RH1034-1.2
Micropower Dual
Reference
DESCRIPTION
The RH1034-1.2 is a micropower, precision 1.2V reference
combined with a 7V auxiliary reference. The 1.2V reference
is a trimmed, thin-film, band-gap, voltage reference oper-
ating on only 20μA of quiescent current. The RH1034-1.2
offers guaranteed drift, low temperature cycling hysteresis
and good long-term stability. The low dynamic impedance
makes the RH1034-1.2 easy to use from unregulated sup-
plies. The 7V reference is a subsurface zener device for
less demanding applications.
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Operating Current ..................................................20mA
Forward Current (Note 2) .......................................20mA
Operating Temperature Range................ –55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
L,
LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
PACKAGE INFORMATION
BOTTOM VIEW
1.2V
7V
NC
NC
NC
GND
NC
H PACKAGE
3-LEAD TO-46 METAL CAN
1
2
3
4
5
TOP VIEW
10
9
8
7
6
NC
NC
1.2V
7V
NC
W PACKAGE
10-LEAD CERPAC
BURN-IN CIRCUIT
20V
14k
19.1k
7V
1.2V
RH10341.2 BC
1
RH1034-1.2
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
1.2V Reference
V
Z
ΔV
Z
ΔI
R
Reverse Breakdown Voltage I
R
= 100μA
Reverse Breakdown Voltage 20μA ≤ I
R
≤ 2mA
Change with Current
2mA ≤ I
R
≤ 20mA
Minimum Operating Current
Temperature Coefficient
rz
Reverse Dynamic
Impedance
Low Frequency Noise
Long-Term Stability
7V Reference
V
Z
ΔV
Z
ΔI
R
Reverse Breakdown Voltage I
R
= 100μA
Reverse Breakdown Voltage 100μA ≤ I
R
≤ 1mA
Change with Current
1mA ≤ I
R
≤ 20mA
Temperature Coefficient
I
R
= 100μA
Long-Term Stability
I
R
= 100μA
6.70
7.30
140
250
60
20
1
1
1
6.60
7.40
190
350
2, 3
2, 3
2, 3
V
mV
mV
ppm/°C
ppm/√kHrs
I
R
= 100μA
I
R
= 100μA
I
R
= 100μA, 0.1Hz ≤ f ≤ 10Hz
I
R
= 100μA
3
4
20
1.210
1.240
2.0
8.0
20
60
1.0
1
1
1
1
1
1
1.195
1.255
4.0
15.0
30
60
2.0
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
V
mV
mV
μA
ppm/°C
Ω
μV
P-P
ppm/√kHrs
CONDITIONS
(Preirradiation)
SUB-
GROUP
–55°C ≤ T
A
≤ 125°C SUB-
MIN TYP MAX GROUP
UNITS
T
A
= 25°C
NOTES MIN TYP MAX
TABLE 2: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
1.2V Reference
V
Z
ΔV
Z
ΔI
R
rz
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Change with
Current
Reverse Dynamic
Impedance
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Change with
Current
I
R
= 100μA
20μA ≤ I
R
≤ 2mA
2mA ≤ I
R
≤ 20mA
I
R
= 100μA
3
CONDTIONS
(Postirradiation) T
A
= 25°C.
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370
7.0
15.0
3.5
7.5
16.5
3.75
8.5
18.5
4.25
10.0
22.5
5.0
12.5
30.5
6.25
V
mV
mV
Ω
7V Reference
V
Z
ΔV
Z
ΔI
R
I
R
= 100μA
100μA ≤ I
R
≤ 1mA
1mA ≤ I
R
≤ 20mA
6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334
175
300
175
300
175
300
175
300
175
300
V
mV
mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
Forward biasing either diode will affect the operation of the other
diode.
Note 3:
This parameter guaranteed by “reverse breakdown voltage change
with current” test.
2
RH1034-1.2
TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS
REQUIREMENTS
T
A
= 25°C
ENDPOINTS LIMITS
SYMBOL PARAMETER
V
Z
Reverse Breakdown Voltage
CONDITIONS
I
R
= 100μA
MIN
1.210
MAX
1.240
DELTA LIMITS
MIN
–0.003
MAX
0.003
UNITS
V
TABLE 4: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group B and D for Class S,
End Point Electrical Parameters (Method 5005)
*PDA applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3
1,2,3
1,2,3
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in that
lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
20V
14k
19.1k
7V
1.2V
RH10341.2 BC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
3
RH1034-1.2
TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Breakdown Voltage (1.2V)
1.280
REVERSE BREAKDOWN VOLTAGE (V)
1.270
1.260
1.250
1.240
1.230
1.220
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G01
Reverse Breakdown Voltage
Change with Current (1.2V)
4.5
20μA ≤ I
R
≤ 2mA
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
20
4.0
Reverse Breakdown Voltage
Change with Current (1.2V)
2mA ≤ I
R
≤ 20mA
I
R
= 100μA
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G02
15
10
5
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G03
Reverse Breakdown Voltage (7V)
7.002
I
R
= 100μA
REVERSE BREAKDOWN VOLTAGE (V)
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
7.001
93.0
92.8
92.6
92.4
92.2
92.0
91.8
91.6
91.4
Reverse Breakdown Voltage
Change with Current (7V)
100μA ≤ I
R
≤ 1mA
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
172
170
168
166
164
162
160
158
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G05
Reverse Breakdown Voltage
Change with Current (7V)
1mA ≤ I
R
≤ 20mA
7.000
6.999
6.998
6.997
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G04
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH10341.2 G06
I.D. No. 66-10-103412
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
LT 0909 REV C • PRINTED IN USA
www.linear.com
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LINEAR TECHNOLOGY CORPORATION 2008
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