White Electronic Designs
WV3EG2128M72EFSU-AD4
ADVANCED*
2GB – 2x128Mx72 DDR SDRAM, UNBUFFERED, w/PLL, FBGA
FEATURES
Fast data transfer rate: PC-2700 & PC-3200*
Data rate of 333 Mb/s & 400 Mb/s*
V
CC
= V
CCQ
= 2.5V +/-0.2V
V
CCSPD
= 2.3V to 3.6V
Supports ECC error detection and correction
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2, 2.5 (clock)
Programmable Burst Length (2, 4 or 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, 7.8
μs
refresh interval
(8K/64ms fresh)
Serial presence detect (SPD) with EEPROM
Dual Rank
Gold edge contacts
200 pin, SO-DIMM package
•
PCB height option:
30.48 mm (1.20”)
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
The WV3EG2128M72EFSU is a 2x128Mx72 Double
Data Rate SDRAM memory module based on 1Gb DDR
SDRAM components. The module consists of eighteen
128Mx8 DDR SDRAMs die stacked in FBGA packages
mounted on a 200 pin FR4 substrate.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR400@CL=3*
Clock Speed
CL-t
RCD
-t
RP
* Consult factory for availability.
DDR333@CL=2.5
166MHz
2.5-3-3
200MHz
3-3-3
March 2006
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
PIN CONFIGURATION
PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL PIN# SYMBOL
51
V
SS
101
A9
151
DQ42
1
V
REF
2
V
REF
52
V
SS
102
A8
152
DQ46
53
DQ19
103
V
SS
153
DQ43
3
V
SS
4
V
SS
54
DQ23
104
V
SS
154
DQ47
5
DQ0
55
DQ24
105
A7
155
V
CC
6
DQ4
56
DQ28
106
A6
156
V
CC
7
DQ1
57
V
CC
107
A5
157
V
CC
8
DQ5
58
V
CC
108
A4
158
NC
9
V
CC
59
DQ25
109
A3
159
V
SS
10
V
CC
60
DQ29
110
A2
160
NC
11
DQS0
61
DQS3
111
A1
161
V
SS
12
DM0
62
DM3
112
A0
162
V
SS
13
DQ2
63
V
SS
113
V
CC
163
DQ48
14
DQ6
64
V
SS
114
V
CC
164
DQ52
65
DQ26
115
A10/AP
165
DQ49
15
V
SS
16
V
SS
66
DQ30
116
BA1
166
DQ53
17
DQ3
67
DQ27
117
BA0
167
V
CC
18
DQ7
68
DQ31
118
RAS#
168
V
CC
19
DQ8
69
V
CC
119
WE#
169
DQS6
20
DQ12
70
V
CC
120
CAS#
170
DM6
21
V
CC
71
CB0
121
CS0#
171
DQ50
22
V
CC
72
CB4
122
CS1#
172
DQ54
23
DQ9
73
CB1
123
NC
173
V
SS
24
DQ13
74
CB5
124
CS2#
174
V
SS
25
DQS1
75
V
SS
125
V
SS
175
DQ51
26
DM1
76
V
SS
126
V
SS
176
DQ55
27
V
SS
77
DQS8
127
DQ32
177
DQ56
78
DM8
128
DQ36
178
DQ60
28
V
SS
29
DQ10
79
CB2
129
DQ33
179
V
CC
30
DQ14
80
CB6
130
DQ37
180
V
CC
31
DQ11
81
V
CC
131
V
CC
181
DQ57
32
DQ15
82
V
CC
132
V
CC
182
DQ61
83
CB3
133
DQS4
183
DQS7
33
V
CC
84
CB7
134
DM4
184
DM7
34
V
CC
35
CK0
85
CS3#
135
DQ34
185
V
SS
36
V
CC
86
NC
136
DQ38
186
V
SS
37
CK0#
87
V
SS
137
V
SS
187
DQ58
38
V
SS
88
V
SS
138
V
SS
188
DQ62
39
V
SS
89
NC
139
DQ35
189
DQ59
40
V
SS
90
V
SS
140
DQ39
190
DQ63
41
DQ16
91
NC
141
DQ40
191
V
CC
42
DQ20
92
V
CC
142
DQ44
192
V
CC
43
DQ17
93
V
CC
143
V
CC
193
SDA
44
DQ21
94
V
CC
144
V
CC
194
SA0
45
V
CC
95
CKE1
145
DQ41
195
SCL
46
V
CC
96
CKE0
146
DQ45
196
SA1
47
DQS2
97
NC
147
DQS5
197
V
CCSPD
48
DM2
98
NC
148
DM5
198
SA2
49
DQ18
99
A12
149
V
SS
199
NC
50
DQ22
100
A11
150
V
SS
200
NC
WV3EG2128M72EFSU-AD4
ADVANCED
PIN NAMES
Symbol
A0-A12
BA0, BA1
DQ0-DQ63
CB0-CB7
DQS0-DQS8
CK0, CK0#
CKE0-CKE1
CS0#-CS3#
RAS#
CAS#
WE#
DM0-DM8
V
CC
V
CCQ
V
SS
V
REF
V
CCSPD
SDA
SCL
SA0-SA2
NC
Description
Address input
Bank Address
Input/Output: Data I/Os, Data bus
Input/Output: Check Bits
Data Strobe
Clock Input
Clock Enable Input
Chip Select Input
Row Address Strobe
Column Address Strobe
Write Enable
Data Write Mask
Supply: Power Supply: +2.5V ±0.2V
Power Supply for DQS
Supply: Ground
Supply: SSTL_2 reference voltage
Supply: Serial EEPROM Positive
Power Supply
Input/Output: Serial Presence-Detect
Data
Serial Clock
Presence Detect Address Input
No Connect
March 2006
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WV3EG2128M72EFSU-AD4
