−50
1
1
10
100
0
50
100
150
200
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
Page 4 of 11
RJM0603JSC
MOS1, MOS2, MOS3 (N Channel)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ciss
50
V
GS
40
V
DD
= 25 V
10 V
5V
Preliminary
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
20
Capacitance C (pF)
16
1000
Coss
100
Crss
Tc = 25°C
V
GS
= 0
f = 1 MHz
10
0
10
20
30
40
30 V
DS
20
V
DD
= 25 V
10 V
5V
20
40
60
12
8
10
Tc = 25°C
I
D
= 20 A
80
4
0
0
100
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E
AR
(mJ)
20
Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
0
25
I
AP
= 20 A
V
DD
= 25 V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
Tc = 25°C
Pulse Test
16
12
8
10 V
4
V
GS
= 0 V,
−5
V
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150 175
Source to Drain Voltage V
SD
(V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Avalanche Waveform
1
2
L
•
IAP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
Page 5 of 11
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