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Datasheet> 器件分类 > 分立半导体> 晶体管> MJE13005L-T60-K
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MJE13005L-T60-K

产品描述Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3
产品类别分立半导体    晶体管   
文件大小408KB，共8页
制造商UNISONIC TECHNOLOGIES CO.,LTD
官网地址http://www.unisonic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

MJE13005L-T60-K概述

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3

MJE13005L-T60-K规格参数

参数名称属性值
是否Rohs认证符合
厂商名称UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码SIP
包装说明LEAD FREE PACKAGE-3
针数3
Reach Compliance Codecompliant
最大集电极电流 (IC)4 A
集电极-发射极最大电压400 V
配置SINGLE
最小直流电流增益 (hFE)8
JEDEC-95代码TO-126
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度（摄氏度）NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)4 MHz

MJE13005L-T60-K文档预览

UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
1
TO-126
1
NPN SILICON TRANSISTOR
TO-263
FEATURES
* V
CEO(SUS)
= 400 V
* Reverse bias SOA with inductive loads @ T
C
= 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
. . . tc @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
1
TO-220
1
TO-220F
*Pb-free plating product number: MJE13005L
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
MJE13005-T60-K
MJE13005L-T60-K
MJE13005-TA3-T
MJE13005L-TA3-T
MJE13005-TF3-T
MJE13005L-TF3-T
MJE13005-TQ3-R
MJE13005L-TQ3-R
MJE13005-TQ3-T
MJE13005L-TQ3-T
Package
TO-126
TO-220
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Bulk
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 8
QW-R203-018,F
MJE13005
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
Ic
I
CM
I
B
I
BM
I
E
I
EM
NPN SILICON TRANSISTOR
RATINGS
400
700
9
4
8
2
4
6
UNIT
V
V
V
A
A
A
A
A
12
A
Total Power Dissipation at Ta=25°С
2
W
P
D
Derate above 25°С
16
mW/°С
75
W
Total Power Dissipation at T
C
=25°С
P
D
Derate above 25°С
600
mW/°С
Operating and Storage Junction Temperature Range
T
J
, T
STG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
SYMBOL
θ
JA
θ
JC
MAX
62.5
1.67
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS
(Tc=25°С, unless otherwise specified)
PARAMETER
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN
400
1
mA
5
1
mA
TYP
MAX
UNIT
V
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
*ON CHARACTERISTICS (1)
DC Current Gain
V
CEO(SUS)
Ic=10mA , I
B
=0
V
CBO
=Rated Value, V
BE(OFF)
=1.5 V
I
CBO
V
CBO
=Rated Value, V
BE(OFF)
=1.5V,
Tc=100°С
I
EBO
V
EB
=9V, Ic=0
Is/b
RBSOA
h
FE1
h
FE2
Ic=1A, V
CE
=5V
Ic=2A, V
CE
=5V
Ic=1A, I
B
=0.2A
Ic=2A, I
B
=0.5A
Ic=4A, I
B
=1A
Ic=2A, I
B
=0.5A, Ta=100°С
Ic=1A, I
B
=0.2A
Ic=2A, I
B
=0.5A
Ic=2A, I
B
=0.5A, Tc=100°С
See Figure 11
See Figure 12
10
8
60
40
0.5
0.6
1
1
1.2
1.6
1.5
4
65
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
V
V
V
V
V
V
MHz
pF
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
V
BE (SAT)
f
T
Cob
Ic=500mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R203-018,F
MJE13005
ELECTRICAL CHARACTERISTICS (Cont.)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
t
D
Rise Time
t
R
Vcc=125V, Ic=2A, I
B1
=I
B2
=0.4A,
t
P
=25μs, Duty Cycle≤1%
Storage Time
t
S
Fall Time
t
F
* Pulse Test: Pulse Width=300μs, Duty Cycle≤2%
MIN
TYP
MAX
UNIT
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
Table 1.Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
1N4933
0.001µF
33
MJE210
L
MR826*
V
*SEL
V
C
V
cc
RESISTIVE
SWITHCING
TEST CIRCUITS
5V
P
w
DUTY CYCLE? 10%
t
r
, t
f
? 10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02µF 270
1k
2N2905
47
1/2W
100
-V
BE
(off)
MJE200
R
B
I
B
T.U.T.
I
c
5.1k
51
+125V
R
c
R
B
D1
-4.0V
TUT
SCOPE
NOTE
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Coil Data :
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
GAP for 200μH/20 A
Lcoil=200μH
Vcc=20V
V
clamp
=300V
Vcc=125V
Rc=62Ω
D1=1n5820 or
Equiv.
R
B
=22Ω
CIRCUIT
VALUES
OUTPUT WAVEFORMS
TEST WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R203-018,F
MJE13005
RESISTIVE SWITCHING PERFORMANCE
NPN SILICON TRANSISTOR
Time, t (°С)
Transient Thermal Resistance, r(t)
(Normalized)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C(pk)
(A)
Collector Current, I
C
(A)
Time, t (°С)
4 of 8
QW-R203-018,F
MJE13005
RESISTIVE SWITCHING PERFORMANCE
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R203-018,F
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MJE13005L-T60-K相似产品对比

MJE13005L-T60-K MJE13005L-TQ3-T MJE13005-TQ3-T MJE13005-TQ3-R MJE13005-T60-K MJE13005L-TQ3-R
描述 Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3 Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, LEAD FREE, TO-263, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, TO-263, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, TO-263, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, LEAD FREE, TO-263, 3 PIN
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码 SIP D2PAK D2PAK D2PAK SIP D2PAK
包装说明 LEAD FREE PACKAGE-3 LEAD FREE, TO-263, 3 PIN TO-263, 3 PIN TO-263, 3 PIN TO-126, 3 PIN LEAD FREE, TO-263, 3 PIN
针数 3 4 4 4 3 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant
最大集电极电流 (IC) 4 A 4 A 4 A 4 A 4 A 4 A
集电极-发射极最大电压 400 V 400 V 400 V 400 V 400 V 400 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 8 8 8 8 8 8
JEDEC-95代码 TO-126 TO-263AB TO-263AB TO-263AB TO-126 TO-263AB
JESD-30 代码 R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
元件数量 1 1 1 1 1 1
端子数量 3 2 2 2 3 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO YES YES YES NO YES
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 4 MHz 4 MHz 4 MHz 4 MHz 4 MHz 4 MHz

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