1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.11 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJL
R
θJA
T
J
T
STG
VALUE
1000
5
100
3.5 / 5.0
20
100
- 55 to +175
- 55 to +175
UNIT
Watts
Watts
A
Volts
o
C/W
°C
°C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
Note 2: V
F
=3.5V for Devices of V
BR
≦50V
and V
F
=5.0V Max. for Devices V
BR
>50V
Devices for Bipolar Applications
1. For Bidirectional use CA suffix
ORDER INFORMATION (EXAMPLE)
1KSMB39A R5G
Green compound code
Packing code
Part no.
Document Number: DS_D1408012
Version: E15
1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
125
P
PPM
, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
100
75
50
25
0
0
25
50
75
100
125
150
175
200
10
1
1
10
100
1000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF I
PPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms Single Half Sine Wave
tr=10μs
Peak Value
I
PPM
PEAK PULSE CURRENT (%)
Half Value-I
PPM
/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Document Number: DS_D1408012
Version: E15
1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
1KSMB91A
1KSMB91CA
1KSMB100A
1KSMB100CA
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. All terms and symbols are consistent with ANSI/IEEE C62.35.
3. For Bidirectional use CA suffix
B10B
O10B
B10C
O10C
86.5
95
Max
95.5
105
Test
Current
I
T
(mA)
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
77.8
85.5
Maximum
@ V
WM
I
D
(μA)
1.0
1.0
Maximum
Current I
PPM
(A) (Note 2)
8.0
7.3
Maximum
@ I
PPM
V
C
(V)
125
137
Device
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage
Document Number: DS_D1408012
Version: E15
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