Si1400DL
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.150 at V
GS
= 4.5 V
0.235 at V
GS
= 2.5 V
I
D
(A)
1.7
1.3
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D
1
6
D
Marking Code
ND
D
2
5
D
XX
YY
Lot Traceability
and Date Code
Part # Code
G
3
4
S
Top View
Ordering Information:
Si1400DL-T1-E3 (Lead (Pb)-free)
Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.8
0.625
0.40
- 55 to 150
1.7
1.2
5
0.8
0.568
0.295
W
°C
5s
20
± 12
1.6
1.0
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
165
180
105
Maximum
200
220
130
°C/W
Unit
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
www.vishay.com
1
Si1400DL
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 0.8 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 20
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1.7 A
2.1
0.3
0.4
10
30
14
8
30
17
50
25
15
50
ns
4.0
nC
a
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 1.7 A
V
GS
= 2.5 V, I
D
= 1.3 A
V
DS
= 10 V, I
D
= 1.7 A
I
S
= 0.8 A, V
GS
= 0 V
Min.
0.6
Typ.
Max.
Unit
V
± 100
1
5
2
0.123
0.195
5
0.78
1.1
0.150
0.235
nA
µA
A
Ω
S
V
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
2.5
V
4
I
D
- Drain Current (A)
V
GS
= 4.5
V
thru 3
V
I
D
- Drain Current (A)
4
5
3
3
2
2
V
1
1.5
V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
T
C
= 125 °C
1
25 °C
- 55 °C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.5
300
R
DS(on)
- On-Resistance (Ω)
0.4
C - Capacitance (pF)
240
C
iss
180
0.3
V
GS
= 2.5
V
V
GS
= 4.5
V
0.1
0.2
120
C
oss
60
C
rss
0
0
1
2
3
4
5
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
4.5
V
DS
= 10
V
I
D
= 1.7 A
3.6
R
DS(on)
- On-Resistance
1.8
V
GS
= 4.5
V
I
D
= 1.7 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
1.6
1.4
(Normalized)
2.7
1.2
1.8
1.0
0.9
0.8
0
0
0.5
1.0
1.5
2.0
2.5
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
10
0.40
On-Resistance vs. Junction Temperature
R
DS(on)
- On-Resistance (Ω)
0.32
I
S
- Source Current (A)
0.24
I
D
= 1.7 A
0.16
1
T
J
= 150 °C
T
J
= 25 °C
0.08
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
www.vishay.com
3
Si1400DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
10
0.2
V
GS(th)
Variance
(V)
I
D
= 250
µA
0
Power (W)
8
6
- 0.2
4
- 0.4
2
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
30
T
J
- Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 400 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71179.
www.vishay.com
4
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
Package Information
Vishay Siliconix
SC 70:
6 LEADS
MILLIMETERS
6
5
4
E
1
E
1
2
3
-B-
e
e
1
D
-A-
c
A
2
A
L
A
1
b
INCHES
Min
0.035
–
0.031
0.006
0.004
0.071
0.071
0.045
Dim
A
A
1
A
2
b
c
D
E
E
1
e
e
1
L
Min
0.90
–
0.80
0.15
0.10
1.80
1.80
1.15
Nom
–
–
–
–
–
2.00
2.10
1.25
0.65BSC
Max
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
Nom
–
–
–
–
–
0.079
0.083
0.049
0.026BSC
Max
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
1.20
0.10
1.30
0.20
7_Nom
1.40
0.30
0.047
0.004
0.051
0.008
7_Nom
0.055
0.012
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
创意市集
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
