AN588
APPLICATION NOTE
CHOOSING AN
ITAxx REQUIRES A SYSTEM APPROACH
INTRODUCTION
Destined for the protection of data transmission lines, each one of these components corresponds to a
particular application.
Therefore, one no longer chooses an ITAxx - type protection as he did a Transil diode. In order to accu-
rately select the correct component, one must take into account the entire system and analyse the follow-
ing points:
– Against what type of disturbances do we want protection?
– What Transil array configuration do we need (number of I/O, voltage of the line signal)?
– What type of interface circuit are we protecting, and what are the destruction limits?
Once this step is done, the only thing left to do is to define the adapted Transil array. To help the user, a
detailed description of the characteristics and the functioning mode of the ITAxx arrays is required.
The protection level of the ITAxx
The protection of electronic and computer systems against ESD and EOS disturbances is regulated by
numerous standards, such as IEC801-xxx, Mil Standard, etc. Within one standard, the protection levels
change in function of the application.
Figure 1.
REV. 2
June 2004
1/12
AN588 APPLICATION NOTE
STMicroelectronics’ objective in developing this range of Transil arrays (ITAxxx) was to propose solutions
that correspond exactly to these demands (see Annex 2: Protection Standards Applicable to Computer
and Electronic Systems). These components are designed in order to protect against over-voltages result-
ing from ESD or EOS that disturb data transmission lines and for which the characteristics are stated be-
low:
– ESD discharges have very little energy. However, they are very rapid (5/30ns waves) and present very
high voltage peaks, around 15KV. The component must assure an efficient protection in dynamic
behavior. Low clamping voltage levels (V
CL
< 30V) must be maintained in the presence of very fast
transients with rise times such as 10A/ns. In this case, the performance of the protection device is not
linked to the silicon but to the structure of the connections and the track lay-out of the PC board.
– The EOS are longer over-voltages (1.2/50µs waves) with voltage peaks of 500V to 1KV. Because these
disturbances are powerful, the protection device must be able to dissipate the power in the silicon in
order to guarantee low clamping voltage levels.
ITAxx, a reliable protection against ESD
It has been shown that in the presence of ESD-type disturbances, standard protection devices (axial and
even SMD diodes) only guarantee a protection level of about a few hundred volts. We still find at the lead
level of the sensitive component to be protected the clamping voltage (V
CL
) to be 10 to 30V, and especially
an over-voltage created by the parasitic inductances (Ldi/dt) which can reach several hundreds of volts.
Figure 2 illustrates this behavior.
Figure 2. Protection Against ESD
CONVENTIONAL PROTECTION.
EQUIVALENT CIRCUIT IN DYNAMIC
BEHAVIOUR.
DEVICE
TO BE
PROTECTED
DEVICE
TO BE
PROTECTED
V
V CL
L
L
i
i
V = V
CL
+ 2 * L
di/dt
L : Parasitic inductance.
V
CL
: Clamping Voltage.
V : Residual overvoltage.
LINE
LINE
2/12
AN588 APPLICATION NOTE
Aware of this problem, the manufacturers of interface circuits have proposed components with auto-pro-
tected I/O’s up to 1 to 2kV. But in the case of long lines which are heavily exposed to disturbances, this
precaution is not enough and, therefore, requires the use of specific ESD protection devices.
The ITAxxB3 and ITAxxU3, which offer 8-transil functions in an SO20 package, have been especially de-
signed for this application. The internal wiring is based on a 4-point structure which allows the isolation of
the input from the output, guaranteeing a reliable protection with clamping voltages less than 30V. This
assures a real protection of the line interfaces.
In order to achieve such performance from these components, some recommendations about PCboard
mounting must be given.
Figure 3 shows what type of lay-out must be used in order to take advantage of the 4-point structure of
the ITAxxB3 and ITAxxU3. With this configuration, each data line passes through the protection device.
In this case, it acts as an interface between the cable and the circuit to be protected and guarantees an
isolation between its inputs and outputs.
The ESD wave is deviated across the input of the protection device. Therefore, the circuit to be protected
is no longer exposed to the Ldi/dt generated by the parasitic inductances of the wiring.
