T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Applications
•
•
•
•
•
•
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
•
•
•
•
•
Frequency: DC to 3.5 GHz
Output Power (P
3dB
): 64 W at 3.3 GHz
Linear Gain: 16 dB at 3.3 GHz
Operating Voltage: 28 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G4005528-FS is a 55 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization
can potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Part
T2G4005528-FS
ECCN
EAR99
Description
Packaged part
Flangeless
3.0-3.5 GHz
Evaluation Board
1.0 – 1.4 GHz
Evaluation Board
T2G4005528-FS-
EAR99
EVB1
T2G405528-FS-
EVB2
EAR99
Datasheet: Rev B 06-12-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
(1)
Parameter
Breakdown Voltage (BV
DG
)
Drain Gate Voltage (V
DG
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
D
)
RF Input Power, CW,
T = 25° (P
IN
)
C
Channel Temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
1.
Recommended Operating Conditions
Parameter
(2)
Value
100 V (Min.)
40 V
-7 to 0 V
20 A
-20 to 56 mA
90 W
43 dBm
275 °
C
320 °
C
-40 to 150 °
C
Value
28 V (Typ.)
200 mA (Typ.)
4.0 A (Typ.)
-2.95 V (Typ.)
225 ° (Max)
C
66 (Max)
70 (Max)
Drain Voltage (V
D
)
Drain Quiescent Current (I
DQ
)
Peak Drain Current ( I
D
)
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Power Dissipation, CW (P
D
)
Power Dissipation, Pulse (P
D
)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
2.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied.
Established at Vgs = -8V and Idq = 20mA
RF Characterization – Load Pull Performance at 3.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 28 V, I
DQ
= 200 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CompressionCompression
Gain at 3 dB
Min
Typical
16.8
66.0
61.0
58.4
13.8
Max
Units
dB
W
%
%
dB
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 28 V, I
DQ
= 200 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CompressionCompression
Gain at 3 dB
Min
Typical
16.7
64.5
59.2
56.7
13.7
Max
Units
dB
W
%
%
dB
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
Datasheet: Rev B 06-12-14
© 2014 TriQuint
- 2 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.3 GHz
(1, 2)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 28 V, I
DQ
= 300 mA
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
Vg
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
CompressionCompression
Gain at 3 dB
Gate voltage
Min
14.0
55.0
50.0
45.0
11.0
-3.2
Typical
16.0
62.5
52.0
49.0
13.0
-2.9
Max
Units
dB
W
%
%
dB
V
-2.5
Notes:
1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board
2. V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100µs, 20%
Gate Leakage
Test conditions unless otherwise noted: T
A
= 25 ° V
GS
= -5 V, V
DS
= 28V
C,
Symbol Parameter
I
G-leak
Leakage Gate Current
Min
Typical
Max
4
Units
mA
RF Characterization – Mismatched Ruggedness at 3.50 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 28 V, I
DQ
= 200 mA
C,
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
Notes:
1. V
DS
= 28 V, I
DQ
= 200 mA, CW at P
1dB
Typical
10:1
Datasheet: Rev B 06-12-14
© 2014 TriQuint
- 3 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Notes:
Thermal resistance measured to bottom of package
Test Conditions
DC at 85 ° Case
C
Value
2.1
225
Units
ºC/W
°
C
Median Lifetime
Maximum Channel Temperature
T
BASE
= 85° P
D
= 70 W
C,
240.0
Max. Channel Temperature vs. Pulse Width
Maximum Channel Temperature (oC)
220.0
200.0
180.0
160.0
140.0
5% Duty Cycle
120.0
100.0
1.00E-06
10% Duty Cycle
25% Duty Cycle
50% Duty Cycle
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
Pulse Width (sec)
Datasheet: Rev B 06-12-14
© 2014 TriQuint
- 4 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
T2G4005528-FS
55W, 28V DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts
(1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 200 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
Datasheet: Rev B 06-12-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
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