Preliminary
Datasheet
RJK6029DJA
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 13.5
typ. (at I
D
= 0.1 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High density mounting
REJ03G1895-0100
Rev.1.00
Jun 18, 2010
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
D
G
1. Source
2. Drain
3. Gate
32
1
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
Pch
ch-a
Tch
Tstg
Ratings
600
±30
0.2
0.8
0.2
0.8
0.75
166.7
150
–55 to +150
Unit
V
V
A
A
A
A
W
C/W
C
C
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 1 of 6
RJK6029DJA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
13.5
66
8.7
1.3
30
15
51
175
4.8
0.6
3.2
0.77
220
Max
—
1
±0.1
5
16.5
—
—
—
—
—
—
—
—
—
—
1.30
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.1 A, V
GS
= 10 V
Note2
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.1 A
V
GS
= 10 V
R
L
= 3000
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 0.2 A
I
F
= 0.2 A, V
GS
= 0
Note2
I
F
= 0.2 A, V
GS
= 0
di
F
/dt = 50 A/s
Notes: 2. Pulse test
3. Since this device is equipped with high voltage FET chip (V
DSS
600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 2 of 6
RJK6029DJA
Preliminary
Main Characteristics
Maximum Safe Operation Area
10
Ta = 25°C
1 shot
0.8
Typical Output Characteristics
Ta = 25°C
Pulse Test
4.6 V
4.4 V
4.2 V
4V
Drain Current I
D
(A)
Drain Current I
D
(A)
1
10
PW
=
0.6
5V
10 V
μ
s
0.1
0.4
10
0
μ
s
3.8 V
3.6V
0.01
Operation in this
area is limited by
R
DS(on)
1
10
100
1000
0.2
V
GS
= 3.4 V
0
0.001
0.1
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
1
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
0.1
Tc = 75°C
25°C
−25°C
10
0.01
0.001
2
3
4
5
6
1
0.01
0.1
1
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
30
I
D
= 0.4 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
40
20
0.2 A
10
0.1 A
100
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
0.3
1
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 3 of 6
RJK6029DJA
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
1000
Ta = 25°C
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 0.2 A
Ta = 25
°C
V
GS
V
DD
= 480 V
300 V
100 V
100
Ciss
600
V
DS
400
12
10
Coss
1
V
GS
= 0
f = 1 MHz
0
100
200
300
Crss
8
200
V
DD
= 480 V
300 V
100 V
0
2
4
6
8
4
0.1
0
0
10
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
0.8
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
0.6
4
I
D
= 10 mA
1 mA
0.1 mA
2
1
3
0.4
0.2
0
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK6029DJA
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– a(t) =
γs
(t) •
θch
– a
θch
– a = 166.7°C/W, Ta = 25°C
P
DM
PW
T
0.02
0.03
0.01
ulse
tp
sho
1
0.01
10
μ
100
μ
1m
10 m
100 m
D=
PW
T
1
10
100
1000
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 5 of 6
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
