AH202
30 – 2200 MHz
1W High Linearity Amplifier
Product Features
17 dB Gain @ 900 MHz
+30 dBm P1dB
+47 dBm Output IP3
Single Positive Supply
Internally Matched
Lead-free/RoHS-compliant
6x6mm QFN SMT package
Product Description
The AH202 is a 1-Watt driver amplifier that offers
excellent dynamic range in a low-cost, lead-free/RoHS-
compliant 6x6 mm 28-pin QFN surface-mount package.
This device provides its optimum P1dB and OIP3
performance when biased at + 11 V; It can also be biased
as low as +9 V for lower power applications.
The backside metalization provides excellent thermal
dissipation while allowing visible evidence of solder reflow
across the bottom of the package on a SMT board.
Superior thermal design allows the product an MTTF of
over 100 years at a mounting temperature of +85º C. All
devices are 100% RF & DC tested.
The product is targeted for use as a driver amplifier for
wireless infrastructure or CATV applications where high
linearity and medium power is required.
Functional Diagram
28
1
2
RF IN 3
4
5
6
N/C 7
8
9
10
11
12
13
14
27
26
25
24
23
22
21
20
19 RF OUT
18
17
16
15
Applications
Mobile Infrastructure
CATV / DBS
Optimal for VHF / UHF
broadband applications
Defense / Homeland Security
Function
Input
No Connect
Output/Bias
No Connect or
Ground
Ground
Pin No.
3
7
19
All other pins
Backside
Paddle
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
IS-95 Channel Power
(3)
@ -45dBc ACPR
Typical Performance
(4)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
mA
V
Min
30
14
Typ
800
17
20
18
+30
+47
2.5
+24
330
+11
Max
2200
Parameters
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
IS-95 Channel Power
@ -45dBc ACPR
@ -45dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dB
(3)
Typical
1900
15
17
10
+29.7
+46
3.8
+23
-
2140
15
8
13
+29.4
+45.5
4.8
-
+20.5
+29
+45
900
17
20
18
+30
+47
2.8
+24
-
dBm
(5)
WCDMA Channel Power
390
Supply Bias
dBm
Operating Current Range
Supply Voltage
+11 V @ 330 mA
1. Test conditions unless otherwise noted: 25ºC, Vdd = 11 V in a 50-Ω unmatched fixture.
2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, ±885 kHz offset, 30
kHz bandwidth, Channel BW = 1.23 MHz.
4. Data reflects performance of a typical AH202 in an application circuit including associated circuit
board and passive component losses.
5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, ±5
MHz offset, Integrated Channel BW = 3.84 MHz.
Absolute Maximum Rating
Parameter
Storage Temperature
DC Voltage
RF Input Power (continuous)
Thermal Resistance, Rth
Maximum Junction Temperature
Ordering Information
Part No.
AH202-F
AH202-PCB900
AH202-PCB1900
AH202-PCB2140
Rating
-55 to +125 C
+13 V
+16 dBm
18 C/W
+160 C
Description
1W High Linearity Amplifier
(lead-free/RoHS-compliant 6x6mm QFN package)
900 MHz Evaluation Board
1900 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 500 pieces on a 7” reel
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 7 August 2009
AH202
1W High Linearity Amplifier
Typical Device Data
S-parameters (V
DS
= +11V, I
DS
= 330mA, unmatched device in a 50 Ω system).
Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
Gain
20
19
18
17
Return Losses
0
-5
-10
S11
S22
S21 (dB)
16
(dB)
15
14
13
12
11
10
0
0.5
1
1.5
Frequency (GHz)
2
2.5
-15
-20
-25
-30
0
0.5
1
1.5
Frequency (GHz)
2
2.5
S-Parameters (V
DS
= +11.0V, I
DS
= 330mA, T = +25 C, unmatched device in a 50
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
-17.78
-18.60
-17.34
-14.70
-11.92
-10.29
-9.20
-8.23
-7.74
-7.43
-7.73
-8.76
-10.40
-10.57
-6.72
-3.60
-1.91
S11 (ang)
-137.86
-153.83
-150.80
-149.17
-159.61
-171.08
174.71
160.52
145.06
127.89
108.79
84.28
43.69
-24.74
-90.87
-136.82
-167.99
S21 (dB)
18.26
18.06
18.03
17.87
17.43
16.93
16.36
15.90
15.43
15.04
14.82
14.72
14.59
14.42
13.29
10.89
7.61
S21 (ang)
169.32
166.20
156.86
135.75
115.76
96.20
77.49
58.22
40.52
23.04
4.23
-15.48
-38.77
-65.43
-97.06
-128.44
-154.46
S12 (dB)
-21.43
-21.34
-21.46
-21.84
-22.34
-22.96
-23.72
-24.54
-25.32
-26.07
-26.69
-26.94
-26.60
-25.80
-25.02
-24.82
-25.13
system)
S12 (ang)
1.41
-4.54
-12.16
-25.03
-37.49
-48.84
-61.29
-73.36
-85.56
-99.09
-115.15
-132.95
-155.57
176.52
143.13
111.82
87.68
S22 (dB)
-15.33
-15.51
-16.27
-18.57
-21.38
-26.07
-21.37
-16.16
-12.76
-10.27
-8.39
-7.17
-6.37
-6.14
-6.69
-7.11
-6.73
S22 (ang)
-170.64
177.37
161.24
135.96
93.89
25.81
-47.34
-78.06
-98.55
-114.42
-129.46
-144.14
-158.61
-172.06
176.96
173.14
174.58
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek (
r
=4.2), four layer, 1 oz copper. Microstrip line details: width = .029”, spacing = .036”, total thickness = .062”
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 2 of 7 August 2009
AH202
1W High Linearity Amplifier
Reference Design: 50-800 MHz
The AH202 is suitable for applications between 50 – 800 MHz without any requirements for input or output matching. Only
bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900
evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device.
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1 dB
Output IP3
(+10 dBm / tone, 10 MHz spacing)
MHz 50
200 400
600
800
dB
18.1 17.9 17.6 17.1 16.6
dB -12.6 -17.6 -15.5 -12.9 -10.7
dB -14.8 -17.4 -20.2 -25.9 -21.0
dBm 29.9 30.0 30.1 30.1 30.0
dBm
dB
41.5
47.9
47.1
46.1
45.8
Supply Bias
+11 V @ 330 mA
CAP
ID=C5
C=1e5 pF
+ 11V
CAP
ID=C4 (0805)
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=1000 pF
RES
ID=L2
R=0 Ohm
IND
ID=L1
L=470 nH
PORT
P=2
Z=50 Ohm
SUBCKT
ID=S1
NET="AH202_F"
CAP
ID=C2
C=1000 pF
Measured S - Parameters
20
-5
16
-15
14
-20
12
-25
10
0.04
0.24
0.44
Frequency (GHz)
0.64
0.8
-30
DB(|S(1,1)|) (R)
AH202 50_800MHz
DB(|S(2,1)|) (L)
AH202 50_800MHz
DB(|S(2,2)|) (R)
AH202 50_800MHz
Notes:
R=0 Ω (at designator L2) is used as a place holder for a different application circuit. It can be
removed from the circuit without any effect to the performance.
The microstrip line is weakly co-planar. Ground planes around it are not necessary for
operation of the AH202.
Adequate heat sinking is required for the device. Further mounting instructions are shown in
the AH202 datasheet.
The RF choke should be a wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series is recommended (part #1008CS-471X_B_).