ADVANCED
FUNCTIONAL BLOCK DIAGRAM
CS3#
CS2#
CS1#
CS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS8
DM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ52
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S0# S2#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS S1# S3#
DM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
SCL
WP
SERIAL PD
A0
A1
A2
SDA
SA1 SA2
HARDWARE ON MEMORY MODULE
SCL
WP
SERIAL PD
A0
v
cc
A1
A2
SDA
SA1 SA2
BA0-BA1
A0-A12
RAS#
CAS#
WE#
CKE0
CKE1
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
HARDWARE ON MEMORY MODULE
120
CK0
CK0#
PLL
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
DDR SDRAM x 4
Note: 1. All resistor values are 22
Ω
unless otherwise specified.
March 2006
Rev. 0
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
and V
CCQ
supply relative to V
SS
Voltage on V
REF
supply relative to V
SS
Storage Temperature
Operating Temperature
Power Dissipation
Short Circuit Current
WV3EG2128M72EFSU-AD4
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
, V
OUT
V
CC
/V
CCQ
V
REF
T
STG
T
A
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-1.0 to 3.6
-55 to +150
0 to 70
36
50
Units
V
V
V
°C
°C
W
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
AC OPERATING CONDITIONS
Parameter
Input high (logic 1) voltage
Input Low (logic 0) voltage
Input differential voltage, CK and CK# inputs
Input crossing point voltage, CK and CK# input
Symbol
V
IN
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
Min
V
REF
+0.31
0.7
0.5*V
CCQ
-0.2
Max
V
REF
-0.31
V
CCQ
+0.6
0.5*V
CCQ
+0.2
Unit
V
V
V
V
INPUT/OUTPUT CAPACITANCE
T
A
=
25°C, f = 100MHz
Parameter
Input capacitance (A0 ~ A12, BA0 ~ BA1, RAS#, CAS#, WE#)
Input capacitance (CKE0, CKE1)
Input capacitance (CS0# ~ CS3#)
Input capacitance (CK, CK#)
Input capacitance (DM0 ~ DM8), (DQS0 ~ DQS8)
Input capacitance (DQ0 ~ DQ63), (CB0 ~ CB7)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
COUNT1
Min
95.8
104.8
49.9
6
22.8
22.8
Max
119.2
115.6
61.6
7.5
24
24
Unit
pF
pF
pF
pF
pF
pF
March 2006
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
0°C
Parameter
Supply voltage DDR266/DDR333 (nominal V
CC
of 2.5V)
I/O Supply voltage DDR266/DDR333 (nominal V
CC
of 2.5V)
I/O Reference voltage
I/O Termination voltage
Input logic high voltage
Input logic low voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
Addr, CAS#,
RAS#, WE#
CS#
CKE
CK, CK#
DM
T
A
70°C
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
V
IX
(DC)
WV3EG2128M72EFSU-AD4
ADVANCED
DC CHARACTERISTICS
Min
2.3
2.3
0.49*V
CCQ
V
REF
-0.04
V
REF
+0.15
-0.3
-0.3
0.3
0.3
-72
-18
-36
-10
-8
-20
-16.8
16.8
-9
9
Max
2.7
2.7
0.51*V
CCQ
V
REF
+0.04
V
CCQ
+0.30
V
REF
-0.15
V
CCQ
+0.30
V
CCQ
+0.60
V
CCQ
+0.60
72
18
36
10
8
20
—
—
—
—
Unit
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
μA
μA
mA
mA
mA
mA
Note
1
2
3
Input leakage current
I
I
Output leakage current
Output high current (normal strength); V
OUT
= V +0.84V
Output high current (normal strength); V
OUT
= V
TT
-0.84V
Output high current (half strength); V
OUT
= V
TT
+0.45V
Output high current (half strength); V
OUT
= V
TT
-0.45V
I
OZ
I
OH
I
OL
I
OH
I
OL
NOTES:
1. V
REF
is expected to be equal to 0.5*V
CCQ
of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on V
REF
may not exceed ±2% of the DC
value.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and must track variations in the DC level of V
REF.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK#.
March 2006
Rev. 0
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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