GaN Wideband 50 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Features
GaN on SiC D-Mode Transistor Technology
Unmatched, Ideal for Pulsed Applications
50 V Typical Bias, Class AB
Common-Source Configuration
Thermally-Enhanced 3 x 6 mm 14-Lead DFN
MTTF = 600 years (T
J
< 200°C)
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
MSL-1
Rev. V3
Description
The MAGX-000035-05000P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall power transistor size, cost
and weight in a “TRUE SMT” plastic-packaging
technology.
Use of an internal stress buffer technology allows
reliable operation at junction temperatures up to
200°C. The small package size and excellent RF
performance make it an ideal replacement for costly
flanged or metal-backed module components.
Functional Schematic
1
2
3
4
5
6
7
NC NC
G
15
D
D
D
NC NC
12
11
10
9
8
G
G
NC NC
Ordering Information
1,2
Part Number
MAGX-000035-05000P
MAGX-000035-0500TP
MAGX-000035-PB2PPR
Package
Bulk Packaging
250 Piece Reel
Sample Board
NC NC
14
13
Pin Configuration
3
Pin No.
1
Function
No Connection
No Connection
V
GG
/RF
IN
V
GG
/RF
IN
V
GG
/RF
IN
No Connection
No Connection
Pin No.
8
9
10
11
12
13
14
15
Function
No Connection
No Connection
V
DD
/RF
OUT
V
DD
/RF
OUT
V
DD
/RF
OUT
No Connection
No Connection
Paddle
4
1. Reference Application Note M513 for reel size information.
2. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4 or specify a desired
custom range. Custom requests may increase lead times.
2
3
4
5
6
7
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000035-05000P
GaN Wideband 50 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Typical Performance
5
: V
DD
= 50 V, I
DQ
= 100 mA, T
A
= 25°C
Parameter
Gain
Saturated Power (P
SAT
)
Power Gain at P
SAT
PAE @ P
SAT
page 4.
Rev. V3
30 MHz
24
65
22
73
1 GHz
22
65
21
65
2.5 GHz
17
50
15
58
3.5 GHz
14
45
11
53
Units
dB
W
dB
%
5.
Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on
Electrical Specifications: Freq. = 1.6 GHz, T
A
= 25°C, V
DD
= +50 V, Z
0
= 50 Ω
Parameter
RF FUNCTIONAL TESTS
CW Output Power (P2.5 dB)
Pulsed Output Power (P2.5 dB)
1 ms and 10% Duty Cycle
Pulsed Power Gain (P2.5 dB)
Pulsed Drain Efficiency (P2.5 dB)
Load Mismatch Stability (P2.5 dB)
Load Mismatch Tolerance (P2.5 dB)
V
DD
= 28 V, I
DQ
= 100 mA
V
DD
= 50 V, I
DQ
= 100 mA
V
DD
= 50 V, I
DQ
= 100 mA
V
DD
= 50 V, I
DQ
= 100 mA
V
DD
= 50 V, I
DQ
= 100 mA
V
DD
= 50 V, I
DQ
= 100 mA
P
OUT
P
OUT
G
P
η
D
VSWR-S
VSWR-T
-
42
16
55
-
-
12
50
18
66
5:1
10:1
-
-
-
-
-
-
W
W
dB
%
-
-
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Electrical Characteristics: T
A
= 25°C
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
Test Conditions
Symbol
Min.
Typ.
Max.
Units
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 6 mA
V
DS
= 5 V, I
D
= 1500 mA
I
DS
V
GS (th)
G
M
-
-5
1.1
-
-3
-
3.0
-2
-
mA
V
S
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
-
-
-
13.1
5.2
0.5
-
-
-
pF
pF
pF
MAGX-000035-05000P
GaN Wideband 50 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Absolute Maximum Ratings
6,7,8,9,10
Parameter
Input Power
Drain Supply Voltage, V
DD
Gate Supply Voltage, V
GG
Supply Current, I
DD
Power Dissipation, CW @ 85ºC
Power Dissipation (P
AVG
), Pulsed @ 85°C
Junction Temperature
11
Operating Temperature
Storage Temperature
6.
7.
8.
9.
10.
