RU1H130Q
N-Channel Advanced Power MOSFET
Features
•100V/130A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
Pin Description
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO247
Applications
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
D
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
100
V
±25
175
-55 to 175
130
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
①
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
520
130
A
A
②
92
312
W
156
0.48
50
°C/W
°C/W
P
D
R
θJC
R
θJA
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
③
Avalanche Energy, Single Pulsed
552
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
1
www.ruichips.com
RU1H130Q
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RU1H130Q
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
DS
=100V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
100
1
30
2
4
±100
7
9
V
µA
V
nA
mΩ
Drain-Source On-state Resistance V
GS
=10V, I
DS
=65A
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=65A, V
GS
=0V
I
SD
=65A,
dl
SD
/dt=100A/µs
42
64
1.2
V
ns
µC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=50V,
Frequency=1.0MHz
1
6800
630
350
22
Ω
pF
V
DD
=50V, R
L
=1Ω,
I
DS
=65A, V
GEN
=10V,
R
G
=5Ω
86
72
66
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=80V, V
GS
=10V,
I
DS
=65A
130
32
55
nC
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature. Package
limitation current is 90A.
③Limited
by T
Jmax
, I
AS
=47A, V
DD
= 48V, R
G
= 50Ω , Starting T
J
= 25°C.
④Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed
by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
2
www.ruichips.com
RU1H130Q
Ordering and Marking Information
Device
RU1H130Q
Marking
RU1H130Q
Package
TO247
Packaging Quantity Reel Size Tape width
Tube
30
-
-
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
3
www.ruichips.com
RU1H130Q
Typical Characteristics
350
300
Power Dissipation
140
120
Drain Current
P
D
- Power (W)
250
200
150
100
50
0
0
25
50
75
100
125
150
175
I
D
- Drain Current (A)
100
80
60
40
20
VGS=10V
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
1,000.00
Safe Operation Area
R
DS(ON)
limited
Drain Current
25
Ids=65A
20
I
D
- Drain Current (A)
100.00
10µs
100µs
1ms
10ms
DC
15
10
10.00
5
1.00
0.1
1
T
C
=25°C
10
100
1000
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
R
θJC
=
0.48°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
4
www.ruichips.com
RU1H130Q
Typical Characteristics
60
Output Characteristics
15
Drain-Source On Resistance
50
40
30
20
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
V
GS
=7,8,10V
12
10V
9
5V
6
3V
10
0
0
1
2
3
4
5
3
0
0
20
40
60
80
100
120
V
DS
- Drain-Source Voltage (V)
2.5
I
D
- Drain Current (A)
100
Drain-Source On Resistance
V
GS
=10V
I
D
=65A
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
2.0
T
J
=175°C
10
1.5
1.0
1
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=7mΩ
0.0
-50
-25
0
25
50
75
100
125
150
175
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
Capacitance
C - Capacitance (pF)
7000
6000
5000
4000
3000
2000
1000
0
1
Gate Charge
V
GS
- Gate-Source Voltage (V)
10
9
8
7
6
5
4
3
2
1
0
0
50
100
150
8000
Frequency=1.0MHz
Ciss
VDS=80V
IDS=65A
Coss
Crss
10
100
V
DS
- Drain-Source Voltage (V)
Q
G
- Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2013
5
www.ruichips.com
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