AH1-1
High Dynamic Range Amplifier
Product Features
250 – 4000 MHz
+41 dBm OIP3
3 dB Noise Figure
13.5 dB Gain
+21 dBm P1dB
Lead-free/Green/
RoHS-compliant
SOT-89 Package
Single +5 V Supply
MTTF > 100 years
Product Description
The AH1-1 is a high dynamic range amplifier in a low-
cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The AH1-1 is a specially screened version of the AH1
offering a very narrow gain spread from device to device.
The device combines dependable performance with
superb quality to maintain MTTF values exceeding 100
years at mounting temperatures of +85C. The AH1-1 is
available in both the standard SOT-89 package and the
environmentally-friendly
lead-free/green/RoHS-
compliant SOT-89 package.
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH1-1 will work for other applications within the 250 to
4000 MHz frequency range such as fixed wireless.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / Wi-Bro / WiMAX
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output / Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
(3)
Operating Current Range
Supply Voltage
Typical Performance
(4)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
Min
250
12.9
Typ
800
13.3
8
15
+21.7
+41
3
150
5
Max
4000
13.8
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(2)
IS-95 Channel Power
(5)
Noise Figure
Supply Voltage
Device Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
mA
900
14.2
-21
-14
+21.7
+42
+15.5
3.2
Typical
1900
12.2
-14
-13
+22
+41
+16.5
3.3
5
150
2140
12.0
-21
-11
+22
+40
3.3
+37
120
180
1. Test conditions unless otherwise noted: T = 25 ºC, 50
system.
2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Not Recommended for
New Designs
Recommended Replacement
Part: TQP3M9007
Ordering Information
Part No.
AH1-1G
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Supply Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
Junction Temperature for >10
6
hours MTTF
Operation of this device above any of these parameters may cause permanent
damage.
Specifications and information are subject to change without notice
Rating
-40 to +85
C
-55 to +150
C
+6 V
+10 dBm
+160
C
59 C / W
Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
Typical Device Data
S-Parameters (V
DS
= +5 V, I
DS
= 150 mA, T = 25C, unmatched device in a 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
OIP3 Load Pull Circles
900 MHz
IP3=35
IP3=36
IP3=37
IP3=38
IP3=39
IP3=41
VSWR=1.5
VSWR=2
VSWR=3
VSWR=4
VSWR=5
S-Parameters (V
D
= +5 V, I
D
= 150 mA, T = 25
C,
calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
-2.65
-7.97
-8.57
-8.47
-8.24
-7.79
-7.18
-6.55
-6.03
-5.69
-5.55
-5.68
-5.86
-29.52
17.80
164.25
-24.29
45.18
-8.25
-44.15
15.28
158.50
-21.31
6.75
-19.01
-60.61
14.91
147.54
-21.11
-3.83
-25.15
-80.72
14.60
134.66
-21.11
-10.90
-29.26
-100.99
14.22
121.38
-21.21
-17.00
-30.76
-120.81
13.80
108.59
-21.21
-23.01
-29.83
-138.15
13.27
96.13
-21.41
-28.54
-29.30
-152.70
12.69
84.26
-21.62
-33.67
-29.12
-164.30
12.11
73.25
-21.83
-38.35
-28.24
-173.54
11.57
62.88
-21.99
-42.48
-26.58
176.22
11.12
52.70
-22.10
-46.41
-25.60
166.67
10.76
42.57
-22.16
-50.57
-26.12
153.06
10.40
31.81
-22.27
-55.21
-29.48
Device S-parameters are available for download off of the website at: http://www.tqs.com
-39.80
-65.37
-69.25
-84.69
-115.12
-88.78
-94.19
-136.07
-112.00
-97.44
-90.19
-87.80
-82.67
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 2 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB)
Vcc = +5 V
Typical RF Performance at 25
C
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
(+5 dBm / tone, 10 MHz spacing)
ID=C5
C=56 pF
All passive components are of size 0603 unless otherwise noted.
Component C1 is shown in the silkscreen but is not used for this
configuration.
Z0=22 Ohm
EL=15.2 Deg
F0=0.9 GHz
ID=Q1
NET="AH1"
ID=C4
L=12 nH
MHz 900 1900 2140
dB
14.2 12.2 12.0
dB
-21
-14
-21
dB
-14
-13
-11
dBm +21.7 +22 +22
dBm
+42
+41
+40
ID=C2
C=56 pF
ID=C6
C=56 pF
ID=C3
L=5.6 nH
IS-95 Channel Power
(@-45 dBc ACPR, 9 channels fwd)
dBm +15.5 +16.5
dB
3.2
3.3
3.3
+5V @ 150mA
Noise Figure
Device Bias
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 50 Microstrip line details: width = .025”.
