HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
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Features
•
•
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Epitaxial Planar Die Construction
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Sub-Component P/N
MMBT2907A_DIE
MMBTA06_DIE
Reference
Q1
Q2
Device Type
PNP Transistor
NPN Transistor
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Schematic & Pin Configuration
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)
CQ1
EQ1
EQ2
Q1
MMBT2907A
MMBTA06
Q2
Top View
BQ1
BQ2
CQ2
Device Schematic
Maximum Ratings: Total Device
Characteristic
Operating and Storage Junction Temperature Range
@T
A
= 25°C unless otherwise specified
Symbol
V
EBO
Value
-55 to +150
Unit
°C
Thermal Characteristics: Total Device
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Symbol
P
D
R
θ
JA
Value
200
625
Unit
mW
°C/W
Maximum Ratings: Sub-Component Devices
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Notes:
@T
A
= 25°C unless otherwise specified
Q1-PNP Transistor
(MMBT2907A)
-60
-60
-5.5
-600
Q2-NPN Transistor
(MMBTA06)
80
65
6
500
Unit
V
V
V
mA
Symbol
V
CBO
V
CEO
V
EBO
I
C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
1 of 7
www.diodes.com
July 2008
© Diodes Incorporated
HBDM60V600W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1)
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
BL
Min
-60
-60
-5.5
⎯
⎯
⎯
100
100
100
100
50
⎯
⎯
Max
⎯
⎯
⎯
-10
-50
-50
⎯
⎯
⎯
300
⎯
-0.3
-0.5
-0.95
-1.3
⎯
45
10
40
100
80
30
@T
A
= 25°C unless otherwise specified
Unit
V
V
V
nA
nA
nA
⎯
⎯
⎯
⎯
⎯
V
V
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2.0V, I
C
= -10mA,
f = 100MHz
V
CE
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
f
T
t
on
t
d
t
r
t
off
t
s
t
r
100
⎯
⎯
⎯
⎯
⎯
⎯
MHz
ns
ns
ns
ns
ns
ns
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2)
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
4. Short duration pulse test used to minimize self-heating effect.
@T
A
= 25°C unless otherwise specified
Max
⎯
⎯
⎯
100
100
100
⎯
⎯
0.4
0.8
0.95
⎯
Unit
V
V
V
nA
nA
nA
⎯
⎯
V
V
V
MHz
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 90V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(SAT)
V
BE(ON)
V
BE(SAT)
f
T
Min
80
65
6
⎯
⎯
⎯
250
100
⎯
0.7
⎯
100
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.2
0.75
⎯
⎯
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
2 of 7
www.diodes.com
July 2008
© Diodes Incorporated
HBDM60V600W
Typical Characteristics
200
@T
A
= 25°C unless otherwise specified
P
D
, POWER DISSIPATION (mW)
150
100
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
200
PNP (MMBT2907A) Transistor (Q1) Plots:
30
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 30mA
I
C
= 300mA
20
C, CAPACITANCE (pF)
10
Cibo
5.0
Cobo
1.0
0.1
1.0
10
REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance
I
C
I
B
= 10
30
1
0.1
10
100
-I
B
, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
0.01
0.6
-V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1,000
V
CE
= 5V
0.5
T
A
= 150°C
0.4
h
FE
, DC CURRENT GAIN
100
T
A
= 25°C
T
A
= -50°C
0.3
T
A
= 150°C
0.2
T
A
= 25°C
10
0.1
T
A
= -50°C
10
1,000
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
0
1
1
1
1,000
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
3 of 7
www.diodes.com
HBDM60V600W
1.0
-V
BE(ON)
, BASE EMITTER VOLTAGE (V)
V
CE
= 5V
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
0.9
0.8
0.7
0.6
T
A
= 25°C
T
A
= -50°C
100
0.5
0.4
0.3
0.2
0.1
T
A
= 150°C
10
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
1
1
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base Emitter Voltage vs. Collector Current
NPN (MMBTA06) Transistor (Q2) Plots
10
I
CBO
, COLLECTOR-BASE CURRENT (nA)
2.0
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1.8
1.6
1.4
1.2
I
C
= 10mA
I
C
= 30mA
1
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 1mA
I
C
= 100mA
0.1
50
75
100
125
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature
0.01
25
1
0.1
10
100
I
B,
BASE CURRENT (mA)
Fig. 9 Typical Collector Saturation Region
0.01
0.500
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.450
0.400
I
C
I
B
= 10
10,000
h
FE
, DC CURRENT GAIN
T
A
= -50°C
1,000
0.350
0.300
T
A
= 25°C
0.250
0.200
0.150
0.100
0.050
0
1
T
A
= 150°C
100
10
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current
1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical DC Current Gain vs. Collector Current
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
4 of 7
www.diodes.com
July 2008
© Diodes Incorporated
HBDM60V600W
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
100
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 12 Typical Base Emitter Voltage vs. Collector Current
0.1
0.1
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
9V-12V
100
10
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 13 Typical Gain Bandwidth Product vs. Collector Current
1
1
Current Schematic along with Application Example:
HBDM60V600W
R1
EQ1
36
HBDM60V600W
MMBT2907A
Q1
R3
BQ1
CQ1
Q3
Half H-Bridge
R5
1k
CQ2
M MB TA0 6
Q2
BQ2
EQ2
D3
C2
D1
0
C1
D2
Q1
MMBT2907A
BQ1
CQ1
R4
Q4
Motor
Half H-Bridge
CQ2
M MB TA0 6
D4
Q2
BQ2
R8
1k
Forward
0
Reverse
Note:
D1, D2, D3, D4: Switching Diodes (MMBD4448)
Q3, Q4: NPN Transistors (MMBTA06)
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
5 of 7
www.diodes.com
July 2008
© Diodes Incorporated
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