TSF20H100C-S thru TSF20H150C-S
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque: 0.56 Nm max.
Weight:
1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
I
F
= 5A
Instantaneous forward
voltage per diode (Note1)
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
T
J
T
STG
0.59
V
F
0.71
0.53
0.62
-
8
MAX
-
0.79
-
0.70
150
18
TSF20H
100C-S
100
TSF20H
120C-S
120
20
10
120
10000
TYP
0.66
0.78
0.56
0.64
-
8
4.5
- 55 to +150
- 55 to +150
MAX
-
0.86
-
0.72
150
18
TYP
0.74
0.82
0.60
0.68
-
2
MAX
-
0.92
-
0.78
100
12
μA
mA
°C/W
°C
°C
V
TSF20H
150C-S
150
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Document Number: DS_D1412011
Version: A14
TSF20H100C-S thru TSF20H150C-S
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSF20HXXXC-S
(Note 1)
PACKING CODE
C0
PACKING CODE
SUFFIX
G
PACKAGE
ITO-220AB
PACKING
50 / Tube
Note 1: "XXX" defines voltage from 100V (TSF20H100C-S) to 150V (TSF20H150C-S)
EXAMPLE
PREFERRED
PART NO.
TSF20H150C-S C0G
PART NO.
TSF20L150C-S
PACKING CODE
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
25
TSF20H100C-S~120C-S
AVERAGE FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TSF20H100C-S
20
10
T
J
=150
o
C
15
TSF20H150C-S
1
T
J
=125
o
C
T
J
=100
o
C
10
5
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
0.1
T
J
=25
o
C
0
0
25
50
75
100
125
150
CASE TEMPERATURE (
o
C)
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TSF20H120C-S
TSF20H150C-S
10
T
J
=150
o
C
10
T
J
=150
o
C
1
T
J
=125
o
C
T
J
=100
o
C
1
T
J
=125
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
0.1
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Document Number: DS_D1412011
Version: A14
TSF20H100C-S thru TSF20H150C-S
Taiwan Semiconductor
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
100
TSF20H100C-S
INSTANTANEOUS REVERSE CURRENT
(mA)
INSTANTANEOUS REVERSE CURRENT
(mA)
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
TSF20H120C-S
10
1
0.1
0.01
0.001
T
J
=25
o
C
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
10
T
J
1
0.1
0.01
0.001
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
T
J
=25
o
C
0.0001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 8 TYPICAL JUNCTION CAPACITANCE
10000
TSF20H150C-S
10
1
0.1
0.01
0.001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
JUNCTION CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
TSF20H100C-S
TSF20H120C-S
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
1000
100
TSF20H150C-S
T
J
=25
o
C
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Document Number: DS_D1412011
Version: A14
TSF20H100C-S thru TSF20H150C-S
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ITO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Unit (mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
0.95
0.50
2.40
14.80
-
12.60
-
2.41
Max
4.70
3.16
2.96
0.76
6.90
10.30
3.40
1.45
0.90
3.20
15.50
4.10
13.80
1.80
2.67
Unit (inch)
Min
0.17
0.10
0.09
0.02
0.25
0.38
0.12
0.04
0.02
0.09
0.58
-
0.50
-
0.09
Max
0.19
0.12
0.12
0.03
0.27
0.41
0.13
0.06
0.04
0.13
0.61
0.16
0.54
0.07
0.11
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1412011
Version: A14
TSF20H100C-S thru TSF20H150C-S
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such
products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or
use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_D1412011
Version: A14
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