AH11
High Dynamic Range Dual Amplifier
Applications
Mobile Infrastructure
Defense / Homeland Security
Fixed Wireless
SOIC-8 package
Product Features
150 – 3000 MHz
+44 dBm OIP3 (1900 MHz, balanced circuit)
Single-ended performance:
13.5 dB Gain
2.7 dB Noise Figure
+21 dBm P1dB
Single +5 Volt Supply
Lead-free / RoHS-compliant SOIC-8 package
Functional Block Diagram
General Description
The AH11 is a high linearity amplifier for use in digital
communication systems. It combines low noise figure and
high intercept point into a low-cost SMT solution. This
device extends the linear efficiency advantages of
TriQuint’s AH1 to higher power levels by combining two
internally matched die. This dual-amplifier configuration
allows for the optimal design of balanced or push-pull
operation. The amplifier can also be used for single-ended
operation in each branch of a diversity receive system.
A mature and reliable GaAs MESFET technology is
employed to maximize linearity while achieving low noise
figure. The SOIC-8 package is lead-free /RoHS-compliant
package and is thermally enhanced to achieve an MTTF
greater than 100 years at a case temperature of 85C. All
devices are 100% RF and DC tested.
Pin Configuration
Pin No.
1
2, 3, 6, 7
4
5
8
Backside Paddle
Function
RF In (Amp 1)
RF/DC GND
RF In (Amp 2)
RF Out (Amp 2)
RF Out (Amp 1)
RF/DC GND
Ordering Information
Part No.
AH11-G
AH11BAL-PCB
Description
High Dynamic Range Dual Amplifier
0.6-2.1 GHz Balanced Eval Board
Standard T/R size = 500 pieces on a 7” reel.
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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AH11
High Dynamic Range Dual Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
Recommended Operating Conditions
Parameter
V
dd
T
ch
(for >10
6
hours MTTF)
Operating Temp. Range
Rating
Min Typ Max Units
+5
-40
+160
+85
V
o
C
o
C
-55 to +125
C
4 dB above Input
RF Input Power, CW, 50Ω,T = 25ºC
P1dB
Supply Voltage
+6 V
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications (Single-Ended Configuration)
Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz, 50
System, tested on each single-
ended amplifier (there are two amplifiers in an AH11 package)
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Supply Voltage (V
dd
)
Operating Current (I
dd
)
Thermal Resistance (jnc. to case)
Conditions
Min
150
12.4
Typical
800
13.5
-8
-15
+21
+41
2.7
5
150
Max
3000
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
C/W
See Note 1.
See Note 2.
+37
120
180
29
Notes:
1. S21 and S11 can be improved in the band of interest with some slight input tuning.
2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression of the largest IM3 product
is used to calculate the OIP3 using a 2:1 rule. Slight OIP3 degradation of about 2 dB is expected to occur at lower temperatures (from
25 ºC to –40 ºC).
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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AH11
High Dynamic Range Dual Amplifier
Device Characterization Data
S-Parameter Data
S-Parameters, single unmatched device (2 per package): V
dd
= +5 V, 100% I
DSS
, T = 25
C,
50
system, calibrated to device leads
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S11 (dB)
-2.63
-9.02
-9.98
-10.09
-10.11
-9.98
-9.69
-9.28
-8.86
-8.41
-7.81
-7.26
-6.70
S11 (ang)
-31.03
-47.58
-61.76
-83.24
-102.89
-122.71
-141.39
-159.83
-175.83
169.88
155.71
143.52
133.22
S21 (dB)
17.82
14.82
14.31
13.83
13.29
12.76
12.18
11.61
11.06
10.49
9.92
9.41
8.81
S21 (ang)
162.23
156.18
144.67
132.14
119.28
106.77
94.43
83.21
72.08
61.25
50.78
41.01
31.62
S12 (dB)
-23.39
-20.06
-20.01
-20.02
-20.11
-20.25
-20.31
-20.53
-20.71
-20.82
-20.98
-21.11
-21.22
S12 (angle)
47.82
8.90
-1.10
-6.79
-11.57
-14.32
-18.20
-21.39
-24.33
-27.30
-29.62
-31.71
-34.23
S22 (dB)
-6.12
-16.47
-20.37
-21.92
-21.92
-22.27
-22.53
-22.93
-23.65
-23.68
-23.88
-25.42
-24.24
S22 (ang)
-36.95
-55.07
-43.85
-31.28
-23.71
-17.24
-17.00
-10.89
-9.69
-13.98
-1.56
-1.60
5.13
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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AH11
High Dynamic Range Dual Amplifier
Reference Design 600-2100 MHz (AH11BAL-PCB)
Bill of Material
Ref. Des.
