4. The exposed pad centered on the package bottom must be
connected to RF, DC, and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Electrical Specifications: T
A
= +25°C
Parameter
Forward Voltage
Reverse Leakage Current
Total Capacitance
5
Series Resistance
6
Parallel Resistance
6
Minority Carrier Lifetime
C.W. Thermal Resistance
( Infinite Heat Sink at Thermal
Ground Plane)
Power Dissipation
7,8
( Infinite Heat Sink at Thermal
Ground Plane)
Insertion Loss
Isolation
5.
6.
7.
8.
Rev. V1
Test Conditions
+50 mA D.C.
-200 V D.C.
-50 V @ 1 MHz
+10 mA @ 1 GHz
-Vdc = -40 V, @ 100 MHz
+If = 10 mA / -Ir = -6 mA
(50% Control Voltage, 90% Output Voltage)
IHigh = 4 A, Ilow = 10 mA @ 10 kHz
Units
V
ηA
pF
Ω
KΩ
µS
Min.
0.7
—
—
—
—
—
Typ.
0.9
|- 20|
0.24
3.4
500
2.0
Max.
1.1
|-1000|
0.30
4.4
—
3.0
ºC/W
—
35
—
+If = 50 mA @ 1 GHz
F = 1 GHz, -Vdc = -10 V
F = 1 GHz, +Ibias = +10 mA
W
dB
dB
—
—
-0.05
-18.5
4.3
-16.5
Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ).
Rs and Rp are measured on an HP4291A Impedance Analyzer.
De-rate power dissipation linearly by -28.6 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+ 25ºC) -
∆P
= Pd (+ 25º) - (28.6 mV/ºC) (∆T).
PD =
∆Tj
/
Θ
or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.
Absolute Maximum Ratings
9,10
Parameter
D.C. Forward Voltage @
+250 mA
D.C. Forward Current
D.C. Reverse Voltage
Junction Temperature
11
Operating Temperature
Storage Temperature
Re-flow Temperature
Absolute Maximum
1.2 V
250 mA
|-200V|
+175°C
-65°C to +125°C
-65°C to +150°C
+260°C for 360 seconds
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 2 devices.
2
9. Exceeding any one or combination of these limits may cause
permanent damage to this device.
10. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
11. Operating at nominal conditions with T
J
≤
+140°C will ensure
MTTF > 1 x 10E6 hours.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
PCB Layout
500 - 5000 MHz Parts List
13
Part
C1
C2, C3
FB1
R1
L1
Value
62 pF
100 pF
470
Ω
@ 1 GHz
150
Ω
82 nH
Case Style
0402
0402
0402
0402
0402
Rev. V1
13. Max DC voltage with recommended components not to
exceed 100 V.
PCB Schematic
Assembly Recommendations
Devices may be soldered using standard
Pb60/Sn40, or RoHS compliant solders. Leads
are plated NiPdAuAg to ensure an optimum
solderable connection.
For recommended Sn/Pb and RoHS soldering
profile See Application Note
M538
on the MACOM
website.
Cleanliness and Storage
These devices should be handled and stored in a
clean environment. Ends of the device are
NiPdAuAg plated for greater solderability. Exposure
to high humidity (>80%) for extended periods may
cause the surface to oxidize. Caution should be
taken when storing devices for long periods.
General Handling
12. R1 is not needed when using the recommended ferrite FB1.
Device can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Typical 1 GHz Parametric Curves
Series Resistance vs. Forward Current
1000
0.35
Capacitance vs. Reverse Voltage
100
0.30
10
0.25
1
0.20
0.1
0.00
0.02
0.04
0.06
0.08
0.10
0.15
0
10
20
30
40
Forward Bias (A)
Reverse Bias (V)
Parallel Resistance vs. Reverse Voltage
100000
10000
1000
0
10
20
30
40
Reverse Bias (V)
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Typical RF Small Signal Performance Curves
Insertion Loss
0.00
0
Return Loss
-0.05
-10
0V
10 V
50 V
-0.10
-20
-0.15
0V
10 V
50 V
-30
-0.20
-40
-0.25
-50
0
2
4
6
8
0
2
4
6
8
Frequency (GHz)
Frequency (GHz)
Isolation
-10
-15
-20
-25
-30
10 mA
25 mA
50 mA
0
2
4
6
8
-35
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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