Figure 3. 4 - Points Structure (ITAxxB)
i
V
CL
The ITAxx, an efficient protection against EOS
Due to their monolithic structure which allows to optimize the active surface of the silicon, these products
have a dissipation capability equal to that of discrete components. These devices can be considered as
real protection against industrial disturbances (EOS) of the 1.2/50µsec type by guaranteeing clamping
voltages at high currents well under the maximum ratings of line interface circuits.
DE
VIC
PR E
O T TO
E C BE
TE
D
V
V = V
CL
V
CL
: Clamping Voltage.
V
: Residual Overvoltage.
3/12
AN588 APPLICATION NOTE
For example, these characteristics (V
CL
, I
PP
) are given for several part types in the table below:
I
PP
max
8/20µsec
40A
40A
40A
40A
VCL @ I
PP
8/20µsec
10V at 10A
12V at 10A
25V at 10A
31V at 10A
VCL @ I
PP
8/20µsec
12V at 25A
14V at 25A
28V at 25A
36V at 25A
Device
ITA6V1U3
ITA6V1M3
ITA18B1
ITA25B3
V
BR
6V1
6V1
18
25
Note that the maximum dissipation capability is equal to I
PP
= 40A @ 8/20µsec for all configurations no
matter what the voltage is.
The objective is to meet the protection standards concerning industrial disturbances applied to data trans-
mission lines, which require to withstand the same level of energy no matter the application. This is re-
flected in the standard IEC801-5.
The choice and use of the ITAxx
All of the ITAxxx monolithic arrays have been developed with the same basic concept of the integration of
uni-directional functions, for uni-directional as well as bi-directional products (see Annex 1: Product Range
- Configurations).
The uni-directional products
(ITAxxU series) are achieved with a network of common-anode Transil
which is similar to the discrete solution lay-out.
The bi-directional devices
(ITAxxB series) are created with a network of common-cathode Transil which
require special attention for their usage.
Figure 4 below explains the functional schematic diagram obtained with a bi-directional Transil array
(ITAxxB series).
Figure 4. The use of a Bi-Directional Transil Array (ITAxxB series)
Line 1
T01
T1
Line 2
OUT
Ligne 1
Ligne 2
IN
IN
T2
OUT
Line n
T1
T2
Tn
Tn
Ligne n
IN
OUT
T02
T01
T02
Wiring Principle.
Equivalent Function.
Basic Principle:
Connect two Transil to ground (T01 and T02).
This precaution doubles the current capability in relation to ground, thus allowing to support the maximum
ratings (I
PP
= 40A, 8/20µsec) on two wires at the same time. This guarantees a large safety margin, be-
cause when a disturbance occurs, it spreads out over all the wires.
4/12
AN588 APPLICATION NOTE
Choice of the break-down voltage (V
BR
) of the ITAxxB:
In the case of symmetrical signals (±V
LINE
), a
bi-directional Transil array with a break-down voltage (V
BR
) greater than the maximum differential voltage
between the 2 wires must be used.
Figure 5 helps to understand the break-down voltage (V
BR
) calculation:
V
BR
> 2 * V
L
.
Each line is protected in the common mode at a voltage equal to the V
BR
, and the line signals are not
clamped in the differential mode.
Figure 5. Calculation of the Breakdown Voltage (V
BR
)
Line 1
+/-V L
Vd
+/-V L
Line 2
Vd = V
BR
+ V
F
> ( +/- V
L
) + ( +/- V
L
)
VBR > 2 * VL
Examples of the use of bi-directional transil arrays
Maximum Line Signals
±5V
±9V
±12 V
An ITAxx assures protection, even after its destruction
When a disturbance occurs whose energy is greater than the dissipation capability of the component, the
destruction mode is a short-circuit.
This behavior, linked to the physical laws of silicon but also to an adequate wiring, assures constant pro-
tection, even after destruction. Additionally the line failure detection is immediate.
Use of transil arrays as an EMI filter
By using these transil arrays, the EMI filter function is offered "for free". The combination of the junction
capacitance (from 500 to 1000pF) with the parasitic inductances of the PC board tracks (L = 10nH/cm)
creates an EMI filter whose attenuation can satisfy applications with low exposure levels such as centron-
ics connection in printers (see Figure 6).
ITAxxB Solutions
ITA10Bx
ITA18Bx
ITA25Bx
5/12
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
