1 A, 300 V, SILICON, SIGNAL DIODE
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | HERMETIC SEALED, GPR-1A, 2 PIN |
| 针数 | 2 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| 最大正向电压 (VF) | 1.2 V |
| JESD-30 代码 | E-LALF-W2 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 200 °C |
| 最低工作温度 | -65 °C |
| 最大输出电流 | 1 A |
| 封装主体材料 | GLASS |
| 封装形状 | ELLIPTICAL |
| 封装形式 | LONG FORM |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 300 V |
| 最大反向恢复时间 | 0.15 µs |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| 1N4943 | 1N4942 | IP3319CX6_15 | 1N4944 | 1N4946 | 1N4947 | 1N4948 | |
|---|---|---|---|---|---|---|---|
| 描述 | 1 A, 300 V, SILICON, SIGNAL DIODE | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP | Single-channel common-mode filter with integrated ESD protection network | 1 A, SILICON, SIGNAL DIODE, DO-41 | 1 A, SILICON, SIGNAL DIODE | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 是否无铅 | 含铅 | 含铅 | - | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | HERMETIC SEALED, GPR-1A, 2 PIN | HERMETIC SEALED, GPR-1A, 2 PIN | - | HERMETIC SEALED, GPR-1A, 2 PIN | HERMETIC SEALED, GPR-1A, 2 PIN | HERMETIC SEALED, GPR-1A, 2 PIN | HERMETIC SEALED, GPR-1A, 2 PIN |
| 针数 | 2 | 2 | - | 2 | 2 | 2 | 2 |
| Reach Compliance Code | not_compliant | _compli | - | unknow | _compli | not_compliant | _compli |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
| 二极管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON |
| 二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| 最大正向电压 (VF) | 1.2 V | 1.2 V | - | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| JESD-30 代码 | E-LALF-W2 | E-LALF-W2 | - | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 |
| JESD-609代码 | e0 | e0 | - | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | - | 2 | 2 | 2 | 2 |
| 最高工作温度 | 200 °C | 175 °C | - | 175 °C | 175 °C | 175 °C | 175 °C |
| 最大输出电流 | 1 A | 1 A | - | 1 A | 1 A | 1 A | 1 A |
| 封装主体材料 | GLASS | GLASS | - | GLASS | GLASS | GLASS | GLASS |
| 封装形状 | ELLIPTICAL | ELLIPTICAL | - | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL |
| 封装形式 | LONG FORM | LONG FORM | - | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大重复峰值反向电压 | 300 V | 200 V | - | 400 V | 600 V | 800 V | 1000 V |
| 最大反向恢复时间 | 0.15 µs | 0.15 µs | - | 0.15 µs | 0.25 µs | 0.25 µs | 0.5 µs |
| 表面贴装 | NO | NO | - | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | - | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | AXIAL | AXIAL | - | AXIAL | AXIAL | AXIAL | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | - | Central Semiconductor | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
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