CBR1F-D020S SERIES
SURFACE MOUNT
1 AMP FAST RECOVERY
SILICON BRIDGE RECTIFIER
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1F-D020S
Series types are fast recovery, full wave bridge
rectifiers mounted in a durable epoxy surface mount
molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise specified)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C)
Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage
Junction Temperature
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
I
2
t
TJ, Tstg
CBR1F-
D020S
200
200
140
CBR1F-
D040S
400
400
280
CBR1F-
D060S
600
600
420
1.0
50
3.74
-65 to +150
CBR1F- CBR1F-
D080S
D100S
800
800
560
1000
1000
700
UNITS
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
IR
IR
VF
trr
trr
trr
CJ
VR=Rated VRRM
VR=Rated VRRM, TA=125°C
IF=1.0A
IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V)
IF=0.5A, IR=1.0A, Rec. to 0.25A (600V)
IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V)
VR=4.0V, f=1.0MHz
25
MAX
5.0
0.5
1.3
200
300
500
UNITS
µA
mA
V
ns
ns
ns
pF
R1 (4-January 2010)
CBR1F-D020S SERIES
SURFACE MOUNT
1 AMP FAST RECOVERY
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R1 (4-January 2010)
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