Preliminary
Datasheet
RJK2017DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.036
Ω
typ. (at I
D
= 22.5 A, V
GS
= 10 V, Ta = 25°C)
•
Low leakage current
•
High speed switching
R07DS0416EJ0300
(Previous: REJ03G1797-0200)
Rev.3.00
Jun 07, 2011
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
≤
10
μs,
duty cycle
≤
1%
Value at Tc = 25°C
STch = 25°C, Tch
≤
150°C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
Note4
I
D
I
D (pulse)
I
DR
Note3
I
AP
Note3
E
AR
Pch
Note2
θch-c
Tch
Tstg
Note1
Ratings
200
±30
45
135
45
12
9.6
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 1 of 6
RJK2017DPP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
200
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.036
4800
290
90
50
40
95
40
66
26
16
0.88
150
Max
—
1
±1
4
0.047
—
—
—
—
—
—
—
—
—
—
1.35
—
Unit
V
μA
μA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 200 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 22.5 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 22.5 A
V
GS
= 10 V
R
L
= 4.5
Ω
Rg = 10
Ω
V
DD
= 160 V
V
GS
= 10 V
I
D
= 45 A
I
F
= 45 A, V
GS
= 0
Note5
I
F
= 45 A, V
GS
= 0
di
F
/dt = 100 A/μs
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 2 of 6
RJK2017DPP
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
10
PW
=
10
Typical Output Characteristics
100
Drain Current I
D
(A)
I
D
(A)
100
μ
s
80
10 V
7V
6.5 V
Pulse Test
Ta = 25°C
6V
10
0
Drain Current
μ
s
60
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
40
5.5 V
20
0.1
5V
V
GS
= 4.5 V
4
8
12
16
20
0.01
0.1
1
10
100
1000
0
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
10
0.1
Tc = 75°C
1
25°C
−25°C
0.1
0
2
4
6
8
10
0.01
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.25
V
GS
= 10 V
Pulse Test
1000
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
0.20
0.15
22.5 A
0.10
I
D
= 45 A
12.5 A
100
0.05
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
1000
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 3 of 6
RJK2017DPP
Typical Capacitance vs.
Drain to Source Voltage
10000
Preliminary
Dynamic Input Characteristics (Typical)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
400
I
D
= 45 A
Ta = 25°C
V
DD
= 50 V
100 V
160 V
V
GS
16
Ciss
Capacitance C (pF)
300
12
1000
Coss
100
V
GS
= 0
f = 1 MHz
Ta = 25°C
10
0
20
40
60
80
Crss
200 V
DS
8
100
V
DD
= 160 V
100 V
50 V
20
40
60
80
4
100
0
0
100
Drain to Source Voltage
V
DS
(V)
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
V
DS
= 10 V
Reverse Drain Current I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
GS
= 0 V
Ta = 25°C
80 Pulse Test
4
I
D
= 10 mA
3
1 mA
60
40
20
2
0.1 mA
1
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 4 of 6
RJK2017DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.03
0.01
0.02
0.01
1s
h
p
ot
uls
Preliminary
Tc = 25°C
e
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
100
μ
1m
10 m
100 m
1
10
D=
PW
T
0.003
0.001
10
μ
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 100 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0416EJ0300 Rev.3.00
Jun 07, 2011
Page 5 of 6
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