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MURB1060CT

产品描述Rectifier Diode,
产品类别分立半导体    二极管   
文件大小246KB,共5页
制造商扬杰科技(YANGJIE)
官网地址http://www.21yangjie.com/
标准
扬州扬杰电子科技股份有限公司成立于2006年8月2日,注册资本4.72亿元人民币。2014年1月,公司在深交所创业板挂牌上市,股票代码300373。2017年营业收入14.7亿元。 公司集研发、生产、销售于一体,专业致力于功率半导体芯片及器件制造、集成电路封装测试等领域的产业发展。公司主营产品为各类电力电子器件芯片、功率二极管、整流桥、大功率模块、DFN/QFN产品、SGT MOS及碳化硅SBD、碳化硅JBS等,产品广泛应用于消费类电子、安防、工控、汽车电子、新能源等诸多领域。
下载文档 详细参数 全文预览

MURB1060CT概述

Rectifier Diode,

MURB1060CT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称扬杰科技(YANGJIE)
Reach Compliance Codeunknown

MURB1060CT文档预览

MURB1060CT 
 
RoHS
COMPLIANT
Ultra-Fast Recovery Diodes 5A*2 FRED Pt
Features
● Adopt FRED chip
● Low forward Voltage drop
● Fast reverse recovery time
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
Package:
TO-263
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:
As marked
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Rectified Output Current
@60Hz sine wave, R-load, Tc(FIG.1)
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave, 1 cycle, Ta=25℃
Current Squared Time @1ms≤t≤8.3ms
Tj=25℃,
Storage Temperature
Junction Temperature
Junction capacitance @4V,1MHz
V
RRM
I
O
I
FSM
I
2
t
Tstg
Tj
Cj
V
A
A
A
2
s
pF
SYMBOL UNIT
MURB1060CT
MURB1060CT
600
10
50
10
-55 ~ +150
-55 ~ +150
20
1/5
S-B1014
Rev.1.3,27-July-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MURB1060CT 
 
■Electrical
Characteristics
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
I
FM
=5.0A @Tj=25℃
Instantaneous forward voltage drop per diode
V
FM
V
I
FM
=5.0A @Tj=150℃
DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
I
RRM2
Trr
ns
V
RM
=V
RRM
Tj=25℃
V
RM
=V
RRM
Tj=150℃
I
F
=0.5A I
RM
=1A
I
RR
=0.25A Tj=25℃
Tj=25℃
Peak recovery current
I
RRM
A
Tj=125℃
Tj=25℃
Reverse recovery charge
Qrr
nC
Tj=125℃
-
280
-
IF=5A
di/dt=-200A/us
V
RM
=200V
-
-
5.07
78.88
-
-
-
-
-
-
1.15
-
35
25
3.06
1.3
10
200
35
-
Min
-
Typ
1.45
Max
1.6
Reverse Recovery Time
Thermal Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
Thermal Resistance
Thermal Resistance
Between junction and case
Between junction and Air
SYMBOL
RθJ-C
RθJ-A
UNIT
℃/W
℃/W
MURB1060CT
2.0
50
Ordering Information
(Example)
PREFERED P/N
MURB1060CT
MURB1060CT
UNIT WEIGHT(g)
Approximate 1.43
Approximate 1.43
MINIIMUM
PACKAGE(pcs)
50
1000
INNER BOX
QUANTITY(pcs)
2000
2000
OUTER CARTON
QUANTITY(pcs)
8000
10000
DELIVERY MODE
Tube
Reel
Characteristics
(Typical)
FIG1:Io -Tc Curve
Average Forward Output Current (A)
Peak Forward Surge Current (A)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
0
50
100
150
200
TC measure point
70
60
50
40
30
20
10
1
2
5
10
20
50
100
FIG2:Surge Forward Current Capability
8.3ms Single
Half Sine-Wave
JEDEC Method
Case Temperature
(℃)
Number of Cycles
2/5
S-B1014
Rev.1.3,27-July-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MURB1060CT 
 
40
FIG3: Forward Voltage
Instantaneous Forward Current (A)
FIG .4: Instantaneous Reverse Characteristics
100
20
10
5.0
Tj=25
2.0
1.0
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj=100℃
Tj=125℃
Tj=150℃
Instantaneous Reverse Current (uA)
10
Tj=150
Tj=125
1.0
Tj=100
0.1
Tj=25
0.01
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak R everse Voltage (% )
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
trr
+0.5A
(-)
(+)
(-)
1
Ω
NONINDUCTIVE
DUT
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE1)
0
-0.25A
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1M
Ω
22pf
2.Rise Time=10ns max.Sourse Impedance=50
Ω
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
3/5
S-B1014
Rev.1.3,27-July-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MURB1060CT 
 
■Outline
Dimensions
TO-263
A
G
H
Dim
A
B
C
TO-263
Min
9.85
9.7
8.4
0.28
0.68
4.86
4.28
1.14
0
4.90
Max
10.45
10.5
9.0
0.64
0.94
5.26
4.88
1.4
0.2
5.40
B
C
I
E
F
Dimensions in millimeters
D
E
F
G
J
D
H
I
J
4/5
S-B1014
Rev.1.3,27-July-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MURB1060CT 
 
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http://
www.21yangjie.com
, or consult your nearest Yangjie’s sales office for further assistance.
5/5
S-B1014
Rev.1.3,27-July-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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