Q3
Q1, Q2
C1, C2, C4, C5, C8
C3
C6
C7
L1, L2
R1, R2
Value
n/a
n/a
56 pF
2.0 pF
4700 pF
0.01 uF
12 nH
50
Ω
Description
Dual Amplifier, SOIC-8 Package
SMT 90 deg. Hybrid Coupler
Cap, Chip, 0603, 5%, 50V, NPO
Cap, Chip, 0603, +/-0.1 pF, 50V NPO
Cap, Chip, 0603, 5%, 50V, X7R
Cap, Chip, 0805, 5%, 50V, X7R
Ind, Chip, 0603, 5%, Ceramic
Res, Chip, 0603, 5%
Manufacturer
TriQuint
Anaren
various
various
various
various
various
various
Part Number
AH11-G
11305-3
Typical Performance 600-2100 MHz (AH11BAL-PCB)
Test conditions unless otherwise noted:
V
dd
= 5V, I
dd
= 300 mA, +25 °C
Frequency
Gain
Input Return Loss
Output Return Loss
Noise Figure
Output IP2
Output IP3
Gain vs. Frequency
15
12
9
6
3
0
600
900
1200
1500
Frequency (MHz)
1800
2100
MHz
dB
dB
dB
dB
dBm
dBm
600
10.7
-10
-13
7.6
+63
+42
Return Loss vs. Frequency
900
12.2
-10
-18
4.1
+65
+46
1900
11.2
-14
-10
4.2
+65
+44
2100
10.6
-10
-10
5.6
+63
+45
OIP3 vs. Frequency
50
45
0
-5
OIP3 (dBm)
Gain (dB)
RL (dB)
-10
-15
S11
40
35
30
25
S22
-20
-25
600
900
1200
1500
Frequency (MHz)
1800
2100
600
900
1200
1500
1800
2100
Frequency (MHz)
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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4 of 7
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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AH11
High Dynamic Range Dual Amplifier
Pin Description
Pin
1
2, 3, 6, 7
4
5
8
n/a
Label
RF In (Amp 1)
Ground
RF In (Amp 2)
RF Out (Amp 2)
RF Out (Amp 1)
Backside Paddle
Description
RF Input. Requires matching circuit to 50
Ω.
See application circuits.
RF/DC ground. Provide via path to ground.
RF Input. Requires matching circuit to 50
Ω.
See application circuits.
RF Output. Requires DC blocking capacitor. See application circuits.
RF Output. Requires DC blocking capacitor. See application circuits.
Use recommended via pattern to minimize inductance and thermal resistance
Applications Information
PC Board Layouts
PCB Material (stackup):
1/2oz. Cu top layer
0.014 inch Nelco N-4000-13
1/2oz. Cu middle layer 1
Core Nelco N-4000-13
1/2 Cu middle layer 2
0.014 inch Nelco N-4000-13
1/2oz. Cu bottom layer
Finished board thickness is 0.062±.006
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB land
pattern has been developed to accommodate lead and package
tolerances. Since surface mount processes vary from company to
company, careful process development is recommended.
For further technical information, Refer to
http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH11
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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