Zowie Technology Corporation
1N4148GH
Silicon Epitaxial Planar Switching Diode
Lead free product
Halogen-free type
Max. 0.5
Max. 1.9
Min. 27.5
Applications
• High-speed switching
Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
• High conductance
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1
μs
Symbol
V
RM
V
R
I
F(AV)
I
FSM
P
tot
T
j
T
stg
Value
100
75
200
0.5
1
4
1)
500
200
- 65 to + 200
Unit
V
V
mA
A
mW
O
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
C
C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
REV.
0
Zowie Technology Corporation
Zowie Technology Corporation
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
at I
R
= 5 µA
Capacitance
at V
R
= 0, f = 1 MHz
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
1)
Symbol
V
F
Min.
-
Max.
1
Unit
V
I
R
I
R
I
R
V
(BR)R
V
(BR)R
C
tot
V
fr
t
rr
R
thA
η
V
-
-
-
100
75
-
25
5
50
-
-
4
nA
µA
µA
V
V
pF
-
-
-
0.45
2.5
4
0.35
1)
-
V
ns
K/mW
-
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
V
RF
=2V
2nF
60
5K
~
~
~
Rectification Efficiency Measurement Circuit
Vo
REV.
0
Zowie Technology Corporation
Zowie Technology Corporation
Forward characteristics
mA
10
3
Dynamic forward resistance
versus forward current
1N 4148GH
1N 4148GH
Tj=25
o
C
f=1KHz
10
4
5
2
10
2
i
F
10
o
Tj=100 C
o
Tj=25 C
10
3
r
f
5
2
10
2
1
5
2
10
-1
10
5
2
10
-2
0
1
V
F
2V
1
10
-2
10
-1
1
10
I
F
10
2
mA
Admissible power dissipation
versus ambient temperature
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
Relative capacitance
versus reverse voltage
mW
1000
900
800
700
600
500
400
300
200
100
0
0
100
1N 4148GH
1N 4148GH
Tj=25
o
C
f=1MHz
1.1
C
tot
(V
R
)
C
tot
(0V)
1.0
P
tot
0.9
0.8
0.7
200
o
C
T
amb
0
0
2
4
6
V
R
8
10 V
REV.
0
Zowie Technology Corporation
Zowie Technology Corporation
Leakage current
versus junction temperature
nA
10
4
5
2
1N 4148GH
10
3
I
R
5
2
10
2
5
2
10
5
V
R
=20V
2
1
0
100
T
j
200 C
o
Admissible repetitive peak forward current
versus pulse duration
A
100
5
4
3
2
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
1N 4148GH
I
v=tp/T
T=1/fp
I
FRM
tp
10
I
FRM
v=0
5
4
3
2
t
T
0.1
0.2
0.5
1
5
4
3
2
0.1
10
-5
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
5
10
-1
2
5
1
2
5
10 s
t
p
REV.
0
Zowie Technology Corporation
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
