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RTAX1000S-CGS624B

产品描述Field Programmable Gate Array, 12096 CLBs, 1000000 Gates, CMOS, CBGA624
产品类别可编程逻辑器件    可编程逻辑   
文件大小6MB,共198页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
下载文档 详细参数 全文预览

RTAX1000S-CGS624B概述

Field Programmable Gate Array, 12096 CLBs, 1000000 Gates, CMOS, CBGA624

RTAX1000S-CGS624B规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microchip(微芯科技)
包装说明CERAMIC, CGA-624
Reach Compliance Codecompliant

文档预览

下载PDF文档
v5.4
RTAX-S/SL RadTolerant FPGAs
Radiation Performance
SEU-Hardened Registers Eliminate the Need for Triple-
Module Redundancy (TMR)
– Immune to Single-Event Upsets (SEU) to LET
TH
> 37
MeV-cm
2
/mg
– SEU Rate < 10
-10
Errors/Bit-Day in Worst-Case
Geosynchronous Orbit
Expected SRAM Upset Rate of <10
-10
Errors/Bit-Day with
Use of Error Detection and Correction (EDAC) IP (included)
with Integrated SRAM Scrubber
– Single-Bit Correction, Double-Bit Detection
– Variable-Rate Background Refreshing
Total Ionizing Dose Up to 300 krad (Si, Functional)
Single-Event Latch-Up Immunity (SEL) to LET
TH
> 117 MeV-
cm
2
/mg
TM1019 Test Data Available
Single Event Transient (SET) – No Anomalies up to 150
MHz
Leading-Edge Performance
High-Performance Embedded FIFOs
350+ MHz System Performance
500+ MHz Internal Performance
700 Mb/s LVDS Capable I/Os
Specifications
Up to 4 Million Equivalent System Gates or 500 k
Equivalent ASIC Gates
Up to 20,160 SEU-Hardened Flip-Flops
Up to 840 I/Os
Up to 540 kbits Embedded SRAM
Manufactured on Advanced 0.15
μm
CMOS Antifuse
Process Technology, 7 Layers of Metal
Electrostatic Discharge (ESD) is 2,000 V (HBM MIL-STD-883,
TM3015)
Processing Flows
B-Flow – MIL-STD-883B
E-Flow – Actel Extended Flow
EV-Flow – Class V Equivalent Flow Processing Consistent
with MIL-PRF 38535
Features
Single-Chip, Nonvolatile Solution
1.5 V Core Voltage for Low Power
Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3 V PCI
– JTAG Boundary Scan Testing (as per IEEE 1149.1)
– Differential I/O Standards: LVPECL and LVDS
– Voltage-Referenced I/O Standards: GTL+, HSTL Class 1,
SSTL2 Class 1 and 2, SSTL3 Class 1 and 2
– Hot-Swap Compliant with Cold-Sparing Support
(Except PCI)
Embedded Memory with Variable Aspect Ratio and
Organizations:
– Independent, Width-Configurable Read and Write Ports
– Programmable Embedded FIFO Control Logic
– ROM Emulation Capability
Deterministic, User-Controllable Timing
Unique In-System Diagnostic and Debug Capability
Prototyping Options
Commercial
Axcelerator
Devices
for
Functional
Verification
RTAX-S PROTO Devices with Same Functional and Timing
Characteristics as Flight Unit in a Non-Hermetic Package
Low Priced Reprogrammable ProASIC
®
3 Option for
Functional Verification
RTAX-SL Low Power Option
Offers Approximately Half the Standby Current of the
Standard RTAX-S Device at Worst-Case Conditions
Table 1 •
RTAX-S/SL Family Product Profile
Device
Capacity
Equivalent System Gates
ASIC Gates
Modules
Register (R-cells)
Combinatorial (C-cells)
Flip-Flops (maximum)
Embedded RAM/FIFO (without EDAC)
Core RAM Blocks
Core RAM Bits (K = 1,024)
Clocks (segmentable)
Hardwired
Routed
I/Os
I/O Banks
User I/Os (maximum)
I/O Registers
Package
CCGA/LGA
CQFP
RTAX250S/SL
250,000
30,000
1,408
2,816
2,816
12
54 k
4
4
8
198
744
624
208, 352
RTAX1000S/SL
1,000,000
125,000
6,048
12,096
12,096
36
162 k
4
4
8
418
1,548
624
352
RTAX2000S/SL
2,000,000
250,000
10,752
21,504
21,504
64
288 k
4
4
8
684
2,052
624, 1152
256, 352
RTAX4000S/SL
4,000,000
500,000
20,160
40,320
40,320
120
540 k
4
4
8
840
2,520
1272
352
May 2009
© 2009 Actel Corporation
i
See the Actel website for the latest version of the datasheet.
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