RU20T8M7
N-Channel Advanced Power MOSFET
Features
• 20V/8A,
R
DS (ON)
=13mΩ(Typ.)@V
GS
=4.5V
R
DS (ON)
=14mΩ(Typ.)@V
GS
=4V
R
DS (ON)
=16mΩ(Typ.)@V
GS
=3.1V
R
DS (ON)
=18mΩ(Typ.)@V
GS
=2.5V
Pin Description
G2
S2
S2
D1/D2
• Super High Dense Cell Design
• Fast Switching Speed
• ESD Protected
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
PIN1
G1
S1
S1
PIN1
SDFN2050
Applications
• DC-DC Converters
• Power Management
D1
G1
G2
D2
S1
S2
Dual N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
20
V
±10
150
-55 to 150
28
°C
°C
A
Mounted on Large Heat Sink
I
DP
①
300μs Pulse Drain Current Tested
Continuous Drain Current@T
C
(V
GS
=4.5V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
60
28
18
A
I
D
②
A
8
6.4
25
10
W
1.7
1.1
Continuous Drain Current@T
A
(V
GS
=4.5V)
③
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
Maximum Power Dissipation@T
C
P
D
Maximum Power Dissipation@T
A
③
T
A
=25°C
T
A
=70°C
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
www.ruichips.com
RU20T8M7
Symbol
R
θJC
R
θJA
③
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Rating
5
75
Unit
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
TBD
mJ
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RU20T8M7
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
DS
=20V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=8A
R
DS(ON)
⑤
Parameter
Test Condition
Min.
Typ.
Max.
Unit
20
24
1
30
V
µA
V
µA
mΩ
mΩ
mΩ
mΩ
0.5
1.5
±10
13
14
16
18
15
16
18
20
Drain-Source On-state Resistance
V
GS
=4V, I
DS
=7A
V
GS
=3.1V, I
DS
=6A
V
GS
=2.5V, I
DS
=5A
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=8A, V
GS
=0V
I
SD
=8A, dl
SD
/dt=100A/µs
25
13
1.2
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
1.5
1150
180
140
5
Ω
pF
V
DD
=10V,I
DS
=8A,
V
GEN
=4.5V,R
G
=2.5Ω
13
34
17
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=16V, V
GS
=4.5V,
I
DS
=8A
13
1.2
3.9
nC
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
2
www.ruichips.com
RU20T8M7
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature.
③When
mounted on 1 inch square copper board, t≤10sec.
④Limited
by T
Jmax
, V
DD
= 16V, R
G
= 50Ω, Starting T
J
= 25°C.
⑤Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed
by design, not subject to production testing.
Ordering and Marking Information
Device
RU20T8M7
Marking
RU20T8M7
Package
SDFN2050
Packaging Quantity Reel Size Tape width
Tape&Reel
2500
7''
12mm
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
3
www.ruichips.com
RU20T8M7
Typical Characteristics
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Power Dissipation
30
25
20
15
10
5
Drain Current
P
D
- Power (W)
I
D
- Drain Current (A)
VGS=4.5V
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
Safe Operation Area
100
Drain Current
50
Ids=8A
40
I
D
- Drain Current (A)
R
DS(ON)
limited
10
1
DC
10µs
100µs
1ms
10ms
30
20
0.1
10
0.01
T
C
=25°C
0.01
0.1
1
10
100
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
10
1
0.1
Single Pulse
R
θJC
=
5°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
4
www.ruichips.com
RU20T8M7
Typical Characteristics
150
Output Characteristics
30
Drain-Source On Resistance
I
D
- Drain Current (A)
4.5V
3.1V
90
R
DS(ON)
- On Resistance (mΩ)
4V
120
25
2.5V
20
3.1V
4V
15
10
60
2.5V
4.5V
5
0
0
2
4
6
8
10
30
1V
0
0
1
2
3
4
5
V
DS
- Drain-Source Voltage (V)
2.5
I
D
- Drain Current (A)
100
Drain-Source On Resistance
V
GS
=4.5V
I
D
=8A
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
2.0
10
1.5
T
J
=150°C
1
1.0
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=13mΩ
0.0
-50
-25
0
25
50
75
100
125
150
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
Capacitance
V
GS
- Gate-Source Voltage (V)
1500
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
VDS=16V
IDS=8A
C - Capacitance (pF)
Frequency=1.0MHz
1200
900
Ciss
600
300
Coss
Crss
1
10
100
0
V
DS
- Drain-Source Voltage (V)
5
10
15
Q
G
- Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
www.ruichips.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
