CF
P1
5
PMEG045V100EPD
4 December 2014
45 V, 10 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Average forward current: I
F(AV)
≤ 10 A
Reverse voltage: V
R
≤ 45 V
Extremely low forward voltage
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; T
sp
≤ 160 °C;
square wave
T
j
= 25 °C
I
F
= 10 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
V
R
= 10 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
V
R
= 45 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
-
250
600
µA
-
20
50
µA
-
-
-
420
45
490
V
mV
Min
-
Typ
-
Max
10
Unit
A
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMEG045V100EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
A
K
anode
anode
cathode
Simplified outline
1
3
2
Graphic symbol
K
A
A
aaa-009063
CFP15 (SOT1289)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG045V100EPD
CFP15
Description
plastic, thermal enhanced ultra thin SMD package; 3 leads;
body: 5.8 x 4.3 x 0.78 mm
Version
SOT1289
Type number
7. Marking
Table 4.
Marking codes
Marking code
045V 100E
Type number
PMEG045V100EPD
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
I
FSM
P
tot
Parameter
reverse voltage
forward current
average forward current
non-repetitive peak forward
current
total power dissipation
Conditions
T
j
= 25 °C
T
sp
= 155 °C; δ = 1
δ = 0.5; f = 20 kHz; T
sp
≤ 160 °C;
square wave
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-55
Max
45
14
10
210
1.66
2.15
3.75
175
175
Unit
V
A
A
A
W
W
W
°C
°C
T
j
T
amb
PMEG045V100EPD
junction temperature
ambient temperature
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 December 2014
2 / 15
NXP Semiconductors
PMEG045V100EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
Symbol
T
stg
Parameter
storage temperature
[1]
[2]
[3]
Conditions
Min
-65
Max
175
Unit
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
2
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
10
2
Z
th(j-a)
(K/W)
10
0.05
0.02
1
0.01
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
90
70
40
3
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
aaa-014542
2
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0
10
-1
10
-3
10
-2
10
-1
10
2
10
3
1
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG045V100EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 December 2014
3 / 15
NXP Semiconductors
PMEG045V100EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
10
2
Z
th(j-a)
(K/W)
10
aaa-014543
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
1
0.02
0.01
0
10
-1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
2
aaa-014544
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
1
0.01
0.02
0
10
-1
10
-3
10
-2
10
-1
10
2
10
3
1
10
t
p
(s)
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG045V100EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 December 2014
4 / 15
NXP Semiconductors
PMEG045V100EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V
(BR)R
V
F
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
Conditions
I
R
= 5 mA; T
j
= 25 °C; t
p
≤ 1.2 ms;
δ ≤ 0.12; pulsed
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
I
F
= 5 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
I
F
= 10 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
I
F
= 10 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 125 °C; pulsed
I
R
reverse current
V
R
= 5 V; t
p
≤ 3 ms; δ ≤ 0.3; T
j
= 25 °C;
pulsed
V
R
= 10 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
V
R
= 30 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
V
R
= 45 V; t
p
≤ 3 ms; δ ≤ 0.3;
T
j
= 25 °C; pulsed
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C
t
rr
t
rr
V
FRM
reverse recovery time
step recovery
reverse recovery time
ramp recovery
peak forward recovery
voltage
I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
dI
F
/dt = 200 A/µs; T
j
= 25 °C; I
F
= 6 A;
V
R
= 26 V
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C
-
308
-
mV
-
17
-
ns
-
-
-
1190
400
37
-
-
-
pF
pF
ns
-
250
600
µA
-
60
-
µA
-
20
50
µA
-
15
-
µA
-
330
-
mV
-
420
490
mV
-
380
430
mV
-
340
-
mV
-
320
360
mV
Min
45
Typ
-
Max
-
Unit
V
PMEG045V100EPD
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
4 December 2014
5 / 15
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
