Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR643CTS1
thru
SDR647CTS1
50 AMP
300-700 Volts
35 nsec
Ultra Fast
Centertap Rectifier
Features:
•
•
•
•
•
•
•
•
Ultra Fast Recovery: 25 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Power Surface Mount Package
Ceramic Seals Available
Higher Currents & Voltages Available – Contact Factory
TX, TXV, and S-Level Screening Available
2/
DESIGNER’S DATA SHEET
SDR64 ___ CT ___ ___
│
│
└
Screening
2/
__ = Not Screened
│
│
TX = TX Level
│
│
TXV = TXV
│
│
S = S Level
│
└
Package
│
S1= SMD1
└
Voltage/Family
3 = 300 V
4 = 400 V
5 = 500 V
6 = 600 V
7 = 700 V
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR643CTS1
SDR644CTS1
SDR645CTS1
SDR646CTS1
SDR647CTS1
Symbol
V
RRM
V
RWM
V
R
Io
Value
300
400
500
600
700
50
Units
Volts
Average Rectified Forward Current
note 3
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
Peak Surge Current
note 3
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case, note 3
Amps
I
FSM
Top & Tstg
R
θJC
500
-65 to +200
2.00
1.20
SMD1
Amps
ºC
ºC/W
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screened to MIL-PRF-19500; contact factory for screening flow.
3/
Both legs tied together
*Also available in other packages: TO-254, TO-254Z, TO-257, and 28 Pin CLCC –
Consult Factory
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0087D
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR643CTS1
thru
SDR647CTS1
Electrical Characteristics (Per Leg)
Characteristics
Instantaneous Forward Voltage Drop
(I
F
= 5Adc, T
A
= 25ºC, 300 msec pulse)
(I
F
= 10Adc, T
A
= 25ºC, 300 msec pulse)
(I
F
= 15Adc, T
A
= 25ºC, 300 msec pulse)
(I
F
= 20Adc, T
A
= 25ºC, 300 msec pulse)
(I
F
= 30Adc, T
A
= 25ºC, 300 msec pulse)
Instantaneous Forward Voltage Drop
(I
F
= 15Adc, T
A
= 100ºC, 300 msec pulse)
(I
F
= 30Adc, T
A
= 100ºC, 300 msec pulse)
(I
F
= 15Adc, T
A
= -55ºC, 300 msec pulse)
(I
F
= 30Adc, T
A
= -55ºC, 300 msec pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300 msec pulse min)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300 msec pulse min)
(Rated V
R
, T
A
= 125ºC, 300 msec pulse min)
(Rated V
R
, T
A
= 150ºC, 300 msec pulse min)
Junction Capacitance
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 0.5 A, I
R
= 1A, I
RR
= 0.25A, T
A
= 25ºC)
(I
F
= 0.5 A, I
R
= 1A, I
RR
= 0.25 A, T
A
= 100ºC)
(I
F
= 10 A, dI
F
/dt = 100A/us, T
A
= 25ºC)
(I
F
= 10 A, dI
F
/dt = 100A/us, T
A
= 100ºC)
Symbol
V
F1
V
F2
V
F3
V
F4
V
F5
V
F7
Typical
0.94
1.0
1.05
1.07
1.1
0.93
1.00
1.15
1.20
30
10
2
8
25
60
25
70
35
2.7
1.83
80
3.6
1.0
Maximum
-
-
1.35
-
1.5
1.25
-
1.5
-
150
50
10
-
-
120
35
-
-
-
-
-
-
-
Unit
Volts
V
F6
V
F8
V
F9
SDR647CTS1
ALL OTHER
Volts
I
R1
I
R2
I
R3
I
R4
C
J
t
rr1
t
rr2
t
rr3
I
RM3
t
a
/t
b
t
rr4
I
RM4
t
a
/t
b
μA
mA
pF
nsec
nsec
nsec
A
-
nsec
A
-
Case Outline:
SMD1
PIN OUT:
PIN 1: ANODE 1
PIN 2: CATHODE
PIN 3: ANODE 2
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0087D
DOC
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