SUM2153
Elektronische Bauelemente
0.81A , 20V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
E
SOT-363
L
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
F
DG
B
C
K
H
J
APPLICATION
DC-DC converter circuit
Load Switch
REF.
A
B
C
D
E
F
MARKING
53
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.10
1.50
0.10
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
8°
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-363
MPQ
3K
Leader Size
7 inch
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Power Dissipation
1
1
Symbol
V
DS
V
GS
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
T
A
= 25°
C
T
A
= 70°
C
I
D
P
D
I
D
P
D
I
DM
T
L
T
J
, T
STG
Rating
10S
20
±6
0.89
0.71
0.38
0.24
0.76
0.61
0.28
0.17
1.4
260
150, -55~150
0.81
0.64
0.31
0.2
0.69
0.55
0.23
0.15
Steady State
Unit
V
V
A
W
A
W
A
°
C
°
C
Continuous Drain Current
Power Dissipation
2
2
Pulsed Drain Current
Lead Temperature
3
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jan-2013 Rev. A
Page 1 of 4
SUM2153
Elektronische Bauelemente
0.81A , 20V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Single Operation
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
1
Rating
Typ.
276
328
375
446
260
310
366
415
498
265
Max.
325
395
445
532
300
360
432
486
575
305
Unit
2
T≦10S
Steady State
T≦10S
Steady State
Steady State
T≦10S
Steady State
T≦10S
Steady State
Steady State
R
θJA
R
θJA
R
θJC
° /W
C
Dual Operation
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
1
R
θJA
R
θJA
R
θJC
2
° /W
C
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°
C.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
Diode Forward On–Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
FS
V
SD
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
T
d(ON)
T
r
T
d(OFF)
T
f
20
-
-
0.45
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.58
220
260
320
2
0.7
50
13
8
1.15
0.06
0.15
0.23
22
80
700
380
-
1
±5
0.85
310
360
460
-
1.5
-
-
-
-
-
-
-
-
-
-
-
nS
V
DD
=10V,
I
D
=0.55A,
V
GS
=4.5V,
R
G
=6 .
nC
V
DS
=10V,
V
GS
=4.5V,
I
D
=0.55A
pF
S
V
m
V
µA
µA
V
V
GS
=0, I
D
=250µA
V
DS
=16V, V
GS
=0
V
DS
=0 , V
GS
= ±5V
V
DS
=V
GS,
I
D
=250µA
V
GS
=4.5V, I
D
=0.55A
V
GS
=2.5V, I
D
=0.45A
V
GS
=1.8V, I
D
=0.35A
V
DS
=5V, I
D
= 0.55A
I
S
=350mA, V
GS
=0
Typ.
Max.
Unit
Teat Conditions
Body-Drain Diode Ratings
Dynamic Characteristics
V
DS
=10V,
V
GS
=0,
f=100KHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jan-2013 Rev. A
Page 2 of 4
SUM2153
Elektronische Bauelemente
0.81A , 20V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jan-2013 Rev. A
Page 3 of 4
SUM2153
Elektronische Bauelemente
0.81A , 20V , R
DS(ON)
310 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jan-2013 Rev. A
Page 4 of 4
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