Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com
*
www.ssdi-power.com
SDR966CTN & SDR966CTP
thru
SDR969CTN & SDR969CTP
60 AMP
600 - 900 Volts
80 nsec
Ultra Fast Recovery
Centertap Rectifier
TO-258 (N)
TO-259 (P)
DESIGNER’S DATA SHEET
Features:
•
Soft Recovery Diode
•
Ultra Fast Recovery: 80 nsec Maximum
•
Faster Recovery Versions Available
•
High Surge Rating
•
Low Reverse Leakage Current
•
Low Junction Capacitance
•
Hermetically Sealed Package
•
Gold Eutectic Die Attach Available
•
Ultrasonic Aluminum Wire Bond
•
Ceramic Seals for Improved Hermeticity Available
•
Common Anode and Doubler Versions Available
•
TX, TXV, Space Level Screening Available.
Consult Factory.
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR966CTN & SDR966CTP
SDR967CTN & SDR967CTP
SDR968CTN & SDR968CTP
SDR969CTN & SDR969CTP
Symbol
V
RRM
V
RWM
V
R
Io
Value
600
700
800
900
60
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
1/
Peak Surge Current (Per Leg)
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case, Each Individual Diode
Junction to Case
1/
Notes:
1/
Both Legs Tied Together
*
Available with Higher Surge Rating
Amps
I
FSM
500*
Amps
Top & Tstg
-65 to +200
1.3
0.7
ºC
R
θJE
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0077B
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com
*
www.ssdi-power.com
SDR966CTN & SDR966CTP
thru
SDR969CTN & SDR969CTP
Symbol
I
F
= 15A
I
F
= 30A
T
A
= 100ºC
T
A
= -55ºC
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
C
J
T
A
= 25ºC
Case Outline:
TO-259 (P)
Pin 1: Anode 1
Pin 2: Cathode
Pin 3: Anode 2
PIN 3
Electrical Characteristics (Per Leg)
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, 300
µs
Pulse)
Instantaneous Forward Voltage Drop
(I
F
= 15A, 300
µs
Pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300
µs
Pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300
µs
Pulse minimum)
Junction Capacitance
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A)
Case Outline:
TO-258 (N)
Pin 1: Anode 1
Pin 2: Cathode
Pin 3: Anode 2
2x .205
.195
.405
.395
PIN 2
Min
––
––
––
––
––
––
––
––
––
.550
.530
.135 TYP
.120
1.300
1.030
Max
1.20
1.35
1.10
1.30
100
10
100
80
Units
Volts
Volts
µA
mA
pF
nsec
t
rr
.750
.500
2x Ø.165
.155
.835
.815
.545
.535
.750
.500
2x .255
.245
PIN 3
1.215 .945 .700
1.175 .935 .680
.695
.685
2x .205
.195
.405
.395
PIN 2
PIN 1
.045
3x Ø
.035
PIN 1
3x Ø.045
.035
SUFFIX: N
.707
.697
.270
.240
.045
.035
2x .200
.170
SUFFIX: P
.145
.135
.290
.280
2x .265
.245
2x Ø.150
.120
.270
.240
.190 MIN
.145
.135
.045
.035
2x .200
.170
.190 MIN
.190 MIN
SUFFIX: NDB
SUFFIX: NUB
2x .200
.170
SUFFIX: PDB
.190 MIN
SUFFIX: PUB
2x .200
.170
TYPICAL OPERATING CURVES
T
A
= 25
o
C Unless Otherwise Specified
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
