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1N5817_15

产品描述Schottky Barrier Plastic Rectifier
文件大小73KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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1N5817_15概述

Schottky Barrier Plastic Rectifier

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1N5817, 1N5818, 1N5819
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
1.0 A
20 V, 30 V, 40 V
25 A
0.45 V, 0.55 V, 0.60 V
125 °C
DO-204AL
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at T
L
= 90 °C
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
1N5817
20
14
20
24
1N5818
30
21
30
36
1.0
25
10 000
- 65 to + 125
1N5819
40
28
40
48
UNIT
V
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
Maximum average reverse current
at rated DC blocking voltage
Typical junction capacitance
TEST CONDITIONS
1.0
3.1
T
A
= 25 °C
T
A
= 100 °C
4.0 V, 1.0 MHz
SYMBOL
V
F (1)
V
F (1)
I
R (1)
C
J
125
1N5817
0.450
0.750
1N5818
0.550
0.875
1.0
10
110
1N5819
0.600
0.900
UNIT
V
V
mA
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 13-Aug-13
Document Number: 88525
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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