AH225
1W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
SOIC-8 Package
Product Features
400-2700 MHz
15.5 dB Gain at 2140 MHz
+31 dBm P1dB
+46 dBm Output IP3
300 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
31.5 dBm CW Pout or 23 dBm WCDMA Pout
Lead-free/RoHS-compliant SOIC-8 Package
Functional Block Diagram
General Description
The AH225 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.2 dBm of compressed 1dB power.
The integrated active bias circuitry in the devices enables
excellent stable linearity performance over temperature. It
is housed in a lead-free/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
Pin Configuration
Pin #
1
2, 4, 5
3
6, 7
8
Backside Paddle
Symbol
Vbias
N/C
RF_in
RF_Out
Iref
RF/DC GND
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9103
Ordering Information
Part No.
AH225-S8G
Description
1W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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AH225
1W High Linearity InGaP HBT Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50 , T=25
°
C
Device Voltage,V
cc
, V
bias
Device Current
Device Power
Recommended Operating Conditions
Parameter
°
Rating
-65 to 150 C
+26 dBm
+8 V
900 mA
+5 W
Min
+4.5
-40
Typ
+5
Max Units
+5.25
+85
+200
V
C
°
C
°
V
cc
T
case
T
J
(for >10
6
hours MTTF)
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
cc
= +5 V, I
cq
= 300 mA, T = +25
°
C, in a tuned application circuit.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Channel Power
at -50 dBc ACLR
Noise Figure
V
cc
, V
bias
Quiescent Current, I
cq
Iref
Thermal Resistance (jnc. to case)
θ
jc
Conditions
Min
400
13.3
Typical
2140
15.5
18
9.4
+31.2
+46
+21.3
6
+5
300
15
Max
2700
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
°
C/W
See Note 1
See Note 2
+30
+43
See Note 3
350
35
Notes:
1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.
2. 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.
3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted: V
cc
= +5 V, I
cq
= 300 mA, T = +25
°
C, in an application circuit tuned for each frequency.
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 [See note 4]
WCDMA Channel Power
at -50 dBc ACLR
750
20.1
14.5
7
+30.4
+45
+21.2
940
19.8
10.5
8.4
+31
+47.3
+21.7
1500
17
17.2
11
+31.3
+48
+22
1840
15.1
11
10.7
+30.7
+46
+21.6
1960
15.4
15.4
8.3
+31.3
+53.6
+21.7
2140
15.2
18
9.4
+31
+47
+21.4
2600 MHz
13.2
19.4
5.5
+30.5
+48.7
+21.3
dB
dB
dB
dBm
dBm
dBm
Notes:
4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490,
1840, 1960, 2140, 2600 MHz application circuits respectively.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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2 of 21
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Disclaimer: Subject to change without notice
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AH225
1W High Linearity InGaP HBT Amplifier
Device Characterization Data
Gain and Max Stable Gain
45
40
35
30
Gain (dB)
MSG (dB)
De-embedded S-Parameters
Input Smith Chart
1
Output Smith Chart
1
0.8
4GHz
0.8
0.6
0.6
Gain (dB)
0.4
4GHz
0.4
25
0.2
20
15
10
5
0
0
0.5
1
1.5
2
Frequency (MHz)
2.5
3
-0.75
-0.5 -0.25
0.05 GHz
0.2
0
0
0
-0.2
-0.4
0.25
0.5
0.75
-1
-0.75
-0.5
-0.25
-0.2
-0.4
0
0.25
0.5 0.75
0.05 GHz
1
-0.6
-0.6
-0.8
-0.8
-1
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, Gain (dB). For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line,
DB [MSG]. The impedance loss plots are shown from 0.05-4 GHz.
