matched to 50 ohms on both the input and output. It
is designed for use as a power amplifier stage in
transmit chains and is ideally suited for 42 GHz
band point-to-point radios.
Each device is 100% RF tested to ensure
performance compliance. The part is fabricated
using an efficient pHEMT process.
Pin Configuration
1,2
Pin No.
Function
RF
IN
V
G
1
V
G
2
V
G
3
No Connection
No Connection
V
REFERENCE
V
DETECTOR
Pin No.
9
10
11
12
13
14
15
16
Paddle
Function
RF
OUT
V
D
3
V
D
2
V
D
1
No Connection
No Connection
No Connection
No Connection
Ground
1
Ordering Information
Part Number
MAAP-010512-000000
MAAP-010512-TR0200
MAAP-010512-TR0500
MAAP-010512-001SMB
Package
Bulk quantity
200 Piece Reel
500 Piece Reel
Sample Evaluation board
2
3
4
5
6
7
8
1. MACOM recommends connecting unused package pins to
ground.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
3. Adjust Vgs between –1.0 V and –0.1 V to achieve specified supply current. Typical current 1117 mA = 217 (ID1) + 300 (ID2) + 600 (ID3)
Absolute Maximum Ratings
4,5,6
Parameter
Drain Voltage
Gate Bias Voltage
Input Power
Junction Temperature
7
Operating Temperature
Storage Temperature
Absolute Max.
+4.3 V
-1.5 V < Vg < 0 V
15 dBm
150°C
-40°C to +85°C
-55°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Human Body Model Class 1A devices.
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
6. Operating at nominal conditions with TJ ≤ 150°C will ensure
MTTF > 1 x 10
6
hours.
7. Junction Temperature (T
J
) = T
C
+
Өjc
* (V * I)
Typical thermal resistance (Өjc) = 11.2° C/W.
a) For T
C
= 25°C,
T
J
= 75°C @ 4 V, 1117 mA
b) For T
C
= 85°C,
T
J
= 135°C @ 4 V, 1117 mA
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-010512
Amplifier, Power, 0.8 W
40.5 - 43.5 GHz
Rev. V3
App Note [1] Biasing -
It is recommended to bias the amplifier with Vd=4.0 V and Id=1117 mA. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.3 V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement -
Each DC pin (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (10 nF/1 µF) as close to the package as possible.
App Note [3] Power Detector -
As shown in the schematic below, the power detector is implemented by
providing +5 V bias and measuring the difference in output voltage with standard op-amp in a differential
mode configuration.
Recommended Board Layout
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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