applications centered at 2.45GHz for application in
ISM/Broadcast/Plasma applications. This product
differentiates itself from other GaN power
transistors in that it runs well in CW. The matching
network is compact and small. The frequency of
operation covers DC - 2.5 GHz which captures
commercial as well as military applications. This
product is designed as a high power driver
amplifier or final stage depending on the
application. Using state of the art wafer fabrication
processes, these high performance transistors
provide high gain, efficiency, bandwidth and
ruggedness over a wide bandwidth for today’s
demanding application needs. The MAGX-000245
-014000 is constructed using a thermally
enhanced Cu/W flanged ceramic package which
provides excellent thermal performance.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Electrical Specifications
1
: Freq. = 2450 MHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= +50 V, I
DQ
= 15 mA, CW Operation
Input Power
Power Gain
Drain Efficiency
2
nd
Harmonics
3
rd
Harmonics
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 14 W
P
OUT
= 14 W
P
OUT
= 14 W
P
OUT
= 14 W
P
OUT
= 14 W
P
OUT
= 14 W
P
OUT
= 14 W
P
IN
G
P
η
D
2Fc
3Fc
VSWR-S
VSWR-T
-
13.8
55
-
-
-
-
0.43
15.2
57
-50
-49
5:1
10:1
0.58
-
-
-
-
-
-
W
dB
%
dBc
dBc
-
-
Rev. V2
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
-
-
-
4.4
1.9
0.2
-
-
-
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 2 mA
V
DS
= 5 V, I
D
= 500 mA
I
DS
V
GS (TH)
G
M
-
-5
0.35
-
-3
-
750
-2
-
µA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (+50V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS.
2
1. Electrical Specifications measured in MACOM RF evaluation board.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Absolute Maximum Ratings
2,3,4
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GG
)
Supply Current (I
DMAX
) for CW Operation at V
DD
= +65 V
Input Power (P
IN
) for CW Operation at V
DD
= +50 V
Absolute Max. Junction/Channel Temperature
Power Dissipation at 85ºC for CW Operation at V
DD
= +50 V
MTTF (T
J
< 200°C)
Thermal Resistance, (T
J
= 200ºC)
V
DD
= 50 V, I
DQ
= 15 mA, CW Operation
Operating Temperature
Storage Temperature
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
Limit
+65 V
-8 to 0 V
800 mA
P
IN
(nominal) + 3 dB
200ºC
11.2 W
600 years
8.5ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
150 V
500 V
Rev. V2
2. Operation of this device above any one of these parameters may cause permanent damage.
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
4. For saturated performance it is recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Test Fixture Assembly (2450 MHz, CW Operation)
Test Fixture Impedances
F (MHz)
2450
Z
IF
(Ω)
0.7 +j1.0
Z
OF
(Ω)
17.9 + j15.5
Rev. V2
Parts List
Reference Designator
C1
C2
C13
C3, C4
C8, C11
C5, C15
C6
C7
C17
C9
C10, C12
L1
R1
R2
R3
R4
C14, L2, L6, R6
J1, J2
4
Part
0402, 0.1 µF, X7R, 10%, 16 V
0402, 10 nF, X7R, 10%, 50 V
0805, 0.1 µf, X7R, 10%, 100 V
0402, 12 pF, ±1%, 200 V
0603, 12 pF, ±2%, 250 V
0402, 2.2 pF, ±0.1 pF , 200 V
0402, 3.9 pF, ±0.1 pF , 200 V
0603, 2.4 pF, ±0.05 pF, 250 V
100 µF, 160 V, Electrolytic Capacitor
0603, 1.5 pF, ±0.05 pF, 250 V
Do Not Populate
10 nH, 0402, 2%
200
Ω,
0402, 5%
3 KΩ, 0402, 5%,
11
Ω,
0402, 1%
2.2
Ω,
1206, 1%
Copper Shorting Tab
SMA Connector
Vendor
Murata
Murata
TDK
ATC
ATC
ATC
ATC
ATC
Panasonic
ATC
-
Coilcraft
Panasonic
Panasonic
Panasonic
Panasonic
MACOM
Tyco Electronics
Contact factory for Gerber file or additional circuit information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000245-014000
GaN on SiC HEMT Power Transistor
14 W, DC - 2.5 GHz, CW Power
Application Section
Typical Performance Curves
2450 MHz, V
DD
= 50 V, I
DQ
= 15 mA, CW Operation, T
A
= 25°C
Output Power vs. Input Power
Gain vs. Output Power
Rev. V2
Drain Efficiency vs. Output Power
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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