CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3E Series
types are Enhanced Versions of the CMPSH-3 Series
of Silicon Schottky Diodes in an SOT-23 Surface Mount
Package.
FEATURED ENHANCED SPECIFICATIONS:
♦
I
F
from 100mA max to 200mA max.
SOT-23 CASE
CMPSH-3E:
CMPSH-3AE:
CMPSH-3CE:
CMPSH-3SE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
♦
♦
BV
R
from 30V min to 40V min.
V
F
from 1.0V max to 0.8V max.
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
D95E
DB1E
DB2E
DA5E
UNITS
V
mA
mA
mA
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
♦
Peak Repetitive Reverse Voltage
♦
Continuous Forward Current
Peak Repetitive Forward Voltage
Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ
JA
40
200
350
750
350
-65 to +150
357
♦
VF
♦
VF
♦♦
VF
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
VR=25V
90
500
IR
VR=25V, TA=100°C
25
100
IR=100µA
40
50
♦
BVR
VF
IF=2.0mA
0.29
0.33
IF=15mA
IF=100mA
IF=200mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
0.37
0.61
0.65
7.0
5.0
0.42
0.80
1.0
UNITS
nA
μA
V
V
V
V
V
pF
ns
CT
trr
♦
Enhanced specification
♦♦
Additional Enhanced specification
R3 (27-January 2010)
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