CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
•
Efficient use of board space: requires only 42mm
2
of board
space vs. 120mm
2
of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
•
50% higher density (Amps/mm
2
) than the industry standard
1.0 Amp surface mount bridge rectifier.
•
Glass passivated chips for high reliability.
HD DIP CASE
•
This series is UL listed: file number E130224
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
SYMBOL
VRRM
VR
VR(RMS)
IO
IO
IFSM
TJ, Tstg
Θ
JA
100
100
70
0.5
0.8
30
-65 to +150
85
UNITS
V
V
V
A
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
IR
VR= 100V
5.0
IR
VF
CJ
VR= 100V, TA=125°C
IF=400mA
VR=4.0V, f=1.0MHz
9.0
500
1.0
UNITS
µA
µA
V
pF
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
R2 (4-January 2010)
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