RU6H1L
N-Channel Advanced Power MOSFET
Features
•600V/1.2A,
R
DS (ON)
=
10Ω
(Typ.)
@
V
GS
=10V
•
Gate charge minimized
•
Low Crss( Typ. 4pF)
• Extremely high dv/dt capability
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-252
Applications
•
High efficiency switch mode power
supplies
•
Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
Rating
600
±30
150
-55 to 150
1.2
①
②
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
I
D
Continuous Drain Current
4.8
A
A
1.2
0.78
31
13
4.0
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
1.5
mJ
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
www.ruichips.com
RU6H1L
Electrical Characteristics
Symbol
Parameter
(T
C
=25°C Unless Otherwise Noted)
RU6H1L
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
V
GS
=0V, I
DS
=250µA
V
DS
=600V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
DS
=0.6A
600
1
30
2
3
4
±100
10
11.5
V
µA
V
nA
Ω
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=1.2A, V
GS
=0V
I
SD
=1.2A, dl
SD
/dt=100A/µs
195
0.55
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=300V,
Frequency=1.0MHz
10
135
23
4
7
V
DD
=300V, R
L
=250Ω,
I
DS
=1.2A, V
GEN
=10V,
R
G
=25Ω
20
15
30
1.4
V
ns
µC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Pulse
width limited by safe operating area.
②Current
limited by maximum junction temperature.
③Limited
by T
Jmax
, I
AS
=1.75A, V
DD
= 100V, R
G
= 50Ω , Starting T
J
= 25°C.
④Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
⑤Guaranteed
by design, not subject to production testing.
5.5
V
DS
=480V, V
GS
= 10V,
I
DS
=1.2A
0.7
2.7
nC
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
2
www.ruichips.com
RU6H1L
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
I
D
- Drain Current (A)
RU6H1L
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (Ω)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
4
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
www.ruichips.com
R
DS(ON)
- On - Resistance (Ω)
RU6H1L
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Capacitance
Gate Charge
V
DS
- Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
5
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
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