TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
2
3
I
2
PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
I
2
PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
Instantaneous forward
voltage per diode (Note1)
I
F
= 5A
I
F
= 5A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
R
θJC
T
J
T
STG
0.62
0.55
-
-
MAX
0.70
0.63
100
15
TYP
0.69
0.58
-
-
TSI10H
100CW
100
TSI10H
120CW
120
10
5
100
10000
MAX
0.79
0.66
100
15
3.2
- 55 to +150
- 55 to +150
TYP
0.78
0.64
-
1.5
MAX
0.88
0.72
100
10
TYP
0.81
0.67
-
1.5
MAX
0.91
0.75
100
10
V
μA
mA
°C/W
°C
°C
TSI10H
150CW
150
TSI10H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
ORDER INFORMATION (EXAMPLE)
TSI10H150CW C0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSI10H100CW
AVERAGE FORWARD CURRENT (A)
10
T
J
=150
o
C
1
T
J
=125
o
C
T
J
=100
o
C
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0.1
T
J
=25
o
C
0
0
25
50
75
100
125
150
CASE TEMPERATURE (
o
C)
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSI10H120CW
TSI10H150CW
10
T
J
=150
o
C
10
T
J
=150
o
C
1
T
J
=125
o
C
1
T
J
=125
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
0.01
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
100
TSI10H200CW
INSTANTANEOUS FORWARD CURRENT
(A)
INSTANTANEOUS REVERSE CURRENT
(mA)
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
TSI10H100CW
10
T
J
=150
o
C
1
0.1
0.01
0.001
T
J
=125
o
C
T
J
=100
o
C
10
T
J
=150
o
C
1
T
J
=125
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
T
J
=25
o
C
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100
TSI10H120CW
10
1
0.1
0.01
0.001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TSI10H150CW
10
1
0.1
0.01
0.001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
T
J
=25
o
C
T
J
=25
o
C
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 10 TYPICAL JUNCTION CAPACITANCE
10000
TSI10H200C
10
JUNCTION CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
TSI10H100C
TSI10H120C
1000
1
T
J
=150
o
C
0.1
0.01
0.001
0.0001
T
J
=25
o
C
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
=125
o
C
T
J
=100
o
C
100
TSI10H150C
TSI10H200C
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
2
I PAK
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
-
1.14
2.80
0.68
2.41
9.07
7.79
4.40
1.14
2.20
0.35
0.95
Max
10.50
1.40
4.20
0.94
2.67
9.47
9.35
4.70
1.40
2.80
0.64
1.45
Unit (inch)
Min
-
0.045
0.110
0.027
0.095
0.357
0.307
0.173
0.045
0.087
0.014
0.037
Max
0.413
0.055
0.165
0.037
0.105
0.373
0.368
0.185
0.055
0.110
0.025
0.057
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D0000003
Version: A15
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_D0000003
Version: A15
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