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IDT7200L12TD

产品描述FIFO, 256X9, 12ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28
产品类别存储    存储   
文件大小202KB,共14页
制造商IDT (Integrated Device Technology)
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IDT7200L12TD概述

FIFO, 256X9, 12ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28

IDT7200L12TD规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DIP
包装说明CERAMIC, DIP-28
针数28
Reach Compliance Code_compli
ECCN代码EAR99
最长访问时间12 ns
其他特性RETRANSMIT
最大时钟频率 (fCLK)50 MHz
周期时间20 ns
JESD-30 代码R-GDIP-T28
JESD-609代码e0
长度37.1475 mm
内存密度2304 bi
内存集成电路类型OTHER FIFO
内存宽度9
功能数量1
端子数量28
字数256 words
字数代码256
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256X9
输出特性3-STATE
可输出NO
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装等效代码DIP28,.3
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度5.08 mm
最大待机电流0.005 A
最大压摆率0.08 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm
Base Number Matches1

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CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9, 1,024 x 9
IDT7200L
IDT7201LA
IDT7202LA
FEATURES:
First-In/First-Out dual-port memory
256 x 9 organization (IDT7200)
512 x 9 organization (IDT7201)
1,024 x 9 organization (IDT7202)
Low power consumption
— Active: 440mW (max.)
—Power-down: 28mW (max.)
Ultra high speed—12ns access time
Asynchronous and simultaneous read and write
Fully expandable by both word depth and/or bit width
Pin and functionally compatible with 720X family
Status Flags: Empty, Half-Full, Full
Auto-retransmit capability
High-performance CEMOS™ technology
Military product compliant to MIL-STD-883, Class B
Standard Military Drawing #5962-87531, 5962-89666, 5962-89863
and 5962-89536 are listed on this function
Dual versions available in the TSSOP package. For more informa-
tion, see IDT7280/7281/7282 data sheet
IDT7280 = 2 x IDT7200
IDT7281 = 2 x IDT7201
IDT7282 = 2 x IDT7202
Industrial temperature range (–40
o
C to +85
o
C) is available
(plastic packages only)
DESCRIPTION:
The IDT7200/7201/7202 are dual-port memories that load and empty
data on a first-in/first-out basis. The devices use Full and Empty flags to prevent
data overflow and underflow and expansion logic to allow for unlimited
expansion capability in both word size and depth.
The reads and writes are internally sequential through the use of ring
pointers, with no address information required to load and unload data. Data
is toggled in and out of the devices through the use of the Write (W) and Read
(R) pins.
The devices utilize a 9-bit wide data array to allow for control and parity bits
at the user’s option. This feature is especially useful in data communications
applications where it is necessary to use a parity bit for transmission/reception
error checking. It also features a Retransmit (RT) capability that allows for reset
of the read pointer to its initial position when
RT
is pulsed LOW to allow for
retransmission from the beginning of data. A Half-Full Flag is available in the
single device mode and width expansion modes.
These FIFOs are fabricated using IDT’s high-speed CMOS technology.
They are designed for those applications requiring asynchronous and
simultaneous read/writes in multiprocessing and rate buffer applications.
Military grade product is manufactured in compliance with the latest revision of
MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(D
0
-D
8
)
W
WRITE
CONTROL
WRITE
POINTER
RAM
ARRAY
256 x 9
512 x 9
1,024 x 9
READ
POINTER
R
READ
CONTROL
THREE-
STATE
BUFFERS
DATA OUTPUTS
(Q
0
-Q
8
)
RS
RESET
LOGIC
FL/RT
FLAG
LOGIC
EXPANSION
LOGIC
EF
FF
XI
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
XO/HF
2679 drw 01
COMMERCIAL, INDUSTRIAL AND MILITARY TEMPERATURE RANGES
1
©
2001
Integrated Device Technology, Inc.
MAY 2001
DSC-2679/8
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