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 3 of 7 August 2009
Magnitude S11, S22 (dB)
18
-10
Magnitude S21 (dB)
AH202
1W High Linearity Amplifier
Application Circuit: 900 MHz (AH202-PCB900)
Typical RF Performance at 25 C
Frequency
S21 - Gain
S11
S22
Output P1dB
Output IP3
IS-95A Ch. Power
@ -45 dBc ACPR
+ 11V
CAP
ID=C5 (1206)
C=100000 pF
900 MHz
17 dB
- 20 dB
- 18 dB
+ 30 dBm
+ 47 dBm
+ 24 dBm
2.8 dB
+11 V
330 mA
CAP
ID=C4 (0805)
C=1000 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=100 pF
IND
ID=L2
L=3.3 nH
SUBCKT
ID=S1
NET="AH202_F"
IND
ID=L1 (1008)
L=33 nH
CAP
ID=C3
C=100 pF
Noise Figure
Supply Voltage
Supply Current
CAP
ID=C6
C=2.7 pF
CAP
ID=C2
C=100 pF
PORT
P=2
Z=50 Ohm
Notes:
1.
2.
3.
4.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-330X_B) is recommended.
C6 is located at silk screen marker “C” on the WJ evaluation board.
S-Parameters
Vd = +11.0V, Temp = +25°C
20
19
18
17
16
15
14
13
12
11
10
700
0
-5
Noise Figure (dB)
S11 & S22 (dB)
Noise Figure vs. Frequency
5
4
3
2
1
0
700
Vd = 11.0V, Temp = 25°C
S2
1
S21 (dB)
-10
-15
S22
S11
-20
-25
1100
800
900
1000
Frequency (MHz)
800
900
1000
Frequency (MHz)
1100
OIP3 vs. Pout
Vd = +11.0V, Temp = +25°C
ACPR vs. Channel Power
900 MHz, IS-95 Ch. Fwd. ± 885KHz offset, 30 KHz Meas. BW
55
50
45
40
35
5
7
9
11
13
Pout (dBm)
15
17
-40
-45
ACPR (dBc)
OIP3 (dBm)
-50
-55
-60
-65
-70
-75
15
17
19
21
23
Output Channel Power (dBm)
25
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 4 of 7 August 2009
AH202
1W High Linearity Amplifier
Application Circuit: 1900 MHz (AH202-PCB1900)
Typical RF Performance at 25 C
Frequency
S21 - Gain
S11
S22
Output P1dB
Output IP3
IS-95A Ch. Power
@ -45 dBc ACPR
+ 11V
CAP
ID=C5 (1206)
C=1e5 pF
1900 MHz
15 dB
- 17 dB
- 10 dB
+ 29.7 dBm
+ 46 dBm
+ 23 dBm
3.8 dB
+11 V
330 mA
CAP
ID=C4 (0805)
C=1000 pF
PORT
P=1
Z=50 Ohm
SUBCKT
ID=S1
NET="AH202_F"
IND
ID=L1 (1008)
L=22 nH
CAP
ID=C3
C=56 pF
CAP
ID=C2
C=56 pF
Noise Figure
Supply Voltage
Supply Current
CAP
ID=L2
C=2.4 pF
TLIN
ID=TL1
Z0=50 Ohm
EL=31 Deg
F0=1900 MHz
CAP
ID=C7
C=1.0 pF
PORT
P=2
Z=50 Ohm
Notes:
1.
2.
3.
The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required.
Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying
capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended.
C8 is located at silk screen marker “7” on the WJ evaluation board.
S-Parameters
Vd = +11.0V, Temp = +25C
Noise Figure
Vd = +11.0 V, Temp = +25°C
16
15
14
13
12
11
10
9
8
7
6
1700
S21
0
6
Noise Figure (dB)
S11 & S22 (dB)
-5
-10
S22
5
4
3
2
1
0
1700
S21 (dB)
-15
-20
-25
2200
S11
1800
1900
2000
2100
Frequency (MHz)
1800
1900
Frequency (MHz)
2000
OIP3 vs. Pout
ACPR vs. Channel Power
1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW
55
50
Vd = +11.0 V, Temp = +25°C
-40
-45
ACPR (dBc)
OIP3 (dBm)
-50
-55
-60
-65
-70
45
40
35
5
7
9
11
Pout (dBm)
13
15
17
-75
14
16
18
20
22
Output Channel Power (dBm)
24
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 5 of 7 August 2009
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