S-Parameter Data
V
cc
= +5 V, I
cq
= 300 mA, T = +25
°
C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
50
100
200
400
800
1000
1200
1400
1800
2100
2000
2200
2400
2600
2800
3000
S11 (dB)
-2.90
-1.57
-0.99
-0.81
-0.97
-1.12
-1.25
-1.53
-2.52
-4.69
-3.69
-6.45
-13.76
-10.27
-4.15
-1.93
S11 (ang)
-165.27
-171.34
179.84
169.25
152.64
145.10
136.77
128.95
110.16
91.38
98.77
86.18
87.27
171.20
159.31
143.93
S21 (dB)
32.12
28.59
23.57
17.96
12.56
11.02
10.01
9.29
8.93
9.54
9.27
9.79
10.01
8.85
6.56
3.19
S21 (ang)
136.60
116.71
100.17
86.66
69.77
62.27
54.20
46.48
27.07
5.44
13.27
-4.317
-28.04
-57.83
-84.16
-104.79
S12 (dB)
-40.91
-38.86
-37.78
-37.58
-36.47
-36.53
-35.91
-35.54
-34.79
-33.84
-34.06
-33.35
-33.51
-34.02
-35.29
-34.70
S12 (ang)
46.68
31.54
17.25
7.00
-0.03
-6.84
-8.53
-14.78
-32.76
-58.32
-50.56
-72.56
-107.65
-157.07
156.89
116.80
S22 (dB)
-0.94
-1.66
-1.95
-2.15
-2.08
-2.19
-2.20
-2.19
-2.20
-1.92
-2.01
-1.80
-1.25
-0.81
-0.78
-0.99
S22 (ang)
-74.85
-113.38
-143.44
-162.82
-173.99
-175.67
-177.71
-178.63
-179.60
-179.47
179.89
179.99
179.43
175.18
171.95
167.43
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 700-850 MHz
Notes:
1.
See PC Board Layout, page 20 for more information.
2.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R7 = no connect.
3.
The primary RF microstrip characteristic line impedance is 50 .
4.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
5.
Components shown on the silkscreen but not on the schematic are not used.
°
6.
The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin pad (3 at 750 MHz).
7.
C5 is placed against the edge of C6.
°
8.
The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5 at 750 MHz).
9.
C8 is placed against the edge of R5, L2 against C8 and C9 against L2.
10.
Zero ohm jumpers may be replaced with copper traces in the target application layout.
11.
DNP means Do Not Place.
12.
Inductor L3 on Vpd line is critical for linearity performance.
13.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
14.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
15.
All components are of 0603 size unless stated otherwise.
Typical Performance 700-850 MHz
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 20 dBm/tone,
∆f
= 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
Quiescent Collector Current, Icq
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
V
mA
700
20
12
6
+30.4
+44.1
+20.6
+22.8
750
20.1
14.5
7
+30.4
+45
+21.2
+23.6
+5
300
800
20.2
16
8.6
+30.7
+44.6
+21.4
+23.3
850
20
13.3
11.5
+30.6
+44
+21
+23.2
Notes:
1.
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2.
EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
-
4 of 21
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 700-850 MHz
S21 vs. Frequency
22
T=+25°C
Return Loss vs. Frequency
0
T=+25°C
P1dB vs. Frequency
32
T=+25°C
21
Return Loss (dB)
S21 (dB)
-5
S22
31
P1dB (dBm)
20
19
18
17
600
650
700
750
800
Frequency (MHz)
850
900
-10
-15
S11
30
29
28
27
-20
-25
600
650
700
750
800
Frequency (MHz)
850
900
700
730
760
790
Frequency (MHz)
820
850
ACLR vs. Pout vs. Freq
-35
T=+25°C
3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
EVM vs. Pout vs. Freq
3
T=+25°C
OFDM,QAM-64,54 Mb/s
OIP3 vs. Pout / tone vs. Freq
55
700 MHz
750 MHz
800 MHz
850 MHz
1 MHz tone spacing
T=+25°C
-40
ACLR (dBc)
EVM (%)
2.5
50
700 MHz
750 MHz
800 MHz
850 MHz
OIP3 (dBm)
2
-45
-50
-55
-60
19
20
21
22
23
Pout (dBm)
24
25
700 MHz
750 MHz
800 MHz
850 MHz
1.5
1
0.5
0
19
20
21
22
Pout (dBm)
45
40
35
23
24
17
19
21
Pout / tone (dBm)
23
25
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
-
5 of 21
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
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