VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
Cathode
Anode
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
DO-204AL
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-204AL (DO-41)
1A
50 V, 60 V
0.65 V
10.0 mA at 125 °C
150 °C
Single die
2.0 mJ
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-MBR... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
50/60
150
0.65
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR150
50
VS-MBR150-M3
50
VS-MBR160
60
VS-MBR160-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 75 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.0
150
25
2.0
1.0
mJ
A
A
UNITS
Revision: 20-Sep-11
Document Number: 93439
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
2A
Maximum forward voltage drop
See fig. 1
V
FM (1)
3A
1A
2A
3A
T
J
= 25 °C
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 100 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
V
R
= Rated V
R
T
J
= 125 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
0.75
0.9
1.0
0.65
0.75
0.82
0.5
5
10
55
8.0
10 000
pF
nH
V/µs
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
80
0.33
0.012
Case style DO-204AL (DO-41)
MBR150
MBR160
UNITS
°C
°C/W
g
oz.
Marking device
Notes
(1)
(2)
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
Revision: 20-Sep-11
Document Number: 93439
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
160
I
F
- Instantaneous Forward Current (A)
10
Allowable Lead Temperature (°C)
140
120
100
80
60
40
20
0
DC
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
93439_04
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
93439_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
1
100
I
R
- Reverse Current (mA)
Average Power Loss (W)
10
1
0.1
0.01
0.001
0.0001
0
10
T
J
= 150 °C
T
J
= 125 °C
0.8
0.6
RMS Limit
0.4
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
T
J
= 25 °C
0.2
0
20
30
40
50
60
70
93439_05
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
93439_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
100
I
FSM
- Non-Repetitive Surge Current (A)
1000
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
93439_03
10
10
100
1000
10 000
10
20
30
40
50
60
70
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93439_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 20-Sep-11
Document Number: 93439
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
1
2
3
4
5
-
-
-
-
-
2
1
3
60
4
TR
5
-M3
6
Vishay Semiconductors product
Schottky MBR series
Current rating: 1 = 1 A
Voltage rating
50 = 50 V
60 = 60 V
TR = Tape and reel package
None = Bulk package
6
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR150
VS-MBR150TR
VS-MBR150-M3
VS-MBR150TR-M3
VS-MBR160
VS-MBR160TR
VS-MBR160-M3
VS-MBR160TR-M3
QUANTITY PER T/R
1000
5000
1000
5000
1000
5000
1000
5000
MINIMUM ORDER QUANTITY
1000
5000
1000
5000
1000
5000
1000
5000
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95241
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 20-Sep-11
Document Number: 93439
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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