Rev. V3
Absolute Max.
P
OUT
- G
P
+ 2.5 dBm
+65 V
-8 V to 0 V
2500 mA
13 W
43 W
200°C
-40°C to +95°C
-65°C to +150°C
Exceeding any one or combination of these limits may cause permanent damage to this device.
M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits.
For saturated performance it is recommended that the sum of (3 * V
DD
+ abs (V
GG
)) < 175 V.
CW operation at V
DD
voltages above 28 V is not recommended.
Operating at nominal conditions with T
J
≤ 200°C will ensure MTTF > 1 x 10
6
hours. Junction temperature
directly affects device MTTF and should be kept as low as possible to maximize lifetime.
11. Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I) - (P
OUT
- P
IN
))
Typical CW thermal resistance (Ө
JC
) = 9.63°C/W
a) For T
C
= 79°C,
T
J
= 200°C @ 28 V, 840 mA, P
OUT
= 12 W, P
IN
= 0.92 W
Typical transient thermal resistances:
b) 300 µs pulse, 10% duty cycle,
Ө
JC
= 1.6°C/W
For T
C
= 79°C,
T
J
= 117°C @ 50 V, 1090 mA, P
OUT
= 30.2 W, P
IN
= 1.42 W
c) 1 ms pulse, 10% duty cycle,
Ө
JC
= 2.0°C/W
For T
C
= 79°C,
T
J
= 129°C @ 50 V, 1110 mA, P
OUT
= 30.7 W, P
IN
= 1.5 W
d) 1 ms pulse, 20% duty cycle,
Ө
JC
= 2.81°C/W
For T
C
= 79°C,
T
J
= 153°C @ 50 V, 1120 mA, P
OUT
= 30.9 W, P
IN
= 1.59 W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MAGX-000035-05000P
GaN Wideband 50 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Evaluation Board Details and Recommended Tuning Solutions
Parts measured on evaluation board (8-mils thick
RO4003C). Electrical and thermal ground is
provided using copper-filled via hole array (not
pictured), and evaluation board is mounted to a
metal plate.
Matching is provided using lumped elements as
shown at left. Recommended tuning solutions for 2
frequency ranges are detailed in the parts list
below.
Rev. V3
V
D
Bias Sequencing
RF
IN
RF
OUT
Turning the device ON
1. Set V
G
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
D
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
G
down to V
P.
3. Decrease V
D
down to 0 V.
4. Turn off V
G
.
V
G
Parts List (N/A = not applicable for this tuning solution)
Part
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
R1
R2
R3
L1
L2
L3
L4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
Frequency = 1.6 GHz
0402 27 pF, ±5%, 200 V, ATC
0603, 6.8 pF, ±0.1 pF, 250 V, ATC
0505, 100 pF, ±10%, 200 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
N/A
0505, 2.2 pF, ±5%, 250 V, ATC
0505, 36 pF, ±5%, 250 V, ATC
0505, 36 pF, ±5%, 250 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
1210, 1 µF, 100 V, 20%, ATC
N/A
33
Ω,
0805, 5%
1.0
Ω,
0603, 5%
1.0
Ω,
0603, 5%
N/A
N/A
N/A
N/A
Frequency = 0.9 - 1.2 GHz
0402, 8.2 pF, ±0.1 pF, 200 V, ATC
0402, 15 pF, ±5%, 200 V, ATC
0505, 100 pF, ±10%, 200 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
N/A
0505, 2.7 pF, ±0.1 pF, 250 V, ATC
0603, 56 pF, ±5%, 250 V, ATC
0505, 100 pF, ±10%, 200 V, ATC
0805, 1000 pF, 100 V, 5%, AVX
1210, 1 µF, 100 V, 20%, ATC
100 µF, 160 V
9.1
Ω,
0805, 5%
0.33
Ω,
0805, 5%
0.33
Ω,
0805, 5%
0402HP, 3.3 nH
0402HP, 1.0 nH
0402HP, 4.7 nH
0402HP, 3.6 nH
MAGX-000035-05000P
GaN Wideband 50 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Lead-Free
3x6 mm 14-Lead DFN
†
Rev. V3
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
Gallium Nitride Devices and Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1B devices.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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