Gain and Output IP3 vs. Temperature
Frequency = 800, 801 MHz @ Pout =5dBm
15
14
Gain (dB)
45
Output IP3 (dBm)
44
43
42
Gain
OIP3
41
40
-40
-15
10
35
60
85
Temperature (
o
C)
13
12
11
10
P1dB and Noise Figure vs. Temperature
23
P1dB (dBm)
Frequency = 800 MHz
4
3
2
P1dB
NF
22
21
20
19
-40
-15
10
35
60
85
Temperature (
o
C)
1
0
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 3 of 5
May 2012
Noise Figure (dB)
AH1-1
High Dynamic Range Amplifier
250 - 650 MHz Reference Design
Gain / Return Loss
16
0
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
C=1000 pF
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
MHz
dB
dB
dB
dBm
dBm
dB
Gain (dB)
14
-10
S11, S22 (sB)
250
14.8
-10
-19
450 650
14.5 13.8
-36
-11
-17
-13
+22
+42
2.8
2.8
3.2
+5V @ 150mA
15
-5
L=82 nH
NET="AH1"
L=15 nH
C=1000 pF
13
-15
12
-20
11
0.2
0.3
0.4
0.5
Frequency (GHz)
0.6
0.7
-25
900 MHz Reference Design
Freq.
ain
S11
S22
P1dB
OIP3
NF
Bias
MHz
dB
dB
dB
dBm
dBm
dB
800
900
1000
13.7 13.7 13.6
-13
-16
-18
-13
-14
-15
+22
+41
2.5
+5V @ 150mA
Gain / Return Loss
15
DB(|S(2,1)|) (L)
14
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
-5
L=100 nH
0
+5 V
C=100 pF
Gain (dB)
13
-10
S11, S22 (dB)
C=100 pF
NET="AH1"
C=100 pF
12
-15
11
-20
L=12 nH
10
0.7
0.8
0.9
Frequency (GHz)
1
1.1
-25
2350 MHz Reference Design
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
GHz
dB
dB
dB
dBm
dBm
dB
2.3
12.0
-24
-12
2.35 2.4
12.0 11.9
-40
-25
-13
-14
+22
+41
3.7
+5V @ 150mA
Gain / Return Loss
13
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
0
C=56 pF
12
-5
S11, S22 (sB)
Gain (dB)
11
-10
TLINP
Z0=50 Ohm
L=250 mil
Eeff=3.4
Loss=0
F0=0 GHz
L=22 nH
NET="AH1"
C=56 pF
10
-15
9
-20
C=1.2 pF
8
2.1
2.2
2.3
2.4
Frequency (GHz)
2.5
2.6
-25
3500 MHz Reference Design
Freq.
Gain
S11
S22
P1dB
OIP3
NF
Bias
GHz
dB
dB
dB
dBm
dBm
dB
3.5
3.8
9.9
9.5
-18
-14
-17
-16
+21.6
+41
4.8
4.3
4.1
+5V @ 150mA
3.3
9.8
-10
-16
Gain / Return Loss
11
0
+5V
C=18 pF
DB(|S(1,1)|) (R)
10
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
-5
S11, S22, (dB)
TLINP
Z0=80 Ohm
L=50 mil
Eeff=3.4
Loss=0
F0=0 GHz
L=12 nH
NET="AH1"
Gain (dB)
9
-10
C=18 pF
8
-15
7
-20
C=1 pF
6
3
3.2
3.4
3.6
Frequency (GHz)
3.8
4
-25
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 4 of 5
May 2012
AH1-1
High Dynamic Range Amplifier
AH1-1G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
C
reflow temperature) and leaded
(maximum 245
C
reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
AH1G 1
XXXX-X
Product Marking
The AH1-1G will be marked with an “AH1G” designator. An
alphanumeric lot code (“XXXX-X”) is also marked below the
part designator on the top surface of the package. A “1” will be
lasermarked in the upper right-hand corner.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
MSL Rating:
Standard:
Class 1B
Passes
500V
to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes
1000V
to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Level 1 at +260
C
convection reflow
JEDEC Standard J-STD-020
Land Pattern
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device.
Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to
ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a heatsink.
Ensure that the ground / thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the region where
the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 5 of 5
May 2012
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