INCHANGE Semiconductor
Schottky Barrier Rectifier
MBRS1035
FEATURES
·Schottky
barrier chip
·Low
Power Loss/High Efficiency
·High
Operating Junction Temperature
·Low
Forward Voltage
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For
use in high frequency rectifier of switching mode
Power supplies, freewheeling diodes, DC-to-DC converters
Or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
RRM
V
RWM
V
R
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
35
V
I
F(AV)
Average Rectified Forward Current
10
A
I
FSM
Non-repetitive Peak Surge Current
8.3 ms Single Half Sine-wave Superimposed
on Rated Load
Junction Temperature
120
A
T
J
-65~175
℃
T
stg
Storage Temperature Range
-65~175
℃
isc website
：
www.isc.com
1
isc & iscsemi
is registered trademark
INCHANGE Semiconductor
Schottky Barrier Rectifier
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MBRS1035
MAX
2.0
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
I
F
= 10A ; Tj=125
℃
V
F
Maximum
Voltage
Instantaneous
Forward
I
F
= 20A ; Tj=25
℃
I
F
= 20A ; Tj=125
℃
I
R
Maximum
Current
Instantaneous
Reverse
V
R
= V
RWM,
Tj= 25
℃
V
R
= V
RWM,
Tj= 125
℃
TYP
MAX
0.57
0.84
0.72
100
15
μA
mA
V
UNIT
isc website
：
www.iscsemi.com
2
isc & iscsemi
is registered trademark
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